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Design the circuit in Fig. P.5...
*5. Design a BJT transistor drive circuit like the one shown Figure 10-7 (Hart's text) with an in...
*5. Design a BJT transistor drive circuit like the one shown Figure 10-7 (Hart's text) with an initial peak base current, IB,-8 1B2, where 1B2 denotes the minimum base current required to drive the transistor to saturation. Assume a collector load resistance, Rc-8 Ω, collector supply voltage Vs = 30 V, large signal current of the transistor, hFE-min. 10, max. 20), VBE(on)-0.8 V, and the input is periodic pulse waveform (0 to 6) V, with a duty cycle, D-0.5. Also,...
6.5 BI C2 Cl sig in 0 Design the bias circuit of the CE amplifier shown...
6.5 BI C2 Cl sig in 0 Design the bias circuit of the CE amplifier shown to obtain IE= 0.5 mA and Vc= +6 V. Design for a dc voltage at the base of 5 V and a current through RB2 of 50 μΑ. Let Vcc-+15 V, β-100, and VBE 0.7 V. a) Specify the values of RBi, RB2, RE, and Rc b) Also give the values of the BJT small-signal parameters gm, rr , and ro at the bias...
*5. Design a BJT transistor drive circuit like the one shown Figure 10-7 (Hart's text) with...
*5. Design a BJT transistor drive circuit like the one shown Figure 10-7 (Hart's text) with an initial peak base current, IB,-8 1B2, where 1B2 denotes the minimum base current required to drive the transistor to saturation. Assume a collector load resistance, Rc-8 Ω, collector supply voltage Vs = 30 V, large signal current of the transistor, hFE-min. 10, max. 20), VBE(on)-0.8 V, and the input is periodic pulse waveform (0 to 6) V, with a duty cycle, D-0.5. Also,...
Electronics1. It's a multiple choices question. use the formula sheet if needed (the last picture). Question...
Electronics1. It's a multiple choices question. use the formula
sheet if needed (the last picture).
Question 1 CIRCUIT A.1 (2.5 Marks) +Vec R RC clic Vc Fig. 1: CIRCUIT A.1 Statement: Sketching relevant output (V-le) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.1 (denoting the type Circuit A1). Assume the following: Voe= 12 volt: Rc = 3.6k; R = 500k and a =0.9. Required Solutions From the...
EXERCISES 8.12 For the circuit in Fig. 8. 19, let 1-1 m1A, Vcc-15 VR-|0 kQ, with α 1, and let the...
EXERCISES 8.12 For the circuit in Fig. 8. 19, let 1-1 m1A, Vcc-15 VR-|0 kQ, with α 1, and let the input voltages be: t'ai = 5 + 0.005 sin 2π × 1000t. volts, and = 5-0.005 sin 2π × 10001, volts. (a) If the BJTs are specified to have gr of 0.7 V at a collector current of 1 mA. find the voltage at the emitters. (b) Find g, for each of the two transistors. (c) Find ic for...
FIND THE VALUES OF Rb1, Rb2, Re,Rc, rin , rout, overall gain and open circuit gain First, design a common emitter BJT a...
FIND THE VALUES OF Rb1, Rb2, Re,Rc, rin , rout, overall gain and
open circuit gain
First, design a common emitter BJT amplifier Second, analyze the amplifier.( Avo, Gv, Rin, Rout) Third, compare your calculation with Multisim. Report must include comparison between your calculation & simulation results overall voltage gain, open circuit voltage gain, input resistance, and output resistance. This design project is not group work, must be done individually. Type your report. Design a discrete common emitter BJT amplifier.(Determine...
D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design...
D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit to establish a de emitter current of I mA and provide the highest possible voltage gain while allowing for a signal swing at the collector of ±2 V. Use + 10-V and-5-V power supplies. Cc Rc UC RB RE
Q. 3. Design a transistor biasing circuit as shown below. Assume B = 100, Ica =...
Q. 3. Design a transistor biasing circuit as shown below. Assume B = 100, Ica = 10 mA, VE = Vcc/3, VceQ = Vcc /3 and VBE = 0.7 V. RTH = 0.1 (1 + B)RE . Also find the power rating of all resistors. (25) > +15V R2 Rc Vio R1 RE
Q. 3. Design a transistor biasing circuit as shown below. Assume ß = 100, lco =...
Q. 3. Design a transistor biasing circuit as shown below. Assume ß = 100, lco = 10 mA, VE = Vcc/3, VCEQ = Vcc/3 and VBE = 0.7 V. RTH = 0.1 (1 + B)RE . Also find the power rating of all resistors. +15V R2 Rc V10 R1 RE
Design a transistor biasing circuit as shown below. Assume ß = 100, Ice = 10 mA,...
