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P and N type semiconductors are formed with an acceptor and donor concentration of 1×1017 cm-3 and 1×1016 cm-3 , respectively, intrinsic carrier concentration is 1×1010 cm-3 and relative permittivity (єs ) is 12є0 @ 300K. Given, permittivity of free space (є0 ) 8.85 × 10-12 Farad/meter, KT @ 300K 0.0259 eV, q = 1.602 × 10-19 coulombs A. Calculate the following quantities @ 300K 1. Potential Drop (in V) and Maximum Electric Field (in V/cm) across PN-junction [2 + 2 + 2] (i) under equilibrium (ii) under 0.5 V applied forward bias (iii) under -0.5 V applied reverse bias 2. Majority and Minority Electron density (in cm-3 ) & Hole density (in cm-3 ) under equilibrium [1 + 1] B. Draw the following profiles @ 300K 3. Energy-band Vs Lateral distance (clearly indicate Ec , Ev , Eo , EF and Ei ) [4 + 3 + 3] (i) under equilibrium (ii) under 0.5 V applied forward bias (iii) under -0.5 V applied reverse bias 4. Electron density & Hole density (in Log scale) Vs Lateral distance under equilibrium (clearly indicate majority and minority concentration) [2 + 2 + 2] 5. Space Charge Density & Electric Field Vs Lateral distance under equilibrium (clearly indicate maximum electric) [2 + 2 + 2]

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And I NA=1016 cm3 1015 um 3 NO ni = 1010 cm 3 Es = 1260 (1) Vai Viln (NAND) 0.026xIn 1031 1०२० 2x1260 W= q Vai 0.650 V = V 24

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