1. When a hole moves from the p-side of a junction to the n-side, why does...
1. When a hole moves from the p-side of a junction to the n-side, why does its energy increase?
2. Discuss how a missing atom at a lattice side contributes to the conductivity of a semiconductor
3. Estimate the energy of a photon of X rays. (Answer: 12 keV)
4. On the one hand, we say that electrons in atoms have discrete energies; on the other hand, we say that there is inherent uncertainty in our ability to measure energies. Is there a conflict here?
5. You have just calculated the number density of p-carriers in undoped germanium, a semiconductor, at room temperature. Is it necessary to make a second calculation to find the number density of free electrons?
6. Estimate the energy of a photon of visible light. (Answer: 2.4 eV)
Homework Answers
Add Answer to:
1. When a hole moves from the p-side of a junction to
the n-side, why does...
Crystal types are sometimes classified based on the type of bonding, for example ionic crystals. Name...
Crystal types are sometimes classified based on the type of bonding, for example ionic crystals. Name two other types of crystal. (b) A crystal is formed from N atoms. Give a brief description of the origin of energy bands in solids. (c) Sketch the band structure of an undoped semiconductor, label the conduction and valence bands, and the relevant energies. Mark the position of the Fermi energy. Make a second sketch and assume the semiconductor has been doped n -...
Applied quantum mechanics 1. Calculate the carrier concentrations (p and n) for Si at 300k for...
Applied quantum mechanics
1. Calculate the carrier concentrations (p and n) for Si at
300k for the following doping concentrations:
2.
(a) ND = 1015/cm3
(b) NA = 1018/cm3
(c) ND = 5 x 1017/cm3
Calculate the majority and minority carriers for each side of
an N+P junction if ND = 2 x 1017/cm3 for the n-side, and NA =
1014/cm3 for the p-side.
Assume the semiconductor is Si and the temperature is
300K.
3. Determine the energy of:
(a)...
Please help me 1. In degenerate p-type silicon, a. The Fermi energy is above the valence...
Please help me
1. In degenerate p-type silicon, a. The Fermi energy is above the valence energy and below the intrinsic Fermi energy b. The Fermi energy is below the valence energy c. The Fermi energy is above the conduction energy d. The Fermi energy is below the conduction energy and above the intrinsic Fermi energy 2. A semiconductor has No 5X 1010 cm3 and N-2X 1018 cm2. It is a. b. C. d. N-type and electrons are the majority...
A p-n junction is created by doping the right side of a piece of silicon with...
A p-n junction is created by doping the right side of a piece of silicon with 1014 atoms/cm3 of phosphorus and the left side with 1018 atoms/cm3 of boron. Assume that the dopants are fully ionized, and assume the junction is at x = 0 with x+ pointed to the right. a) Plot by hand (roughly to scale) an energy band diagram of the junction and label EGAP, EC, EV, EF and EFi. Using the effective density of states, calculate...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of The total current density Conductivity - Problem 2 Consider Germanium sample with the following characteristics the electron and hole mobility for Ge is 0.39 and 0.19 m2N.s The electron and hole effectives masses are 0.56me and 0.4 me The energy gap is 0.67 eV at T-27°C 1) 2) Find the intrinsic carrier concentration for Ge What is the resistivity of the Ge sample...
Wdep P-Type N -Type Q1. Consider the PN junction at equilibrium shown in the figure above....
Wdep P-Type N -Type Q1. Consider the PN junction at equilibrium shown in the figure above. Both N-side and P-side has same doping density NA ND 1017 /cm3. Assume both electron and hole mobility to be same, i.e Me - 1000cm2/Vs. a equilibrium energy band diagram. Find (EF Et at(i)x-0. (ii) x »xn (iii) X <K_Xp Find the value of built-in voltage and total depletion width (5+5 points) Find electron and hole densities at (i) x = 0. (ii) x...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...
state the equation that you use Semiconductor Germanium has a density of 5323 a. cm- and...
state the equation that you use
Semiconductor Germanium has a density of 5323 a. cm- and atomic mass of 72.63u. If we assume that Germanium can contribute 1 conducting electron per atom, calculate the maximum number of conducting electrons in a silicon sample of 2cm X 10cm X 10cm. E1, frd = eftew+1E2, ~êr = ()**; Superconductor E3, M05T, = constant; E4, E,0) = 3.54k87c; E5, E,(T) = 1.74E,(0)(1-3)*; E6, critical magnetic field B.(T) = B_(0)(1-). Order of energy of...
