Is it possible to measure Hall-effect on n-type or p-type silicon at liquid nitrogen temperature? Support...
Is it possible to measure Hall-effect on n-type or p-type silicon at liquid nitrogen temperature? Support your answer with calculations of charge carrier concentration.
Homework Answers
The hall effect can be measured at liquid nitrogen temperature
(-210 degree celcius).
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Is it possible to measure Hall-effect on n-type or p-type
silicon at liquid nitrogen temperature? Support...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
5.3. A Hall effect device is used to measure the strength of an external magnetic field....
5.3. A Hall effect device is used to measure the strength of an external magnetic field. The device is oriented in the way described in Fig. 5.1. It is made from a cube of p-type silicon with hole concentration cm3 where the length of each side of the cube is 1 mm current of 3 mA is applied through the device. The voltage measured across the device is 2.4 mV. Find the strength of the external magnetic flux density, |B|.
Consider a Hall-effect sensor using 50.0-μm-thick silicon, doped to make it an N-type semiconductor with free...
Consider a Hall-effect sensor using 50.0-μm-thick silicon, doped to make it an N-type semiconductor with free electron density 2.86×10^(15) electrons / cm^(3) With a sensor carrying 550-μA What is the maximum Hall potential at a point where the earths Magnetic field is 28.5 μT
please answer as soon as possible 6. (15 points) Hall measurement was performed on an n-type...
please answer as soon as possible
6. (15 points) Hall measurement was performed on an n-type semiconductor and a Hall coefficient R = -8.5 cm/C was obtained. (a) (pt) What is the carrier concentration of the semiconductor? Ans. (1) 7.35 x 1029m 5.35 x 1025m (11) 6.5 x 10 cm (iv) 8.35 x 1015 cm? (v) 2.45 x 1023m- (6) 3pt) Given that the resistivity of the semiconductor is 0.015. - cm at room temperature (300K), what is the electron...
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type...
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...
2. If a silicon sample has E - Ef = 0.28 eV what is its type...
2. If a silicon sample has E - Ef = 0.28 eV what is its type
and minority carrier concentration? [2 pts.]
Please only answer if you are CONFIDENT that your answer is
correct, thanks
2. If a silicon sample has Ec-Er = 0.28 eV what is its type and minority carrier concentration? [2 pts.] a. n-type; 7x10'cm*, b. p-type; 1.5x10 cm c. n-type: 3.2x10 cm d. p-type; 3.2x10 cm
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen temperature (77K...
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen temperature (77K) the intrinsic carrier concentration is 10/cm3. At this temperature the electron and hole mobilities are the equal, μ.-An-36192 cm 2/Vs. If 100 V is applied across the Ge cube at 77K, what is the current you measure?5 pt a) b) If uah4.9-107-T-166 (cm2V1s1), what is the current at 300K?5 pt
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen...
9. An n- type germanium semiconductor sample is brought into contact with a p - type...
9. An n- type germanium semiconductor sample is brought into contact with a p - type silicon sample. The germanium sample has a carrier concentra- tion of 4.5 x 1016cm-3 and the silicon sample has a carrier concentration of 1.0 × 1016cm-3. At 300K the intrinsic carrier concentration of germanium is 2.4 × 1013cm-3 and its band gap is 0.66 eV. At 300K the intrinsic carrier concentration of silicon is 1.45 × 1010cm-3 and its band gap is 1.12 eV....
2. An abrupt silicon p-n junction is formed from p-type material with a resistivity of 1.3x10-...
2. An abrupt silicon p-n junction is formed from p-type material with a resistivity of 1.3x10- 12m and n-type material with resistivity of 4.6x10- Sam at room temperature. The lifetimes of the p- and n-materials are 100 us and 150 us respectively, and the junction area is 1.0 mm?.if Mp 4.8x102 m²/V.s „Mn = 0.135 m²/V.s and n; = 1.5x1016 carrier /m , calculate the reverse bias leakage current. Then calculate forward bias current if a 0.3 volt is applied.
