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A p+-n junction is formed in an n-type substrate with ND=1015cm-3. If the junction contains 1015...

A p+-n junction is formed in an n-type substrate with ND=1015cm-3. If the junction contains 1015 cm-3 generation-recombination centers located 0.02 eV above the intrinsic Fermi level of silicon with σn= σp= 10-15cm2 (Vth=107cm2), calculate the generation and recombination current at -0.5 V.

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