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Determine the increment in the built-in potential of a silicon in the (Hint: find Yel using...
Design a silicon pn junction by finding the ratio of the impurity
Design a silicon pn junction by finding the ratio of the
impurity
n junction by finding the ratio of the impurity concentrations Na e p-n junction to be designed is assumed to have ideal current-voltage (12 pts) N D Design a silic such that 95 percent elect 2. A. cent of the total current in the depletion region is contributed by rons. Th In addition, it has the following parameter values τ,-τ,-0.1 x 10-6 s, D,-10 cm2/s and D,-25 cm2/s...
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the rev...
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi
2. Suppose you have a silicon wafer...
(iv) [2 Marks] A pn-junction has a built-in potential voltage of 1V across the junction. The width of the depletion reg...
(iv) [2 Marks] A pn-junction has a built-in potential voltage of 1V across the junction. The width of the depletion region is 1um. The acceptor doping is NA 2 x 1015cm-3 in the P-side and a donor doping is Np = 8 x 1015cm-3 on the N-side. If the reference position x 0 is the edge of the depletion region on the P-side and the P region is on the left of the N region then where does the maximum...
= 8.05 - 1022 - 1.21 . 1023 VD (Linear Fit) 1/C? (1/F?) 0.0 0.5 100.0...
= 8.05 - 1022 - 1.21 . 1023 VD (Linear Fit) 1/C? (1/F?) 0.0 0.5 100.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 Voltage (V) Figure 1: CV data for a Silicon p-n junction diode. 2. A colleague hands you CV data (capacitance vs voltage) of a silicon p-n junction diode shown in Figure 1. For this particular diode, the donor concentration on the n-side is much larger than the acceptor concentration on the p-side (i.e. Np > NA) and...
Your supervisor tasked you to design a square cross-section silicon p-n junction diode with the following...
Your supervisor tasked you to design a square cross-section silicon p-n junction diode with the following specifications: 1. Intrinsic concentration at 300K: n. = 1.5x 10"/cmº. 2. p-side doping: N = 101/cm. 2. n-side doping: No = 1021/cm. 3. QNR length: W, =W, = 1 um. (a) Determine the sidelength so that the turn-on voltage of the designed diode to be 0.7V if the current rating of the diode is to be specified as 1 mA at room temperature. [Hint:...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with elec...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
2. (60 pts) Consider a one-sided silicon PN diode. The p-side is degenerately doped (and you...
2. (60 pts) Consider a one-sided silicon PN diode. The p-side is degenerately doped (and you can assume Ep = Ey for simplicity). The doping concentration on the n-side is Np for 0<x <too. The depletion width on the n-side is xn. Use the depletion approximation. p* ND x 0 From here, you assume that Np is given by 4x1015 cm. (h) (7 pts) What is the maximum electric field in depletion region when Va=-3 V? (i) (8 pts) As...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
please answer 7.17, i put 7.10 for reference. Consider a uniformly doped silicon pn junction with...
please answer 7.17, i put 7.10 for reference.
Consider a uniformly doped silicon pn junction with doping concentrations N 2 x 7.10 = 1017 cm3and N = 4 X 1016 cm3. (a) Determine Vhi at T = 300 K. (b) Determine the temperature at which Vhi increases by 2 percent. (Trial and error may have to be used.) 7.17 Consider the pn junction described in Problem 7.10 for T = 300 K. The cross- sectional area of the junction is...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
Design a silicon pn junction by finding the ratio of the
impurity
n junction by finding the ratio of the impurity concentrations Na e p-n junction to be designed is assumed to have ideal current-voltage (12 pts) N D Design a silic such that 95 percent elect 2. A. cent of the total current in the depletion region is contributed by rons. Th In addition, it has the following parameter values τ,-τ,-0.1 x 10-6 s, D,-10 cm2/s and D,-25 cm2/s...
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi
2. Suppose you have a silicon wafer...
(iv) [2 Marks] A pn-junction has a built-in potential voltage of 1V across the junction. The width of the depletion region is 1um. The acceptor doping is NA 2 x 1015cm-3 in the P-side and a donor doping is Np = 8 x 1015cm-3 on the N-side. If the reference position x 0 is the edge of the depletion region on the P-side and the P region is on the left of the N region then where does the maximum...
= 8.05 - 1022 - 1.21 . 1023 VD (Linear Fit) 1/C? (1/F?) 0.0 0.5 100.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 Voltage (V) Figure 1: CV data for a Silicon p-n junction diode. 2. A colleague hands you CV data (capacitance vs voltage) of a silicon p-n junction diode shown in Figure 1. For this particular diode, the donor concentration on the n-side is much larger than the acceptor concentration on the p-side (i.e. Np > NA) and...
Your supervisor tasked you to design a square cross-section silicon p-n junction diode with the following specifications: 1. Intrinsic concentration at 300K: n. = 1.5x 10"/cmº. 2. p-side doping: N = 101/cm. 2. n-side doping: No = 1021/cm. 3. QNR length: W, =W, = 1 um. (a) Determine the sidelength so that the turn-on voltage of the designed diode to be 0.7V if the current rating of the diode is to be specified as 1 mA at room temperature. [Hint:...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
2. (60 pts) Consider a one-sided silicon PN diode. The p-side is degenerately doped (and you can assume Ep = Ey for simplicity). The doping concentration on the n-side is Np for 0<x <too. The depletion width on the n-side is xn. Use the depletion approximation. p* ND x 0 From here, you assume that Np is given by 4x1015 cm. (h) (7 pts) What is the maximum electric field in depletion region when Va=-3 V? (i) (8 pts) As...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
please answer 7.17, i put 7.10 for reference.
Consider a uniformly doped silicon pn junction with doping concentrations N 2 x 7.10 = 1017 cm3and N = 4 X 1016 cm3. (a) Determine Vhi at T = 300 K. (b) Determine the temperature at which Vhi increases by 2 percent. (Trial and error may have to be used.) 7.17 Consider the pn junction described in Problem 7.10 for T = 300 K. The cross- sectional area of the junction is...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
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