Why is the common collector configuration more common than Common Base and Common Emitter?
Why is the common collector configuration more common than Common Base and Common Emitter?
Homework Answers
not really the common emitter is more common than the common base and common collector. the reason are given below
In common emitter configuration, the input signal can be connected with respect to ground.
Also the output voltage is also taken with respect to ground.
Generally the input signal which we want to amplify using CE configuration, for example music signal from a mobile phone, or iPod, has one ground terminal i.e. the negative terminal of the battery. So this negative terminal of the mobile battery easily adapts to the negative terminal of CE circuit.
Also if we have to use this CD circuit as pre amplifier and want its output to be connected to power amplifier, then the negative terminals of both these circuits can be easily made common.
So these are just the practical easy methods which prefer the use of CE circuit over, CC circuit.
you may prefer this chart box also.
you can also see the power gain
in the common emitter is high, input resistance and output
resistance both are medium,
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Why is the common collector configuration more common than
Common Base and Common Emitter?
(27) From memory only, sketch the common-emitter configuration (for npn and pnp) and insert the proper...
(27) From memory only, sketch the common-emitter configuration (for npn and pnp) and insert the proper biasing arrangement with the resulting current directions for Is, Io, and le 3.7 Common-Collector Configuration 28 An input voltage of 2 Vrms (measured from base to ground) is applied to the circuit of Fig. 3.21.
a- Explain in your own words (not more than 40 words) why it’s needed in some...
a- Explain in your own words (not more than 40 words) why it’s
needed in some cases to design a multistage amplifier.
b- As designer, which of multistage amplifier in the figure
below you will choose (a or b)? Explain why in your own words.
Multistage Amplifier (a) Vin Common source Common Emitter Vout Common Collector Multistage Amplifier (b) Vin Common Collector Common Emitter Vout Common Source
Please explain part A in details thx! Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 a...
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
Q.11. Calculate the base, collector and emitter currents for the circuit given in Fig. 01. Also,...
Q.11. Calculate the base, collector and emitter currents for the circuit given in Fig. 01. Also, determine the value of the voltage drop between collecter and emitter (Ve). Assume that the transistor is in active region and the value current amplification factor is 200. Given that the base-emitter voltage V is 0.7 V. Vcc - 10V 21 Ves = 4V W 220 KS2 Fig. Q11
1.what is the relation between emitter current and collector current in the transistor. 2. what is...
1.what is the relation between emitter current and collector current in the transistor. 2. what is the relation between emitter ,collector and base current in th transistor ??
d emier junction is forward biased and emitter-collector junction is reversed biased t. In cut oft...
d emier junction is forward biased and emitter-collector junction is reversed biased t. In cut oft mode junction is forward biased and emitter-collector junction is forward biased junction is reversed biased and emitter-collector junction is reversed biased junction is reversed biased and emitter-collector junction is forward biased is c) The base-emitter ) The to operate in active mode Collector-Base junction must be 7 For the BJT a) Heavily doped b) Must reversed bias c) Must be forward bias d) Lightly...
Perform a simple initial design of an ac coupled common-emitter amplifier with four resistor biasing and emitter by-pass...
Perform a simple initial design of an ac coupled common-emitter
amplifier with
four resistor biasing and emitter by-pass capacitor, to have a
voltage gain of about
100, for the following conditions. Justify any approximations used.
(Assume Ic=1/300 A)
i)Transistor ac common-emitter gain, B, 100 ii) Supply voltage ofV0c-20V iii) Allow 10% Vcc across RE DC collector voltage of 10 V iv) v) DC current in the base bias resistors should be ten times greater than the DC base current. Assume...
HELP with finding 8 and 9 2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (k...
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
QUESTION 3 In saturation, collector-emitter voltage is O a.5 V b.equal to collector-bias voltage O c....
QUESTION 3 In saturation, collector-emitter voltage is O a.5 V b.equal to collector-bias voltage O c. minimum O d. maximum QUESTION 4 When operated in cutoff and saturation, the transistor acts like a a linear amplifier b. switch O c. variable capacitor Od variable resistor If a sinusoidal voltage is applied to the base of a biased on transistor and the resulting sinusoidal collector-to-emitter voltage is clipped near zero volts, the transistor is to Clipped ICO VE Clipped OVO a....
Figure 1 is a common-emitter amplifier (with input divider). Calculate the base resistance Rb1 that is...
Figure 1 is a common-emitter amplifier (with input divider).
Calculate the base resistance Rb1 that is needed to bias the device
at a collector voltage of Vc≈ 6-7 V. Assume a nominal value of β≈
200 for this calculation.
Λ +10 V 2.2 ΚΩ & Kh1 1 1μF V. 10 ΚΩ 1μFT o " Πι ΓW-0 . Y 10028 10 ΚΩ 1ΚΩ ξ 10 μF
(27) From memory only, sketch the common-emitter configuration (for npn and pnp) and insert the proper biasing arrangement with the resulting current directions for Is, Io, and le 3.7 Common-Collector Configuration 28 An input voltage of 2 Vrms (measured from base to ground) is applied to the circuit of Fig. 3.21.
a- Explain in your own words (not more than 40 words) why it’s
needed in some cases to design a multistage amplifier.
b- As designer, which of multistage amplifier in the figure
below you will choose (a or b)? Explain why in your own words.
Multistage Amplifier (a) Vin Common source Common Emitter Vout Common Collector Multistage Amplifier (b) Vin Common Collector Common Emitter Vout Common Source
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
Q.11. Calculate the base, collector and emitter currents for the circuit given in Fig. 01. Also, determine the value of the voltage drop between collecter and emitter (Ve). Assume that the transistor is in active region and the value current amplification factor is 200. Given that the base-emitter voltage V is 0.7 V. Vcc - 10V 21 Ves = 4V W 220 KS2 Fig. Q11
d emier junction is forward biased and emitter-collector junction is reversed biased t. In cut oft mode junction is forward biased and emitter-collector junction is forward biased junction is reversed biased and emitter-collector junction is reversed biased junction is reversed biased and emitter-collector junction is forward biased is c) The base-emitter ) The to operate in active mode Collector-Base junction must be 7 For the BJT a) Heavily doped b) Must reversed bias c) Must be forward bias d) Lightly...
Perform a simple initial design of an ac coupled common-emitter
amplifier with
four resistor biasing and emitter by-pass capacitor, to have a
voltage gain of about
100, for the following conditions. Justify any approximations used.
(Assume Ic=1/300 A)
i)Transistor ac common-emitter gain, B, 100 ii) Supply voltage ofV0c-20V iii) Allow 10% Vcc across RE DC collector voltage of 10 V iv) v) DC current in the base bias resistors should be ten times greater than the DC base current. Assume...
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
QUESTION 3 In saturation, collector-emitter voltage is O a.5 V b.equal to collector-bias voltage O c. minimum O d. maximum QUESTION 4 When operated in cutoff and saturation, the transistor acts like a a linear amplifier b. switch O c. variable capacitor Od variable resistor If a sinusoidal voltage is applied to the base of a biased on transistor and the resulting sinusoidal collector-to-emitter voltage is clipped near zero volts, the transistor is to Clipped ICO VE Clipped OVO a....
Figure 1 is a common-emitter amplifier (with input divider).
Calculate the base resistance Rb1 that is needed to bias the device
at a collector voltage of Vc≈ 6-7 V. Assume a nominal value of β≈
200 for this calculation.
Λ +10 V 2.2 ΚΩ & Kh1 1 1μF V. 10 ΚΩ 1μFT o " Πι ΓW-0 . Y 10028 10 ΚΩ 1ΚΩ ξ 10 μF
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