Crystal types are sometimes classified based on the type of bonding, for example ionic crystals. Name two other types of crystal. (b) A crystal is formed from N atoms. Give a brief description of the origin of energy bands in solids. (c) Sketch the band structure of an undoped semiconductor, label the conduction and valence bands, and the relevant energies. Mark the position of the Fermi energy. Make a second sketch and assume the semiconductor has been doped n -...
Applied quantum mechanics
1. Calculate the carrier concentrations (p and n) for Si at
300k for the following doping concentrations:
2.
(a) ND = 1015/cm3
(b) NA = 1018/cm3
(c) ND = 5 x 1017/cm3
Calculate the majority and minority carriers for each side of
an N+P junction if ND = 2 x 1017/cm3 for the n-side, and NA =
1014/cm3 for the p-side.
Assume the semiconductor is Si and the temperature is
300K.
3. Determine the energy of:
(a)...
Please help me
1. In degenerate p-type silicon, a. The Fermi energy is above the valence energy and below the intrinsic Fermi energy b. The Fermi energy is below the valence energy c. The Fermi energy is above the conduction energy d. The Fermi energy is below the conduction energy and above the intrinsic Fermi energy 2. A semiconductor has No 5X 1010 cm3 and N-2X 1018 cm2. It is a. b. C. d. N-type and electrons are the majority...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of The total current density Conductivity - Problem 2 Consider Germanium sample with the following characteristics the electron and hole mobility for Ge is 0.39 and 0.19 m2N.s The electron and hole effectives masses are 0.56me and 0.4 me The energy gap is 0.67 eV at T-27°C 1) 2) Find the intrinsic carrier concentration for Ge What is the resistivity of the Ge sample...
Wdep P-Type N -Type Q1. Consider the PN junction at equilibrium shown in the figure above. Both N-side and P-side has same doping density NA ND 1017 /cm3. Assume both electron and hole mobility to be same, i.e Me - 1000cm2/Vs. a equilibrium energy band diagram. Find (EF Et at(i)x-0. (ii) x »xn (iii) X <K_Xp Find the value of built-in voltage and total depletion width (5+5 points) Find electron and hole densities at (i) x = 0. (ii) x...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...
state the equation that you use
Semiconductor Germanium has a density of 5323 a. cm- and atomic mass of 72.63u. If we assume that Germanium can contribute 1 conducting electron per atom, calculate the maximum number of conducting electrons in a silicon sample of 2cm X 10cm X 10cm. E1, frd = eftew+1E2, ~êr = ()**; Superconductor E3, M05T, = constant; E4, E,0) = 3.54k87c; E5, E,(T) = 1.74E,(0)(1-3)*; E6, critical magnetic field B.(T) = B_(0)(1-). Order of energy of...
Most questions answered within 3 hours.
-
. Please give the mechanism for this type of problem. Step by
Step
The toxin that...
asked 2 minutes ago -
If you have a 1M stock solution and you want to dilute 1 :10
with water,...
asked 4 minutes ago -
In a load instruction, the effective address is obtained by
A) Retriving the address from a...
asked 4 minutes ago -
Use the following information to answer this question.
Windswept, Inc. 2017 Income Statement ($ in millions)...
asked 5 minutes ago -
A mutual fund salesperson has arranged to call on four people
tomorrow. Based on past experience...
asked 38 minutes ago -
Let the RV Y has the pdf
f ( y ) = 6 y ( 1...
asked 50 minutes ago -
Question 12
Where should a copy of a private key should be placed so it is...
asked 7 minutes ago -
What is the entropy change to the surroundings when 1 mol of ice
melts in someone's...
asked 27 minutes ago -
Pt1
An electrochemical cell is set up at 25°C based on the overall
reaction represented by...
asked 33 minutes ago -
Explain traveling wave theory. Explain how the peaking of the
wave leads to action potentials and...
asked 24 minutes ago -
If you mixed 35.0 mLmL of 0.100 M Tris-HCl with 65.0
mLmL of 0.200 M Tris-base, what would...
asked 21 minutes ago -
Which force do you think wields a stronger influence over our
ethical behavior – our personal...
asked 26 minutes ago