Please show clear work and separate each question. other answers on here are a joke to try and follow.
please
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Please show clear work and separate each question. other answers on here are a joke to...
Please only use PSpice as stated in the directions. Any other
software will not be accepted. Thanks
No multisim or LTSpice.
Part I: Transistor Output Characteristic Procedure: 1. Build the circuit model in PSpice as shown in Fig. 1 with Vbb = 10V, R2 = 330 k92 and R3 = 0.22 k22. R3 0.22 Vec vbь R2 Q1 10V 330k or 147k Figure 1. Circuit configuration for Transistor output characteristic testing 2. Use Ohm's Law to calculate Ib. You may...
Electronics-common emmitter amplifier. Pls be try to be
helpful
Im trying to study here in this book example..
However im kinda lost and i cant follow the correct answers
they got.. could someone pls help me..
I just wanna learn this, i hope u can help me learn by showin
clear and corect solutions on how to properly got the
answer..
Also especially on finding the values on the laod line
analysis, im lost.
Pls help
Any helpful help would...
Hi, I need the full worked solution for ALL
PARTS of this question please. Final answers to the first
3 parts are given on the right. Neat handwriting is greatly
appreciated. Thank you! :)
Question 3 (a) Answers: Recall the DC load analysis of an E-MOSFET circuit and determine the following parameters for the circuit given in Figure Q3(a). Assume this particular MOSFET has minimum values of ID(on) = 200 mA at Vos = 4V and VGS(th) = 2V. Vpp=24V...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
1-Clear handwriting
2-Correct answer
3-Organized
4-answer all the questions
Please
Problem 2 On the circuit on Figure P2, transi stor Q1 has a threshold voltage of Vt = 2 V and a transconductance parameter of k = 100 mA/V2. Note that Vcc = -Vee = 4.5 V. Moreover, capacitors C1, C2, and C3 can be assumed to be very large VDD 4.5.0 R3 25kQ R1 300kn C2 Vout C1 Rsig Q1 1k0 R2 200kn Vsig (R4 2kQ C3 -4.5V VSS...
please choose one of the answer choices above.
Must show all work, thank you
Question 3 CIRCUIT B1 (2.5 Marks) + Vcc Rc IRC > IC RB Ів + VCE IE FIG. 3: CIRCUIT B1 Statement: Sketching relevant output (Vc-Ic) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.3 (denoting the type Circuit B1). Assume the following: Vcc= 20 volt; Rc = 2.5 k; RB = 350 k...
Having trouble with this circuit, please show all your
work step by step, thank you.
Question 2: Given the following circuit below: + V Cc BI Cp Sig Cg ei sig RB (a) Draw the dc model of the circuit and solve for VBB if Vc = 5V and complete the table at the end of the assignment (10 points) (b) Draw the ac small signal model of the circuit and solve for the closed loop gain Gv Vo/ Vsig...
please choose one of the answer choices above.
Must show all work, thank you
Question 7 CIRCUIT D1 (2.5 Marks) Statement: Sketching relevant output (Vc-Ic) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig. 7 (denoting the type Circuit C2). Assume the following: Vcc= 18 volt; VBE = 0.7; Rc = 1.5 k; RB2 = 33 k; Vc = 9.5 volt; Irc = 9.5 and, B = 100...
Show all steps please (I have the answers I need the
steps
Question 1: 20% Given that a silicon PN junction diode (D1) has forward current of 1.5 mA at forward voltage of 0.7V, thermal voltage V-26mV at room temperature. Assuming diode forward and reverse characteristic is given by: Forward equation: izle , Reverse cquation: i=-1 (a) Find reverse saturation current Is parameter. (3%) i= Isere =1.5m = Is e 2026 Is = 3.04x107S A (f) A 0.? (a) Find...