consider a region of silicon at 300k where the carrier concentrations are: n(x)=2x10^17 cm^-3 p(x)=A(x-xL)^2 cm^-3...
consider a region of silicon at 300k where the carrier
concentrations are:
n(x)=2x10^17 cm^-3
p(x)=A(x-xL)^2 cm^-3
where A= 1x10^22 cm^-5 and xL= 10 um
it is known that the current density J is equal to 50 A/cm^2. the
material parameters are under =1350, Dn=35, up=480, Dp=12.4 in
units of cm^2/V-s and cm^2/s.
you may neglect hole drift current in your approx analysis.
a. jp(x)
b. jn(x)
c. E(x)
Homework Answers
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consider a region of silicon at 300k where the carrier
concentrations are:
n(x)=2x10^17 cm^-3
p(x)=A(x-xL)^2 cm^-3...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and =...
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and = 480 cm2 Nis: a. Find the resistivity p of the silicon. b. If the silicon is now doped with 101/cm-of B (Boron), find the majority and minority carrier concentrations. What is the density of fixed charge in the material (immobile ions)? C. What type of material is this (n type or p type)? d. What is the majority carrier (hole or electron)? e. Find...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Applied quantum mechanics 1. Calculate the carrier concentrations (p and n) for Si at 300k for...
Applied quantum mechanics
1. Calculate the carrier concentrations (p and n) for Si at
300k for the following doping concentrations:
2.
(a) ND = 1015/cm3
(b) NA = 1018/cm3
(c) ND = 5 x 1017/cm3
Calculate the majority and minority carriers for each side of
an N+P junction if ND = 2 x 1017/cm3 for the n-side, and NA =
1014/cm3 for the p-side.
Assume the semiconductor is Si and the temperature is
300K.
3. Determine the energy of:
(a)...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measur...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measured in um and is limited to 0 SxS 25 um (also 18 has a unit of um). The electron diffusion coefficient is D.-25 cm2/sec and the electron mobility is -960 cm2/V-sec. The total electron current density through the semiconductor is constant and equal to J- 40 A/cm2. The electron current has both diffusion and drift current components. Determine...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
2. Uniform, steady-state ultraviolet radiation impinges on the surface of a semi-infinite silicon sample in which n-1014 cm3, producing an excess-carrier density at the surface p(0)(0 1011 cm3. Given...
2. Uniform, steady-state ultraviolet radiation impinges on the surface of a semi-infinite silicon sample in which n-1014 cm3, producing an excess-carrier density at the surface p(0)(0 1011 cm3. Given further that τ-lụs, and that the spatial origin is at the irradiated surface. (a) Calculate the hole and electron diffusion currents at the surface (i.c.x-0) and at x -L (b) Since the sample is open-circuited, the total current density at x L must be zero. That is, the carrier distributions must...
Need help solving this questions. In problems 1-3, Assume n- 100 cm, E1 eV, 1000 cm-/V.s,...
Need help solving this questions.
In problems 1-3, Assume n- 100 cm, E1 eV, 1000 cm-/V.s, g.-12, s,-8.85% 10-14 Fern, and KT4-26-my 250 cma/V.s, Problem 1 A silicon sampl equilibrium has electron concentration given asn -e0'x+2305, where x is distance. Determine the (a) position of the Fermi level with respect to the conduction band, Ee, at x-1-um, (b) electron diffusion current density at x-1- m, and (c) sample conductivity at x-0 Problem 2 Consider a silicon PN-junction with acceptor and...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and = 480 cm2 Nis: a. Find the resistivity p of the silicon. b. If the silicon is now doped with 101/cm-of B (Boron), find the majority and minority carrier concentrations. What is the density of fixed charge in the material (immobile ions)? C. What type of material is this (n type or p type)? d. What is the majority carrier (hole or electron)? e. Find...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Applied quantum mechanics
1. Calculate the carrier concentrations (p and n) for Si at
300k for the following doping concentrations:
2.
(a) ND = 1015/cm3
(b) NA = 1018/cm3
(c) ND = 5 x 1017/cm3
Calculate the majority and minority carriers for each side of
an N+P junction if ND = 2 x 1017/cm3 for the n-side, and NA =
1014/cm3 for the p-side.
Assume the semiconductor is Si and the temperature is
300K.
3. Determine the energy of:
(a)...
P5. The electron concentration in silicon at T 300°K is given by n (x) = 1016 exp (-x/18)/cm' where x is measured in um and is limited to 0 SxS 25 um (also 18 has a unit of um). The electron diffusion coefficient is D.-25 cm2/sec and the electron mobility is -960 cm2/V-sec. The total electron current density through the semiconductor is constant and equal to J- 40 A/cm2. The electron current has both diffusion and drift current components. Determine...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
2. Uniform, steady-state ultraviolet radiation impinges on the surface of a semi-infinite silicon sample in which n-1014 cm3, producing an excess-carrier density at the surface p(0)(0 1011 cm3. Given further that τ-lụs, and that the spatial origin is at the irradiated surface. (a) Calculate the hole and electron diffusion currents at the surface (i.c.x-0) and at x -L (b) Since the sample is open-circuited, the total current density at x L must be zero. That is, the carrier distributions must...
Need help solving this questions.
In problems 1-3, Assume n- 100 cm, E1 eV, 1000 cm-/V.s, g.-12, s,-8.85% 10-14 Fern, and KT4-26-my 250 cma/V.s, Problem 1 A silicon sampl equilibrium has electron concentration given asn -e0'x+2305, where x is distance. Determine the (a) position of the Fermi level with respect to the conduction band, Ee, at x-1-um, (b) electron diffusion current density at x-1- m, and (c) sample conductivity at x-0 Problem 2 Consider a silicon PN-junction with acceptor and...
Consider a bar of p-type silicon that is uniformly doped to a value of N, 2 x 10 cm at T- 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at-O is op(0) on(0) 2 x 10 cm-. Assume the following Light p type pa .-1200 cm 2 /V-s, μ,-400 cm2 /V-s. To = 10-6 s, and T.-SX...
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