Determine the parameters below assuming the following biasing conditions;
VT = 0.5 (V) , VG=5V
1) Determine IDsat assuming saturation occurs due to pinch-off?
2)Determine IDsat if the MOSFET is velocity saturated at vs = 5×10^6 cm/s??
Determine the parameters below assuming the following biasing conditions; VT = 0.5 (V) , VG=5V 1)...
For the n-channel E-MOSFET transistor in the circuit, the parameters are VT N = 0.4 V, Kn = 120μA/V2. Determine VGS, ID, and VDS. Sketch the DC and AC load lines and plot the Q-point. Assume AC input is connected to the gate and output is connected to the drain. +5 V S RD= 1.2 kΩ = 14 kΩ S R) = 6 ΚΩ: Rs= 0.5 ΚΩ –5 V
help me please subscription 5. The PMOS transistor has Vtp=-1 V. If the voltages of three terminals are: Vg=2 V, Vs=5v, Vd=3.5V, then the transistor is operated in a) Cut off region b) Triode region c) Saturation region d) Unknown 6. The voltage transfer characteristic of a CMOS inverter is shown in Fig. 4. Threshold voltages Vrn = |Vpl = 0.5V. If Vpo=5V and the input v=3V, then Saved to this PC a) Both PMOS and NMOS in triode region...
Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig. 4 Question 4: W a Find the value of Vas b If the threshold voltage of the NMOS = 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) e Write the formula to calculate Current (ID) for the circuit in Figure 3. Fig. 3 Question 5: V=5V ww a...
December 2013 Elec-B5, Advanced Electronics QUESTION (1) In the following circuits, assume all transistors have the following parameters: K 0.5 mA/V2, VT,-1 V and λ-0.02. Given: 1M bias I mA M M2 꼬 + 2 고 (~ 2 a) Estimate the differential gain vourlVIN in (V/V) b) Find the common mode input resistance Ricm c) Find the common mode input range. d) Estimate the common mode rejection ratio, CMRR. Express your result in dB. Useful formulae: for n-channel MOSFET (6...
Q2 MOSFET and I-V Curves (Total 30 pts) Q2.1 Consider the band diagrams (conduction band) of a N-MOSFET along the channel (x) direction as shown in fig. 1. In fig. 1, the solid curve shows the band diagram with the gate voltage VG = 0. All the variables have their usual meaning. Which of the dashed curves (case I or case II) in fig. 1 represents of the band diagram (conduction band) of the N-MOSFET with VG >0? 5 pts...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and Vin=-Vt=1V. (20 pts) +5 V a) Which MOSFET is cut-off, NMOS (QN) or PMOS (QP) for VF-5V? Why (5 pts) Qp -5 Vo Ipp Vo VION ON -5 V b) When VF-5V, in which mode, saturation or triode, the circuit operate? Explain why? (5 pts) c) Find the drain current ipy and ipp and the voltage vo for VF-5V (10 pts)
the Ebers-Moll VT = kB T/e. (c) Use your result from part (b) to find the resistance Rg necessary to generate 7.5μΑ of current with 20μΑ of programming current. (programming 6. FET I-V Curves. [10 pts.] Consider the family of I- V curves for a field effect transistor (FET) shown below. (a) Are the curves shown for a JFET or or an en- hancement mode MOSFET? Explain briefly how you know. (b) Table values for the given gain-source volt- ages...
Q1 Which of the following is true about the surface mobility of MOSFETs ? Select one: a. Surface mobility goes up as electric field strength increases b. Surface mobility stays the same when silicon is put under mechanical stress c. Surface mobility is the same regardless of the surface orientation of the silicon crystal d. None of these e. Surface mobility is higher for holes than it is for electrons Q2 What is the drain current in microamps for an...
For the circuit shown below, let Vcc 9 V R2 RE-0.11 kQ, R1 3.6 k2. and R2 -5.6 kQ. The transistor parameters are β-200, VBE(on)-OTV, VA-100 V and VT = 0.026 V. (a) Determine the quiescent value of IEQ (b) Find the small-signal voltage gain Av Vo/vs (c) Determine the output resistance R, looking into output terminals Av= 0.5589 Ro-0.4688 Ω Ro-0.9118 Ω leQ- 23.76 mA Ra " 0.6538 Ω leo 39.52 mA A, 0.9938 For the circuit shown below,...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...