A Hall sample is made of p-type silicon doped with 1019 borons/cm². Its resistivity is 0.009...
A Hall sample is made of p-type silicon doped with 1019 borons/cm². Its resistivity is 0.009 ohm-cm. The sample has a cross section of 0.2mmx2mm and a length of 50mm. A voltage of 10V is applied in the longitudinal (length) direction. The effective mass of holes is 2 of electron rest mass. Temperature is 300K. Calculate: a. The Hall coefficient, b. Hole mobility, c. Longitudinal electrical field, d. Drift velocity, e. Mean free time, f. The Hall voltage across 2mm...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
5.3. A Hall effect device is used to measure the strength of an external magnetic field. The device is oriented in the way described in Fig. 5.1. It is made from a cube of p-type silicon with hole concentration cm3 where the length of each side of the cube is 1 mm current of 3 mA is applied through the device. The voltage measured across the device is 2.4 mV. Find the strength of the external magnetic flux density, |B|.
please answer as soon as possible
6. (15 points) Hall measurement was performed on an n-type semiconductor and a Hall coefficient R = -8.5 cm/C was obtained. (a) (pt) What is the carrier concentration of the semiconductor? Ans. (1) 7.35 x 1029m 5.35 x 1025m (11) 6.5 x 10 cm (iv) 8.35 x 1015 cm? (v) 2.45 x 1023m- (6) 3pt) Given that the resistivity of the semiconductor is 0.015. - cm at room temperature (300K), what is the electron...
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...
2. If a silicon sample has E - Ef = 0.28 eV what is its type
and minority carrier concentration? [2 pts.]
Please only answer if you are CONFIDENT that your answer is
correct, thanks
2. If a silicon sample has Ec-Er = 0.28 eV what is its type and minority carrier concentration? [2 pts.] a. n-type; 7x10'cm*, b. p-type; 1.5x10 cm c. n-type: 3.2x10 cm d. p-type; 3.2x10 cm
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen temperature (77K) the intrinsic carrier concentration is 10/cm3. At this temperature the electron and hole mobilities are the equal, μ.-An-36192 cm 2/Vs. If 100 V is applied across the Ge cube at 77K, what is the current you measure?5 pt a) b) If uah4.9-107-T-166 (cm2V1s1), what is the current at 300K?5 pt
Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen...
9. An n- type germanium semiconductor sample is brought into contact with a p - type silicon sample. The germanium sample has a carrier concentra- tion of 4.5 x 1016cm-3 and the silicon sample has a carrier concentration of 1.0 × 1016cm-3. At 300K the intrinsic carrier concentration of germanium is 2.4 × 1013cm-3 and its band gap is 0.66 eV. At 300K the intrinsic carrier concentration of silicon is 1.45 × 1010cm-3 and its band gap is 1.12 eV....
2. An abrupt silicon p-n junction is formed from p-type material with a resistivity of 1.3x10- 12m and n-type material with resistivity of 4.6x10- Sam at room temperature. The lifetimes of the p- and n-materials are 100 us and 150 us respectively, and the junction area is 1.0 mm?.if Mp 4.8x102 m²/V.s „Mn = 0.135 m²/V.s and n; = 1.5x1016 carrier /m , calculate the reverse bias leakage current. Then calculate forward bias current if a 0.3 volt is applied.
A Hall sample is made of p-type silicon doped with 1019 borons/cm². Its resistivity is 0.009 ohm-cm. The sample has a cross section of 0.2mmx2mm and a length of 50mm. A voltage of 10V is applied in the longitudinal (length) direction. The effective mass of holes is 2 of electron rest mass. Temperature is 300K. Calculate: a. The Hall coefficient, b. Hole mobility, c. Longitudinal electrical field, d. Drift velocity, e. Mean free time, f. The Hall voltage across 2mm...
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