Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be= Voc +10 V RB We are going to consider the common emitter configuration circuit shown in the figure to test a 2N3904 npn Bipolar Junction Transistor (BJT) under DC bias conditions. Your circuit should place a fixed collector resistor, Rc, in the circuit to prevent the collector current, Ic, from exceeding 40 mA (for this, you know that the minimum value of is zero)....
1.0 kn. RE-390 Ω, r-15 Ω. and ßac-75. 5. For a common-emitter amplifier, Rc Assuming that Rg is completely bypassed at the operating frequency, the voltage gain is (a) 66.7 (d) 75 (b) 2.56 (c) 2.47 6. In the circuit of Question 5, if the frequency is reduced to the point where Xctbypass) RE, the voltage gain (a) remains the same (b) is less (c) is greater 7. In a common-emitter amplifier with voltage-divider bias, Rimlbase) 68 k2, Ri 33...
Could someone please help me on how I should be configuring the circuit in Figure 4(a) in Multisim? Basically not understanding question #1 in the Procedure. Cannot keep Vrb the same value while adjusting Vcc. Then when trying to adjust Vbb to hold Vrb, Ib changes. Any help is appreciated! Discrete Devices Section LAB 4 BJT CHARACTERISTICS AND BIASING Objective: The objective of this laboratory is to examine the operation of a bipolar junction transistor and plot its output characteristics...
A Si p-n-p transistor has impurity concentrations of6*1018, 7 1015 and 9*1017 cm3 in the emitter, base and collector regions correspondingly. The corresponding carrier lifetimes are 10 10-7, and 106 s. The device cross-section area A-0.02 mm2, the emitter base junction is forward biased to 0.7V. Use diffusion coefficients DE-3cm2/s, DB-15 cm2/s, Dc-5cm%, and base with w=0.65 (a) Calculate emitter current using iEp.n-qADpPn p exp( )1 (b) Calculate current gain: (c) Estimate the device switching time (RC) assuming that resistance...
+20 V ID- 6 mA RG Figure 7-3 21) Refer to Figure 7-3. In this circuit, VGs is biased correctly for proper operation. This means 21) that VGS is negative. C) either negative or positive. D) positive. 22) Refer to Figure 7-3. Calculate the value of VDs 22) A) 0 V B)-2 V C) 2V D) 4V o-vs Vos + 20 V Cs キDj R1 Figure 9-3 23) Refer to Figure 9-3. The de voltage across RL was measured at...
-Summer 12018 10V 47 kQ 200 34) 34) Refer to the figure above. The minimum value of Ig that will produce saturation is A)1.064 HA D) 0.25 mA. B) 5.325 HA C)10.64 pA equals 35) 35) A transistor has a Poc of 250 and a base current, 1p, of 20 uA. The collector current, Ic D) 5 A. A) 5 mA. B) 50 mA. C) 500 uA 36) regions of operation 36) A bipolar junction transistor has B) 2 D)...
It Kind of goes without saying but if you have no knowledge than dont comment or try and answer this question you dope Questions 1-3 below are about the amplifier circuit of Figure 1. Here Vcc is a fixed voltage The base voltage vB(t) is time-varying, and is of the form vB(t) V(t) where VB is a DC offset, and vb(t) is a time-varying purely AC signal. Suppose the amplitude of vb is A. Assume that the capacitor C is...
I am POSTING question with solution please explain me how the solution is being solved please do it on paper please it is a humble request I AM posting my question 6TH TIME PLEASE tell me and explain me STEP by step what is happening in the question and how to solve it ON PAPER please explain the steps a. Using the characteristics of Fig., determine Bac at IB 60 mA and VCE z4 V b. Using the characteristics of...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os, is so large it may be neglected. 0) Calculate the open circuit voltage gain Av Yout/ Vis. i) The amplifier has a load of 10 k2. Determine the current gain Va. = 12 V 150k 4k3 Vout Vin 200k GND = 0 V Figure 4b a) State the name...