3. .) In the circuit below, k, = 1 mA/V2, Vt = 1V, VDD = 11V, RL = 1 kΩ a.) Show that the transistor is in Cut off when S1 is connected to A. b.) Show that the transistor is in Ohmic Mode when S1 is connected to B and find RDS, ID, VSD, and Vo 싱, S1 0 80 Vo RL ウ 3. .) In the circuit below, k, = 1 mA/V2, Vt = 1V, VDD = 11V,...
Q3) Design the circuit of that is, determine the values of RD and RS so that the transistor operates at ID = 0.4 mA and Vp=+0.5 V. The NMOS transistor has V = 0.7 V, H, Cox= 100 A/V2, L = 1 pm, and W = 32 m. Neglect the channel-length modulation effect (i.e., assume that I = 0). Vpp = +2.5 V Z RO V--25 V
please help with the LT SPICE for this nmos transistor analysis problem. I figured out the calculations, I just need help verifying them with LT SPICE. thank you! Analyze the following MOSFET circuit for dc bias. Solve for ID, VGs and VDs Use RD-5 kQ, Rs-5 kQ, RG,-1 ΜΩ and RG2-1 MS2. Use a power supply with VDD-| 2 V and K.-I mA/V2 and Vin-1 V. RG RD RG2 Rs Verify the analysis of the circuit of Prob. 5 by...
The MOS amplifier circuit below has Kn = 1.9 mA/V2 , ID = 0.4 mA and and λ = 0. a- Calculate the transconductance of this MOSFET. b- Find the voltage gain of this amplifier. 9V 5 kΩ 8. Ο υο 2 ΚΩ Μ || Ο, Ο 10 ΚΩ -9 V
Part IIl: Diodes The Ideal-Diode Model a) For the circuit below, find ID and VD for the case VDD 5 V and R 10 k2. Assume that the diode has a voltage of 0.7 V at 1-mA current. Use (a) iteration and (b) the constant-voltage-drop model with VD 0.7 V 홍Yo b) Design the circuit below to provide an output voltage of 2.4 V. Assume that the diodes available have 0.7-V drop at 1 mA. +10 V Vo Part IIl:...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
For the circuit below, NEED HELP ASAP 5. For the amplifier circuit below, i. Find the values for Rs and RD such that ID 2mA and VD SV. Use VDD=10V, Vtn-IV, and kn-1 mA/V2. Rsig = 50Ω. ii. If VA-o, draw the small signal model of the amplifier. iii. Calculate the gm of the MOSFET. iv. Calculate the small signal voltage gain (Vos) VDD 10V 6ΜΩ ID Co SI 4ΜΩ
In the circuit shown in Figure P11.11, the MOSFET operates in the active region, for iD = 0.5 mA and vD = 3 V. This enhancement-type PMOS has VT =−1 V,k = 0.5 mA/V2. Find a. RD. b. The largest allowable value of RD for the MOSFET to remain in the saturation region. ip VDS VDD10 V VGS R2 Rp Figure P11.11 ww ip VDS VDD10 V VGS R2 Rp Figure P11.11 ww
Problem 2 In the CS amplifier circuit below, the input signal vois coupled to the gate through a very large capacitor (shown as infinite). The transistor source is connected to ground at signal frequencies via a very large capacitor. The output voltage signal that develops at the drain is coupled to a load resistance via a very large capacitor a) If the transistor has V, = 1 V, and k',W/L = 2 mA/V2, find VGS, ID, and VD- b) Find...
URGENT The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...