Question

Hi I need help with question 3 shown below. Thank you

3) The p-n junction of problem 2 has a cross sectional area of 103 cm2. Calculate: a) the total depletion zone width, b)n-side depletion zone width, c) p-side depletion zone width, d) total charge on the n side, e) total charge on the p side and f) the peak electric field magnitude. g) Sketch εχ vs. x and the charge density to scale across the depletion zone as in Fig. 3-6.

This problem references problem 2, which I have already completed

0 0
Add a comment Improve this question Transcribed image text
Answer #1

To-시 deplehon 2one width Con cenhaton onP- Side l- 3 10 cm 21 10m depn cencant ation on 1구 -3 - 23 21 23 r-5 x10 2.3 constant (si) 2117 1:6x1619 im) widih inneon o m 2 1 (10 10 c) DepleHon width in P 23 1 0 C1oo iHin duptation ruon f n-sida -p23 C scage i thin duplehon nugion imP-cias i thin dsple Hon rion P 21 -6 4) En side, magu 19 23 p-Side n-Side charge ders,ha P-sid e าง Eo En

Add a comment
Know the answer?
Add Answer to:
Hi I need help with question 3 shown below. Thank you This problem references problem 2,...
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Not the answer you're looking for? Ask your own homework help question. Our experts will answer your question WITHIN MINUTES for Free.
Similar Homework Help Questions
  • 1. (2) A Si p-n junction has sides with boron doping at 107 cm and phosphorus...

    1. (2) A Si p-n junction has sides with boron doping at 107 cm and phosphorus doping at 5.0x10^? cm? The junction has a cross-sectional area of 104 cm. It is in equilibrium at a temperature of 300 K. For Si, the intrinsic charge carrier density is 1.5x100 cm and the dielectric constant is 11.8. State the contact potential, the total depletion region width, the depletion region widths on the p-side and n- side, and the peak electric field. What...

  • Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in...

    XXX is 467 Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...

  • ***PLEASE NOTE: I have already calculated the potential and need help with Electric Field and induced...

    ***PLEASE NOTE: I have already calculated the potential and need help with Electric Field and induced charge at the boundaries for this problem*** An infinitely long rectangular metal pipe (sides and ) is grounded, but one end, at x = 0, is maintained at a specified potential , as indicated in Fig. 3.22. What is the ELECTRIC FIELD and INDUCED CHARGE on all boundaries? I have already worked you the potential, and got: We were unable to transcribe this imageWe...

  • need help answering 3 and 4. I posted the answers for 1 and 2 right below...

    need help answering 3 and 4. I posted the answers for 1 and 2 right below this problem. Below that is an example problem showing how i need number 3 and 4 formatted. the actual problem i need solved is different from the example problem in that the left side has a wall, so there is a moment, and there is compression instead of tension. 0005n app > VopP = 10,000 lb L, . Diaw a global re 75 112...

  • 4.15 A PN diode with lengths much larger than the carrier diffusion length such as shown...

    4.15 A PN diode with lengths much larger than the carrier diffusion length such as shown in Fig. 4-18 is called a long-base diode. A short-base diode has lengths much shorter than the diffusion lengths, and its excess carrier concentration is similar to that shown in Fig. 8-6. A uniformly doped short-base Si diode has Nd- 101cm-3and Na 1016cm3. tp n1 us, Dp 10 cms, Dn 30 cm-s, and cross-sectional area10 cm. The length of the quasi-neutral N-type and P-type...

  • Wdep P-Type N -Type Q1. Consider the PN junction at equilibrium shown in the figure above....

    Wdep P-Type N -Type Q1. Consider the PN junction at equilibrium shown in the figure above. Both N-side and P-side has same doping density NA ND 1017 /cm3. Assume both electron and hole mobility to be same, i.e Me - 1000cm2/Vs. a equilibrium energy band diagram. Find (EF Et at(i)x-0. (ii) x »xn (iii) X <K_Xp Find the value of built-in voltage and total depletion width (5+5 points) Find electron and hole densities at (i) x = 0. (ii) x...

  • Hi, I need help with this linear algebra problem. Thank you! Let A = 0.7 0.1...

    Hi, I need help with this linear algebra problem. Thank you! Let A = 0.7 0.1 0.3 0.9 Find P and D such that A = PDP-1, where D is a diagonal matrix.

  • Hi, I need help with this question, thank you! A 10.00mL sample of 0.1000M an acid...

    Hi, I need help with this question, thank you! A 10.00mL sample of 0.1000M an acid (pKg) = 2.89; PK 2 = 5.51) was titated with 0.1526M NaOH. Sketch the graph of pH versus Vook for the titration of this acid through the addition of 25.00mL of NaOH. (3 points) Indicate the numerical pH values for the initial (i.e. before addition of NaOH), half-equivalence, and equivalence points; as well as the pH once the full 25.00ml NaOH has been added....

  • Hi I need help on this question, thank you :) Chech 1 Pearl Products Limited of...

    Hi I need help on this question, thank you :) Chech 1 Pearl Products Limited of Shenzhen, China, manufactures and distributes toys throughout South East Asia. Three cubic centimeters (cc) of solvent H300 are required to manufacture each unit of Supermix, one of the company's products. The company now is planning raw materials needs for the third quarter, the quarter in which peak sales of Supermix occur. To keep production and sales moving smoothly, the company has the following inventory...

  • Hi, I need help on my assignment for my discrete structures class. Thank you, and I...

    Hi, I need help on my assignment for my discrete structures class. Thank you, and I will remember to rate your answer! 3. Prove that n! > 2" for n 24 Prove that x, 1 is divisible by x-1 for x # 1. Note: we are doing the induction on n, not x. With the caveat that x is not 1, we want to show that x2 - 1 is divisible by x - 1, x'- 1 is divisible by...

ADVERTISEMENT
Free Homework Help App
Download From Google Play
Scan Your Homework
to Get Instant Free Answers
Need Online Homework Help?
Ask a Question
Get Answers For Free
Most questions answered within 3 hours.
ADVERTISEMENT
ADVERTISEMENT
ADVERTISEMENT