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3) In a silicon sample doped with 1016 cm of gallium (Ga) atoms, what faction of...
6. A silicon wafer is doped with donor atoms, N-5x0 cm(bonus question) (a) Determine (Ec-EF), (EF...
6. A silicon wafer is doped with donor atoms, N-5x0 cm(bonus question) (a) Determine (Ec-EF), (EF-Ev), (Ep-E) at 300 K. Assume all the donor atoms are ionized. (b) Plot the position of Fermi level (EF) in the bandgap as a function of temperature for 300 Ts700 K. In this temperature range, it can be assumed that all the donor atoms are ionized. (c) Plot the position of Fermi level (Er) in the bandgap as acceptor atoms are added (N.- 104,...
Find the resistivity at 300 K for a silicon sample doped with 1.0 times 10^14 cm^-3...
Find the resistivity at 300 K for a silicon sample doped with 1.0 times 10^14 cm^-3 of phosphorous atoms, 8.5 times 10^13 cm^-3 of arsenic atoms, and 1.2 times 10^13 cm^-3 of boron atoms. Assume that the impurities are completely ionized and the mobilities are mu_n = 1500 cm^2/V-s, mu_p = 500 cm^2/V-s, independent of impurity concentrations.
Consider a silicon crystal doped with 10^16 cm-3 Boron. Due to contamination, this crystal also contains...
Consider a silicon crystal doped with 10^16 cm-3 Boron. Due to contamination, this crystal also contains deep level traps with an energy level in the middle of the Si bandgap (In other words, Etrap=Ei) and concentration 10^15 cm-3 . These traps can either act like donors or acceptors. At T=300K, determine if the traps are acting as donors or acceptors. Also determine the position of the Fermi level (EF).
Consider an abrupt p-n junction consisted of a p-side silicon doped with 1.0E+15 cm-3 acceptors and...
Consider an abrupt p-n junction consisted of a p-side silicon doped with 1.0E+15 cm-3 acceptors and an n- side silicon doped with 1.0E+15 cm-3 donors at room temperature (no donors in p-side and no acceptors in n-side). a. Calculate the Fermi levels on each side of the junction with respect to Ei. Use the Special Conditions to find the concentrations. b. Calculate the contact potential. c .Calculate the ratio, Xpo/Xno
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
Consider an abrupt p-n junction formed by two steps; an entire silicon sample was first doped...
Consider an abrupt p-n junction formed by two steps; an entire silicon sample was first doped with 1.0E+15 cm-3 acceptors (step I), and then a half of the sample was doped with 2.0E+15 cm-3 donors at room temperature (step II). a. Calculate the Fermi levels on each side of the junction with respect to Ei. Use the Special Conditions to find the concentrations. b. Calculate the contact potential. c. Calculate the ratio , Xpo/Xno
A silicon crystal is doped with Boron atoms with a dopant density of OSE+17 per cm...
A silicon crystal is doped with Boron atoms with a dopant density of OSE+17 per cm 3 An electric feld points from left to right. On an average, the free electrons in the silicon block (a) Move from left to right (b) Move from right to left (d) Do not move
3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels...
3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels and have the properties listed below. Case 1: Case 2: Case 3: Case 4: Ex-Ey = 0.15 eV Ef-Ey=0.88 eV EF-Ey = 0.55 eV Ex-Ey = 1.09 eV The four cases above show the position of the Fermi Level Er relative to the valence band edge Ev.at dilterent doping levels. a) identify each sample as degenerate and nondegenerate. b) which nondegenerate case shows heavy...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that at N 10" the semiconductor is on the edge of degeneracy, but we can assume that non-degenerate carrier statistics are close enough for this problem.) Answer the following questions assuming room temperature. Assume that the minority electron and hole lifetimes are τ.-, 10's. The lengths of the N and P regions are L = 500 μm and 1. >> x,,x . a) Find the...
A silicon region is doped uniformly with Phosphorous atoms with a doping density of 0.5E 17...
A silicon region is doped uniformly with Phosphorous atoms with a doping density of 0.5E 17 per cm^3. I want to uniformly dope silicon (300K) such that at equilibrium the hole density is 1E+17 per cm^3 (a) What dopant atom will you use to achieve this? (b) What will be the doping density of the dopant atom you use? HIM
6. A silicon wafer is doped with donor atoms, N-5x0 cm(bonus question) (a) Determine (Ec-EF), (EF-Ev), (Ep-E) at 300 K. Assume all the donor atoms are ionized. (b) Plot the position of Fermi level (EF) in the bandgap as a function of temperature for 300 Ts700 K. In this temperature range, it can be assumed that all the donor atoms are ionized. (c) Plot the position of Fermi level (Er) in the bandgap as acceptor atoms are added (N.- 104,...
Find the resistivity at 300 K for a silicon sample doped with 1.0 times 10^14 cm^-3 of phosphorous atoms, 8.5 times 10^13 cm^-3 of arsenic atoms, and 1.2 times 10^13 cm^-3 of boron atoms. Assume that the impurities are completely ionized and the mobilities are mu_n = 1500 cm^2/V-s, mu_p = 500 cm^2/V-s, independent of impurity concentrations.
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
A silicon crystal is doped with Boron atoms with a dopant density of OSE+17 per cm 3 An electric feld points from left to right. On an average, the free electrons in the silicon block (a) Move from left to right (b) Move from right to left (d) Do not move
3. Silicon samples with band-gas 1.1 eV at 300 Kelvin, are doped at four different levels and have the properties listed below. Case 1: Case 2: Case 3: Case 4: Ex-Ey = 0.15 eV Ef-Ey=0.88 eV EF-Ey = 0.55 eV Ex-Ey = 1.09 eV The four cases above show the position of the Fermi Level Er relative to the valence band edge Ev.at dilterent doping levels. a) identify each sample as degenerate and nondegenerate. b) which nondegenerate case shows heavy...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that at N 10" the semiconductor is on the edge of degeneracy, but we can assume that non-degenerate carrier statistics are close enough for this problem.) Answer the following questions assuming room temperature. Assume that the minority electron and hole lifetimes are τ.-, 10's. The lengths of the N and P regions are L = 500 μm and 1. >> x,,x . a) Find the...
A silicon region is doped uniformly with Phosphorous atoms with a doping density of 0.5E 17 per cm^3. I want to uniformly dope silicon (300K) such that at equilibrium the hole density is 1E+17 per cm^3 (a) What dopant atom will you use to achieve this? (b) What will be the doping density of the dopant atom you use? HIM
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