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7. An FET with an aspect ratio of (W/L) =10 gives a maximum current of...
Q2: Consider an NMOS FET having W = 160um, L = 2um, Kn' = 50uA/V2, VIN=...
Q2: Consider an NMOS FET having W = 160um, L = 2um, Kn' = 50uA/V2, VIN= 2V and 2=0. Find out the regions of operation (cut-off, triode, saturation) and the drain current id for the following conditions: a) VGS = 1 V and Vds = 3V b) VGS = 3V and vps = 0.5V c) VGS = 3V and Vds = 5V
Problem 10: Consider the differential stage biased by current mirror and loaded with capacitor. MOSFET parametes: Vr-1 V; VA-; (W/L)*kn-2 mA/V; negligible internal capacitances. 5V 8k 10k 5n Vout...
Problem 10: Consider the differential stage biased by current mirror and loaded with capacitor. MOSFET parametes: Vr-1 V; VA-; (W/L)*kn-2 mA/V; negligible internal capacitances. 5V 8k 10k 5n Vout 5V Find 1. 2. 3. DC voltage at the output; Low frequency small signal voltage gain Vout/Vin; High frequency 3 dB cutoff.
Problem 10: Consider the differential stage biased by current mirror and loaded with capacitor. MOSFET parametes: Vr-1 V; VA-; (W/L)*kn-2 mA/V; negligible internal capacitances. 5V 8k 10k 5n Vout...
I need help with questions 1-6 please. Thank you 1. Explain the CMOS process flow using...
I need help with questions 1-6 please. Thank you
1. Explain the CMOS process flow using a schematic diagram with due explanations to the following aspects 10 Points (a) Well and Channel formation (b) Isolation (c) Gate Oxide Formation (d) Gate and Source/Drain Formations (e) Contacts and Metallization 2. Consider a chip that has dimensions of 5000 um x 4000 um. 4 Points (a) Estimate the fabrication yield 'Y' assuming a defect density of D=0.5 cm? (b) What would be...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same rel...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
A Mosheer with L=lum Co = 3.72 × 10-7 F/cm, ni = 1.5 × 1010cm-3 and...
A Mosheer with L=lum Co = 3.72 × 10-7 F/cm, ni = 1.5 × 1010cm-3 and VT = 1 Vis operating in the saturation region at VGt=5V. Using-0.0259 Van A. compute the value for the drain saturation voltage, VD,sat B. compute the value for the drain saturation current, /p sat in milliamps (mA); C. compute the value for the channel conductance, gDi D. compute the value for the transconductance, gm μ,-500 cm2/V-s 5 × 1016 cm-3 , Na 怎= 10pm...
Consider the following current mirror combination, where all transistors have the same kn'(W/L) =...
Consider the following current mirror
combination, where all transistors have the same
kn'(W/L) =
kp'(W/L) =
2mA/V2, and VTN =
1V, VTP = -1V. It is also given that VDD1 =
10V, VDD2 = 8V. Remember that for saturation the drain
current is given by ID = ½
kn'(W/L)
(VGS –
VTN)2 for NMOS and
ID = ½
kp'(W/L)
(VGS –
VTP)2 for PMOS. You can
ignore the channel modulation for all transistors.
Find the value of R so that...
An NMOS transistor with parameters VTh=1 V, k’=100 uA/V2 , W = 10 um, and L=1...
An NMOS transistor with parameters VTh=1 V, k’=100 uA/V2 , W = 10 um, and L=1 um has a VGS=2 V. Find the drain current when: a. VDS=0.5 V b. VDS=2 V c. VDS=3 V Answers: a) 374 uA b) 0.5 mA c) 0.5 mA please show your work :)
1. Consider the following current mirror combination, where all transistors have the same kn'(W/L...
1. Consider the following current mirror combination, where all transistors have the same kn'(W/L) = kp'(W/L) = 2mA/V2, and VTN-1У, VTP--1V. It is also given that VDD1-10V, VDD2-8V. Remember that for saturation the drain current is given by IDー½ k,"(W/L) (VGS-Yn)" for NMOS and ID ½ kp"(WL) (VGS-V,»)2 for PMOS. You can ignore the channel modulation for all transistors. (a) Find the value of R so that I.-1mA. (b) Are transistors Q1, Q2, Q3 in saturation? (c) What is the...
4) Consider the MOSFET differential amplifier shown below, with Io-2 mA, and RL- 10 kS2, Rss-100 ...
4) Consider the MOSFET differential amplifier shown below, with Io-2 mA, and RL- 10 kS2, Rss-100 k2, VDD- +8V and Vss--8V. The NMOS transistors in the circuit are nominally identical, with kn 2 mA/V2, VTn 1.0 V and ro 100 k2. The PMoS transistors in the circuit are nominally identical, with kp 2 mA/V2, [VTpl 1.0 V and ro 100 kΩ M3 M4 0 M1 M2 a) First consider the DC bias point. Assuming that the current mirror requires at...
