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P and N type semiconductors are formed with an acceptor and donor concentration of 1×1017 cm-3 and 1×1016 cm-3 , respectively, intrinsic carrier concentration is 1×1010 cm-3 and relative permittivity (єs ) is 12є0 @ 300K. Given, permittivity of free space (є0 ) 8.85 × 10-12 Farad/meter, KT @ 300K 0.0259 eV, q = 1.602 × 10-19 coulombs

2. Majority and Minority Electron density (in cm-3 ) & Hole density (in cm-3 ) under equilibrium 

B. Draw the following profiles @ 300K 

3. Energy-band Vs Lateral distance (clearly indicate Ec , Ev , Eo , EF and Ei ) 

(i) under equilibrium (ii) under 0.5 V applied forward bias (iii) under -0.5 V applied reverse bias 

4. Electron density & Hole density (in Log scale) Vs Lateral distance under equilibrium (clearly indicate majority and minority concentration) 

5. Space Charge Density & Electric Field Vs Lateral distance under equilibrium (clearly indicate maximum electric) 

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Answer #1

And I NA=1016 cm3 1015 um 3 NO ni = 1010 cm 3 Es = 1260 (1) Vai Viln (NAND) 0.026xIn 1031 1०२० 2x1260 W= q Vai 0.650 V = V 24Dear student as per HOMEWORKLIB POLICY we are allowed to do first question only. Hope this solution helps you. For any query please feel free to ask in comment box. Please don't forget to give thumbs up thank you

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