Design a CE amplifier using a Darlington transistor pair with a combined VoE = 1.2V (Combined)...
Calculate the voltage gain (Av) for the loaded Common Emitter Amplifier below: BAC 200 for all transistors. Assume re 15 Q for the CE Amplifier. Ignore re' for the DP Amplifier Vcc 12 V, R1 56 K, R2 10 KQ, R4 22 KQ R3 5.6 KQ, RL 8 RE(CE) 628 0, RE(CC) 330 Rc 3.5 KQ, Enter your results. No units. SR3 R1 RC C3 Vcc C1 Beta Q2a HH Vin Beta Q1 Beta Q2b C4 R4 Vs R2 C2...
ee e A Quèstion 27 Calculate the minimum power rating (Po) for transistor in the loaded Common Emitter Amplifier below Assume Boc- BAC= 149 , Use the exact method to calculate Ip. R1 680 R, R2 510 Q Voc 16 V RL 120 5.1 Q RE2 80 Q, Rc 85 RE1 Enter your results in mW SR1 RC C3 Vcc Vout C1 HI Beta Vin RL Vs RE1 RE2 C2 R2 ee e A Quèstion 27 Calculate the minimum power...
QUESTION (1) Transistor Mi in this common base amplifier circuit has the following characteristics: +Vc VTH =1 V Rp R, C. K 1 mA/V2 2 0.1 R Given: Vcc 2 mA, 10 V, lbias Ct C2 0, 5 k2, RD 2 k2 RI 10 k, R2 R (12 points) a) Determine the small signal gain, vo/Vin. (4 points) b) Determine the input resistance, Rin. (4 points) c) Determine the output resistance, Ro. Useful formulae: for n-channel MOSFET triode region =...
Design the inductively coupled common emitter (CE) amplifier shown in Fig. for Q. 7(a) to drive a 2 kQ. load with Vcc = 12 V, VBE = 0.7 Y, β = 200, Rin = 4 kQ. and Av = -10. Determine the current gain Ai and power delivered to the load Po. [Hint: Draw the small signal equivalent circuit and use Rg = 0.1BRę, where R, =R,||R, ). -- -- oom. . b 09 PR Vo - . Fig. for...
Voc Ri Rc C2 + RS G Q2N3904 RL Vout 2 R2 RE CE Rin Rout Cu B 1x B C o + V be : Cr 8m'be E VCC R R2 Rc RE RS RL С. Cz CE 12 V 8.2 kg 3.9 ko 6.3 k2 3.3 kΩ 3 ko 3.9 ko 10 uF 1uF 100 u Assume the 2N3904 has a 8 =100, Veron} = 0.7V, VA= 100V, C=100, C=13.9pF and Ce=8pF. Use the emission coefficient as n...
In Figure 9, the transformer primary voltage is 120V and step-downratiois 10:1 Assume the practical diode model. 9. a) i) Name the type of circuit (1 mark) Determine the peak output voltage, Volout) (4 marks) iiI What is the PIV rating required for the diodes (2 marks) D, D3 120 V psecy R Plout) 10 k2 DA Figure 9 b) A certain power supply filter produces an output with a ripple of 100mV peak-to- peak and a dc value of...
6.5 BI C2 Cl sig in 0 Design the bias circuit of the CE amplifier shown to obtain IE= 0.5 mA and Vc= +6 V. Design for a dc voltage at the base of 5 V and a current through RB2 of 50 μΑ. Let Vcc-+15 V, β-100, and VBE 0.7 V. a) Specify the values of RBi, RB2, RE, and Rc b) Also give the values of the BJT small-signal parameters gm, rr , and ro at the bias...
Problem 2: In the circuit on Figure P2, BJT NPN Q1 and Q2 emulate a Darlington Pair (DP). It should be noted that Q1 and Q2 are such that their current gains are B1 B2 = B = 99. Moreover, capacitors C1 and C2 can be assumed to be very large. Note: The DC analysis of the DP circuit below can be done in a similar fashion as what you do when only dealing with one transistor. Express the current...
Q.A. 2 -Statement: DC biasing of a CE amplifier circuit is as in Fig.2 Assume the parameters, VCC = 12 volt, RE = 450 ohm; = 100; RL = 2250 ohm, RC =1000 ohm and source resistance and Rs = 2500 ohm. Also, the device emitter resistance re is negligible. The amplifier is excited by a source, vs(t) = Vm × sin(2ft) with Vm = 500 mV peak and f = 5500 Hz; and, coupling and by-pass capacitors can...
please I need details l and....Debate Club | Offic A) Theoretical Design Design a common emitter BJT amplifier with the following requirements: -Rin-10 K2, and Ro-45 ㏀ (Neglect the Early voltage Effect) Vo/Vsig- Gv-40 VIV or 32 dB " VCC-9 V V, IC-1mA, VCE-3.25V and β-100 RL-40 kQ, Rsige I ka, R 1-3R2, and C1-C2-1 μF Voc RC C2 R1 Rsig C1 RL R2 RE B) Verify your design using Orcad Capture Pspice by doing 1) AC sweep (frequency response):...