The BiCMOS circuit shown in Figure P11.82 is equivalent to a pnp bipolar transistor with an infinite input impedance. The bias current is IQ = 0.5 mA. The MOS transistor parameters are VTP = −0.5 V, Kp = 0.7mA/V2, and λ = 0, and the BJT parameters are β = 180, VBE (on) = 0.7 V, and VA = ∞. (a) Sketch the small-signal equivalent circuit, (b) Calculate the small-signal parameters for each transistor, (c) Determine the small-signal voltage gain Aυ = υo/υi for (i) RL = 10kΩ and (ii) RL = 100kΩ.
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