3. Consider the following circuit. Q1 is identical to Q2 and p- 100. Q3 is identical...
3. Consider the following circuit. Q1 is identical to Q2 and p- 100. Q3 is identical to Q4 and B Assume VBE.on-0.7V, VT-25mV. oofor Q1 and Q3, and r, 400 k2 for Q3 and Q4. Vid Vil -Va for differential mode operation, Vicm Vil vi2 for common mode operation, Vo Vo2-Vol for differentially taken output (a) Design Ra to have the bias current lcs 2 mA. (b) Find the differential mode voltage gain for differentially taken output (As Vo/ Via)...
Q2: Consider an NMOS FET having W = 160um, L = 2um, Kn' = 50uA/V2, VIN= 2V and 2=0. Find out the regions of operation (cut-off, triode, saturation) and the drain current id for the following conditions: a) VGS = 1 V and Vds = 3V b) VGS = 3V and vps = 0.5V c) VGS = 3V and Vds = 5V
Problem 10: Consider the differential stage biased by current mirror and loaded with capacitor. MOSFET parametes: Vr-1 V; VA-; (W/L)*kn-2 mA/V; negligible internal capacitances. 5V 8k 10k 5n Vout 5V Find 1. 2. 3. DC voltage at the output; Low frequency small signal voltage gain Vout/Vin; High frequency 3 dB cutoff.
Problem 10: Consider the differential stage biased by current mirror and loaded with capacitor. MOSFET parametes: Vr-1 V; VA-; (W/L)*kn-2 mA/V; negligible internal capacitances. 5V 8k 10k 5n Vout...
I need help with questions 1-6 please. Thank you
1. Explain the CMOS process flow using a schematic diagram with due explanations to the following aspects 10 Points (a) Well and Channel formation (b) Isolation (c) Gate Oxide Formation (d) Gate and Source/Drain Formations (e) Contacts and Metallization 2. Consider a chip that has dimensions of 5000 um x 4000 um. 4 Points (a) Estimate the fabrication yield 'Y' assuming a defect density of D=0.5 cm? (b) What would be...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
A Mosheer with L=lum Co = 3.72 × 10-7 F/cm, ni = 1.5 × 1010cm-3 and VT = 1 Vis operating in the saturation region at VGt=5V. Using-0.0259 Van A. compute the value for the drain saturation voltage, VD,sat B. compute the value for the drain saturation current, /p sat in milliamps (mA); C. compute the value for the channel conductance, gDi D. compute the value for the transconductance, gm μ,-500 cm2/V-s 5 × 1016 cm-3 , Na 怎= 10pm...
Consider the following current mirror
combination, where all transistors have the same
kn'(W/L) =
kp'(W/L) =
2mA/V2, and VTN =
1V, VTP = -1V. It is also given that VDD1 =
10V, VDD2 = 8V. Remember that for saturation the drain
current is given by ID = ½
kn'(W/L)
(VGS –
VTN)2 for NMOS and
ID = ½
kp'(W/L)
(VGS –
VTP)2 for PMOS. You can
ignore the channel modulation for all transistors.
Find the value of R so that...
1. Consider the following current mirror combination, where all transistors have the same kn'(W/L) = kp'(W/L) = 2mA/V2, and VTN-1У, VTP--1V. It is also given that VDD1-10V, VDD2-8V. Remember that for saturation the drain current is given by IDー½ k,"(W/L) (VGS-Yn)" for NMOS and ID ½ kp"(WL) (VGS-V,»)2 for PMOS. You can ignore the channel modulation for all transistors. (a) Find the value of R so that I.-1mA. (b) Are transistors Q1, Q2, Q3 in saturation? (c) What is the...
4) Consider the MOSFET differential amplifier shown below, with Io-2 mA, and RL- 10 kS2, Rss-100 k2, VDD- +8V and Vss--8V. The NMOS transistors in the circuit are nominally identical, with kn 2 mA/V2, VTn 1.0 V and ro 100 k2. The PMoS transistors in the circuit are nominally identical, with kp 2 mA/V2, [VTpl 1.0 V and ro 100 kΩ M3 M4 0 M1 M2 a) First consider the DC bias point. Assuming that the current mirror requires at...
3. Consider the following circuit. Q1 is identical to Q2 and p- 100. Q3 is identical to Q4 and B Assume VBE.on-0.7V, VT-25mV. oofor Q1 and Q3, and r, 400 k2 for Q3 and Q4. Vid Vil -Va for differential mode operation, Vicm Vil vi2 for common mode operation, Vo Vo2-Vol for differentially taken output (a) Design Ra to have the bias current lcs 2 mA. (b) Find the differential mode voltage gain for differentially taken output (As Vo/ Via)...
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