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3. Following device characteristics are given to you from measurement in the lab Measurement VGS VDS...
You will be given the IBM 0.13um PMOS and NMOS model files. 1) From the model...
You will be given the IBM 0.13um PMOS and NMOS model files. 1) From the model files, find out K' for both NMOS and PMOS. 2) For W/L=10um/0.13um, plot the drain current of an NMOS as a function of Vps when Vos varies from 0 to 1.5V, assuming Vos= 0.3V.0.6V, 0.9V, 1.2V, and 1.5V, and Ves=0. 3) Estimate of this transistor (Assume De=0.3 V). 4) Repeat 2) but with Vse=0.3V. 5) Estimate y (body effect) of this transistor. 6) Calculate...
In the following PMOS transistor, assume that , and . Find the current and state whether...
In the following PMOS transistor, assume that
,
and
. Find the current
and state whether it is in the saturated, triode, or cut-off
region for the values of
and
. Assume that
if it is in the saturation region, and
if it is in the triode region.
VTH = -0.51 β = 800μ A/V 0 Ip Rp 60kΩ Rp 120kΩ ID (VGS VTH) 2 Ip = B((VGS – VTHVps DS 10V / 90k) W Ro WHE -10V
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region o...
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) v,= 10V SATE e) Write the formula to calculate Current (ID) for the circuit in Figure 1 Fig. 1 Question 3: a) Find the value of Vgs* b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) c)...
Lecture Summary We discussed MOSFET biasing and different regions of operations. We further discussed IV character...
Lecture Summary We discussed MOSFET biasing and different regions of operations. We further discussed IV characteristicss of ideal and non-ideal MOSFETS. Channel length modulation and effect of channel length modulation on current ID was also discussed during the lectures. Quentinductor and PN junction is also introduced in the lectures. Draw IV characteristics of an ideal diode. b Draw IV characteristics of a non-ideal diode with Vt 0.4V e Draw IV characteristics of an ideal MOSFET al d) Draw IV characteristics...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same rel...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig...
Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig. 4 Question 4: W a Find the value of Vas b If the threshold voltage of the NMOS = 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) e Write the formula to calculate Current (ID) for the circuit in Figure 3. Fig. 3 Question 5: V=5V ww a...
Post lab 1. From the experimental data in tables 1 and 2, obtain the following; a....
Post lab 1. From the experimental data in tables 1 and 2, obtain the following; a. Input characteristics - plots of VBE (x-axis) vs Ib (y-axis) with constant values VCE b. Output characteristics - plots of VCE (x-axis) vs Ic (y- axis) with constant values of Ib. c. Dynamic input resistance and output resistance 2. DC current gain () of the transistor and compare this value with that of the value given in the datasheet. 3. What are the uses...
Referring to the following data sheets calculate the switching loss for the IGBT: Given, E =...
Referring to the following data sheets calculate the
switching loss for the IGBT:
Given, E = 400V, ID= 56A, Fs = 18.5kHz, VDS= 300V, VGS= +/- 18V,
RG = 22ohm.
Turn-on and Turn-off Energy: IGBT Eon E (mWs) Eoff 20 40 80 100 120 60 Ic (A) SKM50GB063D Values Unit Absolute Maximum Ratings Symbol Conditions IGBT VCES T = 25°C Ic To = 25 °C T = 150°C To = 75 °C Cnom | |сем CRM = 2xl nom 600...
You will be given the IBM 0.13um PMOS and NMOS model files. 1) From the model files, find out K' for both NMOS and PMOS. 2) For W/L=10um/0.13um, plot the drain current of an NMOS as a function of Vps when Vos varies from 0 to 1.5V, assuming Vos= 0.3V.0.6V, 0.9V, 1.2V, and 1.5V, and Ves=0. 3) Estimate of this transistor (Assume De=0.3 V). 4) Repeat 2) but with Vse=0.3V. 5) Estimate y (body effect) of this transistor. 6) Calculate...
In the following PMOS transistor, assume that
,
and
. Find the current
and state whether it is in the saturated, triode, or cut-off
region for the values of
and
. Assume that
if it is in the saturation region, and
if it is in the triode region.
VTH = -0.51 β = 800μ A/V 0 Ip Rp 60kΩ Rp 120kΩ ID (VGS VTH) 2 Ip = B((VGS – VTHVps DS 10V / 90k) W Ro WHE -10V
Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) v,= 10V SATE e) Write the formula to calculate Current (ID) for the circuit in Figure 1 Fig. 1 Question 3: a) Find the value of Vgs* b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) c)...
Lecture Summary We discussed MOSFET biasing and different regions of operations. We further discussed IV characteristicss of ideal and non-ideal MOSFETS. Channel length modulation and effect of channel length modulation on current ID was also discussed during the lectures. Quentinductor and PN junction is also introduced in the lectures. Draw IV characteristics of an ideal diode. b Draw IV characteristics of a non-ideal diode with Vt 0.4V e Draw IV characteristics of an ideal MOSFET al d) Draw IV characteristics...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig. 4 Question 4: W a Find the value of Vas b If the threshold voltage of the NMOS = 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) e Write the formula to calculate Current (ID) for the circuit in Figure 3. Fig. 3 Question 5: V=5V ww a...
Post lab 1. From the experimental data in tables 1 and 2, obtain the following; a. Input characteristics - plots of VBE (x-axis) vs Ib (y-axis) with constant values VCE b. Output characteristics - plots of VCE (x-axis) vs Ic (y- axis) with constant values of Ib. c. Dynamic input resistance and output resistance 2. DC current gain () of the transistor and compare this value with that of the value given in the datasheet. 3. What are the uses...
Referring to the following data sheets calculate the
switching loss for the IGBT:
Given, E = 400V, ID= 56A, Fs = 18.5kHz, VDS= 300V, VGS= +/- 18V,
RG = 22ohm.
Turn-on and Turn-off Energy: IGBT Eon E (mWs) Eoff 20 40 80 100 120 60 Ic (A) SKM50GB063D Values Unit Absolute Maximum Ratings Symbol Conditions IGBT VCES T = 25°C Ic To = 25 °C T = 150°C To = 75 °C Cnom | |сем CRM = 2xl nom 600...
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