4.Define mean free-time? Is there any difference between mean-free time of an electron and a hole...
4.Define mean free-time? Is there any difference between mean-free time of an electron and a hole in Si?
5. What is mean free-path? What is the net displacement of an electron in one second due to thermal energy in Si?
6. What is the minority lifetime?
Homework Answers
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4.Define mean free-time? Is there any difference between
mean-free time of an electron and a hole...
The electron drift speed is 2.5×10−4 m/s in a metal with a mean free time between...
The electron drift speed is 2.5×10−4 m/s in a metal with a mean free time between collisions of 4.2×10−14 s . What is the electric field strength?
5. (4 pts) Discuss the relationship between Wmax and the magnitude and sign of the free...
5. (4 pts) Discuss the relationship between Wmax and the magnitude and sign of the free energy change for a reaction. In other words, what is the meaning of Wmax when the free energy change is negative, and when it is positive. Answer the following questions. a. Define oxidation and reduction in terms of both change in oxidation number (oxidation state) and 6. electron loss or gain. (2pts) Explain the difference between a galvanic cell and an electrolytic cell. (4...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
question 3 1. A photoconductor is made of n-type silicon with conductivity of 3 Scm1 and...
question 3
1. A photoconductor is made of n-type silicon with conductivity of 3 Scm1 and recombination lifetime of 50 μs, when illuminated with light, the conductivity of the photoconductor increases to 5 Scm1. Find the electron-hole pairs recombination rate during illumination. r the photoconductor described above, find energy difference between quasi-Fermi levels before illumination and during illumination. 2. Fo 3. For the photoconductor described above, estimate mean free time, mean free path and the magnitude of the applied electric...
What is difference between enthalpy, entropy, and Gibbs free energy? 1.What is difference between enthalpy, entropy,...
What is difference between enthalpy, entropy, and Gibbs free energy? 1.What is difference between enthalpy, entropy, and Gibbs free energy? 2.For each of the above, what does it mean if the sign is negative? Positive? 3.Provide any equation (from Ch1-2) what includes enthalpy, entropy, or Gibbs free energy
Fermi Energy Eqn. 4.22 in Kasap gives the Fermi energy (at 0 K) as is the conduction electron con...
Fermi Energy Eqn. 4.22 in Kasap gives the Fermi energy (at 0 K) as is the conduction electron concentration. This is equivalent to the equation we derived in class. Kasap Eqn. 4.23 gives the Fermi energy as a function of temperature: EFEF1 a. If each copper atom contributes one conduction electron, what is the Fermi energy of copper at 29:3 b. Since this Fermi energy was derived from the Sommerfeld model, the energy is entirely kinetic 12 LEFo K? energy...
Please answer question 1a 1. (a) For what value of free energy difference between donor and...
Please answer question 1a 1. (a) For what value of free energy difference between donor and acceptor, ΔG0, is the rate of electron transfer a maximum? (5 points) (b) Write an approximate expression for the transition state barrier when ΔG0 >> λ. How does the electron transfer rate change with increasing driving free energy difference (ΔG0 a larger negative number) for the electron transfer in this limit? (5 points)
4) Gallium arsenide (GaAs) is a semiconductor material of great interest for its high power-handling capabilities...
4) Gallium arsenide (GaAs) is a semiconductor material of great interest for its high power-handling capabilities and fast response time. (a) Calculate the drift speed of electrons in GaAs for a field of 10 V/cm if the electron mobility is un = 8500 cm2/Vs. (b) What percent of the electron's thermal speed at 300 K is this drift speed? (c) Assuming an effective electron mass equal to the free electron mass, calculate the average time between electron collisions. (d) Calculate...
The mean time between collisions in iron is 4.6x10-15 s. Part A What electron current is...
The mean time between collisions in iron is 4.6x10-15 s. Part A What electron current is driven through a 1.4-mm-diameter iron wire by a 0.065 V/m electric field? Express your answer as a number of electrons per second. ► View Available Hint(s) ΑΣΦ ? electron/s Submit
please answer these questions 1. What is the difference between a refrigerator and a heat pump?...
please answer these questions 1. What is the difference between a refrigerator and a heat pump? 2. A heat pump and a refrigerator are operating between the same two thermal reservoirs. Which one has a higher COP? 3. Define the COP of a heat pump. 4. Thermal efficiency of a heat engine is defined to be the ratio of energy output desirable to energy input. Would you think that efficiency is an appropriate definition to be used when a heat...
5. (4 pts) Discuss the relationship between Wmax and the magnitude and sign of the free energy change for a reaction. In other words, what is the meaning of Wmax when the free energy change is negative, and when it is positive. Answer the following questions. a. Define oxidation and reduction in terms of both change in oxidation number (oxidation state) and 6. electron loss or gain. (2pts) Explain the difference between a galvanic cell and an electrolytic cell. (4...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
question 3
1. A photoconductor is made of n-type silicon with conductivity of 3 Scm1 and recombination lifetime of 50 μs, when illuminated with light, the conductivity of the photoconductor increases to 5 Scm1. Find the electron-hole pairs recombination rate during illumination. r the photoconductor described above, find energy difference between quasi-Fermi levels before illumination and during illumination. 2. Fo 3. For the photoconductor described above, estimate mean free time, mean free path and the magnitude of the applied electric...
Fermi Energy Eqn. 4.22 in Kasap gives the Fermi energy (at 0 K) as is the conduction electron concentration. This is equivalent to the equation we derived in class. Kasap Eqn. 4.23 gives the Fermi energy as a function of temperature: EFEF1 a. If each copper atom contributes one conduction electron, what is the Fermi energy of copper at 29:3 b. Since this Fermi energy was derived from the Sommerfeld model, the energy is entirely kinetic 12 LEFo K? energy...
4) Gallium arsenide (GaAs) is a semiconductor material of great interest for its high power-handling capabilities and fast response time. (a) Calculate the drift speed of electrons in GaAs for a field of 10 V/cm if the electron mobility is un = 8500 cm2/Vs. (b) What percent of the electron's thermal speed at 300 K is this drift speed? (c) Assuming an effective electron mass equal to the free electron mass, calculate the average time between electron collisions. (d) Calculate...
The mean time between collisions in iron is 4.6x10-15 s. Part A What electron current is driven through a 1.4-mm-diameter iron wire by a 0.065 V/m electric field? Express your answer as a number of electrons per second. ► View Available Hint(s) ΑΣΦ ? electron/s Submit
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