Explain why the intrinsic carrier concentration is temperature dependent with reference to band theory.
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Explain why the intrinsic carrier concentration is temperature dependent with reference to band theory.
The intrinsic tempature of a semiconductor is the tempature at wich the intrisic carrier concentration equels the imparity concentration. Find the intrinsic tempature for a silicon sample doped with 10^15 phosphorus atoms/cm^2
Calculate the intrinsic carrier concentration in silicon at T = 250K and T = 400K.
You have an intrinsic semiconductor. (a) When temperature T = 0[K], obtain the density of electrons n in the conduction band and that of holes p in the valence band; (b) When T = 300[K], obtain the mathematical relationship between n and p (e.g., n=p, n>p, or n<p); (c) When T = 300[K], obtain the mathematical relationship between the np product and the intrinsic carrier concentration ni.
The electron concentration and hole concentration in intrinsic silicon are equal. Explain why the fermi level is not 'exactly' at the middle of the bandgap.
6.2. Germanium is an interesting semiconductor because it has a small band gap (Eg 0.67eV). As a result, it has a higher intrinsic concentration ni than either silicon or GaAs. Do you expect the conductivity of intrinsic germanium to be less than or greater than that of intrinsic silicon? How about compared to GaAs? Explain Why?
6.2. Germanium is an interesting semiconductor because it has a small band gap (Eg 0.67eV). As a result, it has a higher intrinsic concentration...
Use collision theory to explain why reaction rates depend on the concentration of the reactants and on the temperature of the reaction mix. PLEASE EXPLAIN.
e Calculate the position of EF with respect to E. 5. Explain why holes are found wny holes are found near the top of the valence band, whereas conduction electrons are found at the bottom of the conduction band. O. Using the Figure 3-17 in your text (also attached), fill in the following table: Semiconductor 300°K 400°K 500°K Ge GaAs For Ge at 500°K and Si at 400°K, show on the attached graph how you determined the value you put...
Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy E, and the Fermi energy E. 1. 2 marks Find an expression for Ee -Ef, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration ND. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon so that Ec- E0.2 eV. 3 marks
(iv) Explain what process(es) will be different at the higher temperature producing the different features from (ii) to (iii). (2) (b) A structure that we sometimes encounter in electronic devices is a so-called p-i-n structure, consisting of a p-doped layer, an intrinsic layer and then an n-doped layer as shown in the drawing below. Assume Si as the semiconductor: P US- [Intrinsic 5 XION n kx 10 cm Assume a temperature of 300 K and with the doping as indicated...
(TCD) including a schematic diagram. Which carrier gases are the most suitable for TCD. Explain why? Define the factors affecting band spreading using the Van Deemter3 equation Why is derivatization performed in gas chromatography. Describe 3 one derivatization reaction What is end-capping. Why is it used in liquid chromatography What is the signal noise ratio? What values are appropriate for (A) qualitative analysis (B) quantitative analysis? Q2(a) 3 (iv)
(TCD) including a schematic diagram. Which carrier gases are the most...