Consider a pn junction that is forward biased. Determine the value of the external biasing voltage...
Consider a pn junction that is forward biased. Determine the value of the external biasing voltage of the pn-junction such that the width of the pn-junction is zero.
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Consider a pn junction that is forward biased. Determine the
value of the external biasing voltage...
3) Consider a reverse biased PN junction. Let the applied bias change from Vj to Vp...
3) Consider a reverse biased PN junction. Let the applied bias change from Vj to Vp + SV. Where is the charge 8Q added in response to SV? What is the formula for this voltage tunable capacitance in terms of the PN junction parameters (doping, built-in voltage, applied voltage etc)? Discuss one application of this voltage tunable capacitor.
d emier junction is forward biased and emitter-collector junction is reversed biased t. In cut oft...
d emier junction is forward biased and emitter-collector junction is reversed biased t. In cut oft mode junction is forward biased and emitter-collector junction is forward biased junction is reversed biased and emitter-collector junction is reversed biased junction is reversed biased and emitter-collector junction is forward biased is c) The base-emitter ) The to operate in active mode Collector-Base junction must be 7 For the BJT a) Heavily doped b) Must reversed bias c) Must be forward bias d) Lightly...
Problem 2: pn Junction – Transient Response
The hole concentration on the n-side of an ideal pn step-junction Si diode at a given instant of time is as shown:a) Is the junction forward or reverse biased? Explain briefly.b) If pn0 = 103 and T = 300K, determine the applied bias, vA.c) Is there a forward or reverse current flowing through the diode? Explain briefly.
1. Draw the current-voltage characteristic of a Zener diode and show the forward and reverse biasing...
1. Draw the current-voltage characteristic of a Zener diode and show the forward and reverse biasing areas. Mark the "Zener voltage" value on the graph. Explain how the voltage on the Zener diode will vary when it is biased with a voltage higher than the Zener voltage. 2. Explain the operating principle of a full-wave bridge rectifier by clarifying which diodes becomes active during the positive and negative cycles of the input signal.
please answer 7.17, i put 7.10 for reference. Consider a uniformly doped silicon pn junction with...
please answer 7.17, i put 7.10 for reference.
Consider a uniformly doped silicon pn junction with doping concentrations N 2 x 7.10 = 1017 cm3and N = 4 X 1016 cm3. (a) Determine Vhi at T = 300 K. (b) Determine the temperature at which Vhi increases by 2 percent. (Trial and error may have to be used.) 7.17 Consider the pn junction described in Problem 7.10 for T = 300 K. The cross- sectional area of the junction is...
The correct answer is: 5769 If the DC bias voltage, Vd, across a reverse biased PN...
The correct answer is: 5769 If the DC bias voltage, Vd, across a reverse biased PN step junction is equal to -2.9V then what is the capacitance of this junction in femto Farads? Assume that CjO for the junction is equal to 992.3 fF. (Note that 1 fF 1 femto Farad 1 x 10A-15 F.) Also assume that the built-in voltage for this junction is equal to 777mV. Answer The correct answer is: 456.1
8.3 Consider a conventional NPN BJT with uniform doping. The base-emitter junction is forward biased, and...
8.3 Consider a conventional NPN BJT with uniform doping. The base-emitter junction is forward biased, and the base-collector junction is reverse biased. (a) Qualitatively sketch the energy band diagram. (b) Sketch the minority carrier concentrations in the base, emitter, and collector regions. (c) List all the causes contributing to the base and collector currents. You may neglect thermal recombination-generation currents in the depletion regions.
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minor...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on t...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
3) Consider a reverse biased PN junction. Let the applied bias change from Vj to Vp + SV. Where is the charge 8Q added in response to SV? What is the formula for this voltage tunable capacitance in terms of the PN junction parameters (doping, built-in voltage, applied voltage etc)? Discuss one application of this voltage tunable capacitor.
d emier junction is forward biased and emitter-collector junction is reversed biased t. In cut oft mode junction is forward biased and emitter-collector junction is forward biased junction is reversed biased and emitter-collector junction is reversed biased junction is reversed biased and emitter-collector junction is forward biased is c) The base-emitter ) The to operate in active mode Collector-Base junction must be 7 For the BJT a) Heavily doped b) Must reversed bias c) Must be forward bias d) Lightly...
1. Draw the current-voltage characteristic of a Zener diode and show the forward and reverse biasing areas. Mark the "Zener voltage" value on the graph. Explain how the voltage on the Zener diode will vary when it is biased with a voltage higher than the Zener voltage. 2. Explain the operating principle of a full-wave bridge rectifier by clarifying which diodes becomes active during the positive and negative cycles of the input signal.
please answer 7.17, i put 7.10 for reference.
Consider a uniformly doped silicon pn junction with doping concentrations N 2 x 7.10 = 1017 cm3and N = 4 X 1016 cm3. (a) Determine Vhi at T = 300 K. (b) Determine the temperature at which Vhi increases by 2 percent. (Trial and error may have to be used.) 7.17 Consider the pn junction described in Problem 7.10 for T = 300 K. The cross- sectional area of the junction is...
The correct answer is: 5769 If the DC bias voltage, Vd, across a reverse biased PN step junction is equal to -2.9V then what is the capacitance of this junction in femto Farads? Assume that CjO for the junction is equal to 992.3 fF. (Note that 1 fF 1 femto Farad 1 x 10A-15 F.) Also assume that the built-in voltage for this junction is equal to 777mV. Answer The correct answer is: 456.1
8.3 Consider a conventional NPN BJT with uniform doping. The base-emitter junction is forward biased, and the base-collector junction is reverse biased. (a) Qualitatively sketch the energy band diagram. (b) Sketch the minority carrier concentrations in the base, emitter, and collector regions. (c) List all the causes contributing to the base and collector currents. You may neglect thermal recombination-generation currents in the depletion regions.
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
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