Design a transistor biasing circuit as shown below. Assume ß = 100, Ice = 10 mA, VE = Vcc/3, VCEQ = Vcc/3 and VBE = 0.7 V. RTH = 0.1 (1 + BRE. Also find the power rating of all resistors. +15V R2 Rc V 10 R1 RE
*5. Design a BJT transistor drive circuit like the one shown Figure 10-7 (Hart's text) with an initial peak base current, IB,-8 1B2, where 1B2 denotes the minimum base current required to drive the transistor to saturation. Assume a collector load resistance, Rc-8 Ω, collector supply voltage Vs = 30 V, large signal current of the transistor, hFE-min. 10, max. 20), VBE(on)-0.8 V, and the input is periodic pulse waveform (0 to 6) V, with a duty cycle, D-0.5. Also,...
6.5 BI C2 Cl sig in 0 Design the bias circuit of the CE amplifier shown to obtain IE= 0.5 mA and Vc= +6 V. Design for a dc voltage at the base of 5 V and a current through RB2 of 50 μΑ. Let Vcc-+15 V, β-100, and VBE 0.7 V. a) Specify the values of RBi, RB2, RE, and Rc b) Also give the values of the BJT small-signal parameters gm, rr , and ro at the bias...
*5. Design a BJT transistor drive circuit like the one shown Figure 10-7 (Hart's text) with an initial peak base current, IB,-8 1B2, where 1B2 denotes the minimum base current required to drive the transistor to saturation. Assume a collector load resistance, Rc-8 Ω, collector supply voltage Vs = 30 V, large signal current of the transistor, hFE-min. 10, max. 20), VBE(on)-0.8 V, and the input is periodic pulse waveform (0 to 6) V, with a duty cycle, D-0.5. Also,...
Electronics1. It's a multiple choices question. use the formula
sheet if needed (the last picture).
Question 1 CIRCUIT A.1 (2.5 Marks) +Vec R RC clic Vc Fig. 1: CIRCUIT A.1 Statement: Sketching relevant output (V-le) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.1 (denoting the type Circuit A1). Assume the following: Voe= 12 volt: Rc = 3.6k; R = 500k and a =0.9. Required Solutions From the...
EXERCISES 8.12 For the circuit in Fig. 8. 19, let 1-1 m1A, Vcc-15 VR-|0 kQ, with α 1, and let the input voltages be: t'ai = 5 + 0.005 sin 2π × 1000t. volts, and = 5-0.005 sin 2π × 10001, volts. (a) If the BJTs are specified to have gr of 0.7 V at a collector current of 1 mA. find the voltage at the emitters. (b) Find g, for each of the two transistors. (c) Find ic for...
FIND THE VALUES OF Rb1, Rb2, Re,Rc, rin , rout, overall gain and
open circuit gain
First, design a common emitter BJT amplifier Second, analyze the amplifier.( Avo, Gv, Rin, Rout) Third, compare your calculation with Multisim. Report must include comparison between your calculation & simulation results overall voltage gain, open circuit voltage gain, input resistance, and output resistance. This design project is not group work, must be done individually. Type your report. Design a discrete common emitter BJT amplifier.(Determine...
D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit to establish a de emitter current of I mA and provide the highest possible voltage gain while allowing for a signal swing at the collector of ±2 V. Use + 10-V and-5-V power supplies. Cc Rc UC RB RE
Q. 3. Design a transistor biasing circuit as shown below. Assume B = 100, Ica = 10 mA, VE = Vcc/3, VceQ = Vcc /3 and VBE = 0.7 V. RTH = 0.1 (1 + B)RE . Also find the power rating of all resistors. (25) > +15V R2 Rc Vio R1 RE
Q. 3. Design a transistor biasing circuit as shown below. Assume ß = 100, lco = 10 mA, VE = Vcc/3, VCEQ = Vcc/3 and VBE = 0.7 V. RTH = 0.1 (1 + B)RE . Also find the power rating of all resistors. +15V R2 Rc V10 R1 RE
Design a transistor biasing circuit as shown below. Assume ß = 100, Ice = 10 mA, VE = Vcc/3, VCEQ = Vcc/3 and VBE = 0.7 V. RTH = 0.1 (1 + BRE. Also find the power rating of all resistors. +15V R2 Rc V 10 R1 RE
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