What wavelength light would LED's made of gallium arsenide (GaAs) produce?
Problem 12-6. What wavelength light would LED's made of gallium arsenide (GaAs) produce? Repeat for gallium phosphide (GaP). (See Appendix 8.) Answer: 868 nm, 549 nm.
For GaAs:
Gap Energy= 1.43 eV
electron mobility= 0.85 m^2/V*s
Hole mobility= 0.040 m^2/V*s
For GaP:
gap energy=2.26 eV
electron mobility= 0.011 m^2/V*s
Hole mobility= 0.0075 m^2/V*s
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What wavelength light would LED's made of gallium arsenide (GaAs) produce?
1. (a) Calculate the value of ni for gallium arsenide (GaAs) at T = 300 K....
1. (a) Calculate the value of ni for gallium arsenide (GaAs) at T = 300 K. The constant B = 3.56 × 1014cm−3K 3/2 and the bandgap voltage Eg = 1.42 eV. [5 marks] (b) In a phosphorus-doped silicon layer with impurity concentration of 1017/cm3 , find the hole and electron concentrations at 27oC and 125oC [5 marks] 2. A young designer, aiming to develop intuition concerning conducting paths within an integrated circuit, examines the end-to-end resistance of a connecting...
1.) Determine the intrinsic carrier density in Germanium and Gallium Arsenide at 27°C The mass of...
1.) Determine the intrinsic carrier density in Germanium and Gallium Arsenide at 27°C The mass of a free electron, mo 9.11 x 10 kg . The Planck's constant, h 6.626 x 10-4J-s or 4.14 x 10s eV-s . The Boltzmann's constant, k 1.38 x 10-23 J/K or 8.617 x 10° eV/K Symbol Germanium Silicon Gallium Arsenide E, (eV)1 0.66 Bandgap energy at 300 K The effective mass of the electrons l m、! 0.55m The effective mass of the holes ma0.37mo...
Please help me out.. Need to pass this course as a removal for my other course.....
Please help me out.. Need to pass this course as a removal for
my other course..
Si material parameters: Band gap energy at 300 K: Eg = 1.124 eV Relative permittivity: x = 11.7 Effective mass of electron: m =1.08m for density of states, Effective mass of hole: m = 0.81m for density of states, m = 0.26m for conductivity m =0.39m for conductivity Up = 470 cm/V.s Mobility: Un = 1400 cm /V-s, Diffusion coefficient: Do = 36 cm²/s,...
**Please Show All The Steps** As I mentioned in the class assume that we have a...
**Please Show All The Steps**
As I mentioned in the class assume that we have a GaAs (Gallium
Arsenide) sample which was doped with excessive As to produce a
resistivity of 0.05 Ωm. Owing to the presence of an unknown
acceptor impurity the actual resistivity was 0.06Ωm, the sample
remaining n-type. What were the concentrations of donors and
acceptors present?
(Please take μe=0.85 m2/Vs and assume that all impurity atoms
are ionized)
PHYSICAL CONSTANTS Avagadro's Number NA- 6.02 x 10*23...
A light ray with wavelength lambda = 500 nm is incident on the air/diamond interfaces shown...
A light ray with wavelength lambda = 500 nm is incident on the air/diamond interfaces shown below. Calculate the angle of the reflected, and refracted, light rays R_1, R_2. theta_r = 40 degree, theta_R = 38 degree theta_r = 45 degree, theta_R = 23.7 degree theta_r = 45 degree, theta_R = 18 degree theta_r = 40 degree, theta_R = 27 degree For the light ray in problem #3, calculate the following properties: 1) wavelength in diamond, lambda_0; 2) speed of...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
1.) Determine the intrinsic carrier density in Germanium and Gallium Arsenide at 27°C The mass of a free electron, mo 9.11 x 10 kg . The Planck's constant, h 6.626 x 10-4J-s or 4.14 x 10s eV-s . The Boltzmann's constant, k 1.38 x 10-23 J/K or 8.617 x 10° eV/K Symbol Germanium Silicon Gallium Arsenide E, (eV)1 0.66 Bandgap energy at 300 K The effective mass of the electrons l m、! 0.55m The effective mass of the holes ma0.37mo...
Please help me out.. Need to pass this course as a removal for
my other course..
Si material parameters: Band gap energy at 300 K: Eg = 1.124 eV Relative permittivity: x = 11.7 Effective mass of electron: m =1.08m for density of states, Effective mass of hole: m = 0.81m for density of states, m = 0.26m for conductivity m =0.39m for conductivity Up = 470 cm/V.s Mobility: Un = 1400 cm /V-s, Diffusion coefficient: Do = 36 cm²/s,...
**Please Show All The Steps**
As I mentioned in the class assume that we have a GaAs (Gallium
Arsenide) sample which was doped with excessive As to produce a
resistivity of 0.05 Ωm. Owing to the presence of an unknown
acceptor impurity the actual resistivity was 0.06Ωm, the sample
remaining n-type. What were the concentrations of donors and
acceptors present?
(Please take μe=0.85 m2/Vs and assume that all impurity atoms
are ionized)
PHYSICAL CONSTANTS Avagadro's Number NA- 6.02 x 10*23...
A light ray with wavelength lambda = 500 nm is incident on the air/diamond interfaces shown below. Calculate the angle of the reflected, and refracted, light rays R_1, R_2. theta_r = 40 degree, theta_R = 38 degree theta_r = 45 degree, theta_R = 23.7 degree theta_r = 45 degree, theta_R = 18 degree theta_r = 40 degree, theta_R = 27 degree For the light ray in problem #3, calculate the following properties: 1) wavelength in diamond, lambda_0; 2) speed of...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
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