ZuoTi.Pro
Question

Consider an abrupt p-n junction. Calculate and plot the charge distribution on the vacinity of the...

Consider an abrupt p-n junction. Calculate and plot the charge distribution on the vacinity of the junction, electric firld distribution and voltage across the junction.

Given: Na = 10^19 and Nd = 10^18

engineering   Electrical-Engineering   
0 0
Add a comment Improve this question Transcribed image text
Next > < Previous
Sort answers by oldest

Homework Answers

Answer #1

aiven tha dola Na lo No- 1o18 a-lo Na Nodeple tion Region coith Mose in Nsida COND x to 18 NNANo 1014, 01

0 0
Add a comment
Know the answer?
Add Answer to:
Consider an abrupt p-n junction. Calculate and plot the charge distribution on the vacinity of the...
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Log In

Sign Up

Not the answer you're looking for? Ask your own homework help question. Our experts will answer your question WITHIN MINUTES for Free.
Similar Homework Help Questions

  • The ratio of hole to electron current for 0.65 V applied bias in a long-base, abrupt p-n junction...

    the ratio of hole to electron current for 0.65 V applied bias in a long-base, abrupt p-n junction de made from silicon having Na-100cm" and Nd-5x10"cm". The carrier lifetimes are 2 μ Sketch the magnitude of the electric field across the junction. [4 pts.] the ratio of hole to electron current for 0.65 V applied bias in a long-base, abrupt p-n junction de made from silicon having Na-100cm" and Nd-5x10"cm". The carrier lifetimes are 2 μ Sketch the magnitude of...

  • 2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the rev...

    2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi 2. Suppose you have a silicon wafer...

  • Consider an abrupt p-n junction consisted of a p-side silicon doped with 1.0E+15 cm-3 acceptors and...

    Consider an abrupt p-n junction consisted of a p-side silicon doped with 1.0E+15 cm-3 acceptors and an n- side silicon doped with 1.0E+15 cm-3 donors at room temperature (no donors in p-side and no acceptors in n-side). a. Calculate the Fermi levels on each side of the junction with respect to Ei. Use the Special Conditions to find the concentrations. b. Calculate the contact potential. c .Calculate the ratio, Xpo/Xno

  • 1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in...

    1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...

  • An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of...

    An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of 1016 cm−3 , donors on the N-side at a concentration of 1017 cm−3 and operated at 300 K. The hole recombination time on the N-side 0.2 µs and the electron recombination time on the P-side is 2 µs. The cross sectional area is 10-2 cm2 a) Calculate the reverse saturation current. b) Calculate the contact potential. e) Calculate the bias voltage needed to obtain...

  • 1o points: Conside r an abrupt Si pn junction that has 10 acceptors em3 on the p-side donors on t...

    asap. please 1o points: Conside r an abrupt Si pn junction that has 10 acceptors em3 on the p-side donors on the n-side. The minority carier recombination times are fe-490 ns for and 109 electrons in the 1350 cm Vs, and with Nd-10 cm and A,s 65 cm ,The cross-sectional area is 1.5 mm. Assume this is a long diode, please calculate the current, I, hrough the diode at room temperature when the voltage, V, acoss it is 0.25 2.5...

  • A p-i-n junction has an intrinsic region thickness of 1-um (micrometer) The p side has Na...

    A p-i-n junction has an intrinsic region thickness of 1-um (micrometer) The p side has Na =10^15 and the n side has Nd=10^19. a) Derive the electric field and potential using Poisson's equation. b) Calculate the depletion region width (take into account the 1-um and the depletion region width for a regular pn junction)

  • Consider an abrupt p-n junction formed by two steps; an entire silicon sample was first doped...

    Consider an abrupt p-n junction formed by two steps; an entire silicon sample was first doped with 1.0E+15 cm-3 acceptors (step I), and then a half of the sample was doped with 2.0E+15 cm-3 donors at room temperature (step II). a. Calculate the Fermi levels on each side of the junction with respect to Ei. Use the Special Conditions to find the concentrations. b. Calculate the contact potential. c. Calculate the ratio , Xpo/Xno

  • The depletion width in an abrupt p-n junction is 0.45 μ m at thermal equilibrium. What...

    The depletion width in an abrupt p-n junction is 0.45 μ m at thermal equilibrium. What is the new depletion width under a reverse bias voltage of 2 V? The built-in voltage is 0.35V.

  • Please answer all your works correctly. Thanks. Q3) A germanium p-n junction diode is created with...

    Please answer all your works correctly. Thanks. Q3) A germanium p-n junction diode is created with NA 1016cm3 in p-side and ND 1017cm-3 in the n-side. The intrinsic carrier concentration of Ge at the room temperature is 2 x 1013cm-3. Calculate the built in potential, electric field and potential distribution in the space charge region, and width of the space charge region? (Dielectric coefficient of german iurm is 16, є0-8.85 x 10-14 F/cm). WI

ADVERTISEMENT
Free Homework Help App
Download From Google Play
Scan Your Homework
to Get Instant Free Answers
Need Online Homework Help?
Ask a Question
Get Answers For Free
Most questions answered within 3 hours.
ADVERTISEMENT
ADVERTISEMENT
ADVERTISEMENT