Photodiode Detectors
A silicon APD has a responsivity of 20 A/W at the detection wavelength of 850 nm, and the absorption efficiency is 0.7. Determine the avalanche gain.
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Photodiode Detectors
A silicon photodiode is configured as shown in Fig. 14-18 with a 90 V bias voltage. The light to be detected has intensity 20 _W/cm2 and wavelength 920 nm. Relevant material properties for the detector are: absorption efficiency = 0.18, dark current density at room temperature = 15 nA/cm2, charge carrier mobility = 0.048 m2/Vs, and carrier saturation velocity = 105 m/s. At the applied bias voltage, it is known that the width of the depletion region is 0.2 mm....
Problem 3 (25 points) A silicon photodetector has an internal photo responsivity of 0.5 A/Wt wavelength of 850 nm. When photons of wavelength 850 nm are incident normally on this photodetector, so...
Problem 3 (25 points) A silicon photodetector has an internal photo responsivity of 0.5 A/Wt wavelength of 850 nm. When photons of wavelength 850 nm are incident normally on this photodetector, some photons are reflected back and some photons penetrate to the detection region and are absorbed by the photodetector. (a) The index of refraction of silicon is 3.45. If the electric current measured by this photodetector is 20 mA, what is the incident optical power? (b) Silicon has a...
Photodiode Detectors
A high-speed germanium PIN photodiode has a depletion width of 10 _m and a reverse-bias voltage of 10 V. The hole mobility in Ge is _ 0.2 m2/(Vs), the saturation velocity is _ 7 × 104 m/s, and the refractive index at 1300 nm is _ 4.3. (a) Determine the transit time limit to the response time, and calculate the corresponding 3 dB electrical bandwidth. (b) If light of wavelength 1300 nm is detected, determine the fraction of incident light...
Photodiode Detectors
A silicon solar cell has area 50 cm2, reverse-saturation current 0.75 _A, _ = 2. The electrical power generated in the 0.4 _ load resistor is 894 mW. Determine (a) The circuit current i, (b) the photocurrent i_, (c) the optical power incident on the cell, assuming that 80% is absorbed, and (d) the optical-to-electrical conversion efficiency of the cell. Assume the temperature remains near 300 K. Assume _ = 500 nm for the incident light.
Photodiode Detectors
14.1 A photodiode with responsivity 0.3 A/W and dark current 2 nA is biased in the photoconductive mode, with a 9 V battery and 500 k_ resistor. Make a sketch like that of Fig. 14-3, showing the load line and the diode curves for incident powers from zero to 100 _W in steps of 20 _W. Circle the operating point for an incident power of 40 _W, and determine the approximate diode voltage from the graph.
Question 3: (8 points) (a) A photodetector has an effective area of 6x102 cm. It is...
Question 3: (8 points) (a) A photodetector has an effective area of 6x102 cm. It is illuminated with 700nm laser light that has an intensity of 2.5mW/cm². Assuming each three photons generate one electron-hole pair on average, calculate the generated photocurrent. (b) A 40 nW optical power at 1555 nm is incident on APD. The APD has refractive index of 3.5, and its multiplication factor is 12. It is efficiency without avalanche breakdown is 80%. Find: a) The responsivity of...
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A photodetector has a responsivity of 0.844 A/W at 1500 nm. (a) Determine thequantum efficiency. (b) Determine the responsivity for incident wavelengths 1300and 800 nm.
Photodiode Detectors
A silicon p–n junction photodiode has junction area 1 cm2, and doping levels 1014 and 1016 cm–3 on the n and p sides, respectively. It is reverse biased with 15 V and a 10 k_ load resistor is used. (a) Determine the 3 dB electrical bandwidth due to the RC time constant. (b) Determine the bandwidth due to the hole transit time. (c) What is the limiting bandwidth in this case?
A Si photodiode with a 1 mm^2 area has a dark current i_drk = 0.5 nA...
A Si photodiode with a 1 mm^2 area has a dark current i_drk = 0.5 nA and a responsivity, R = 0.2 A/W at 500 nm. It is operated with (reverse) bias. Assume B_3dB = 10 Hz electrical bandwidth and 500 nm monochromatic light. Do NOT include amplifier Johnson noise. (a) What is its quantum efficiency, ηqe? (b) What is its dark current noise? (c) What is the photon equivalent of the dark current noise? (d) What is the noise...
Q.14 a) i A silicon p-i-n photodiode incorporated into an optical receiver has a quantum efficiency...
Q.14 a) i A silicon p-i-n photodiode incorporated into an optical receiver has a quantum efficiency of 60 % at a wavelength of 0.9 um The dark current is 3 nA and load resistance is 4 Kn. The incident optical power is 200 nw and the receiver bandwidth is 5 MHz. Determine 1) Mean square quantum noise current, 2) Mean square dark current and 3) Mean square thermal nosie current at a temperature of 20 °C [8]
Q.14 a) i...
Problem 3 (25 points) A silicon photodetector has an internal photo responsivity of 0.5 A/Wt wavelength of 850 nm. When photons of wavelength 850 nm are incident normally on this photodetector, some photons are reflected back and some photons penetrate to the detection region and are absorbed by the photodetector. (a) The index of refraction of silicon is 3.45. If the electric current measured by this photodetector is 20 mA, what is the incident optical power? (b) Silicon has a...
Question 3: (8 points) (a) A photodetector has an effective area of 6x102 cm. It is illuminated with 700nm laser light that has an intensity of 2.5mW/cm². Assuming each three photons generate one electron-hole pair on average, calculate the generated photocurrent. (b) A 40 nW optical power at 1555 nm is incident on APD. The APD has refractive index of 3.5, and its multiplication factor is 12. It is efficiency without avalanche breakdown is 80%. Find: a) The responsivity of...
Q.14 a) i A silicon p-i-n photodiode incorporated into an optical receiver has a quantum efficiency of 60 % at a wavelength of 0.9 um The dark current is 3 nA and load resistance is 4 Kn. The incident optical power is 200 nw and the receiver bandwidth is 5 MHz. Determine 1) Mean square quantum noise current, 2) Mean square dark current and 3) Mean square thermal nosie current at a temperature of 20 °C [8]
Q.14 a) i...
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