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2. Design the doping levels and dimensions of a silicon npn bipolar transistor such that the dc current gain is 320 and the Gummel Number is 10' cm². Assume that tm = 10-'s in the base, T, = 10-8 s in the emitter and T, = 10-s in the collector. Answer: xp = 500 nm, NB = 2x10 cm-> and xp = 1 um, Nae = 5.5x10 cm -3
Consider a silicon device (which happens to be an npn bipolar transistor) with an emitter doping of 10^17/cm3, a base doping of 8x10^15/cm3 and a collector doping of 2x10^15/cm3. Carefully calculate how the band diagram, charge density, electric field and electrostatic potential as a function of distance for this device changes from the equilibrium case when this bipolar transistor is properly biased to work as an amplifier. In other words, show how the band diagram changes when the emitter-base junction...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3 , base: p-type, NA=1015 cm-3, collector: N-type, ND=5x1015 cm-3 . 1. Draw the energy band diagram of the transistor at thermal equilibrium, 2. If the transistor is biased at Normal Active Mode, emitter-base junction forward biased with 1 V, and collector-base junction is reverse biased with 4V, draw the energy band diagram.
What are the differences between a (pnp) and a (npn) Bipolar Junction Transistor?
An NPN bipolar junction transistor (BJT) is used to turn on and off a 30 Ohm load using an Arduino digital output pin as shown. Assuming the transistor is on, in the saturation region, determine the power delivered to the 30 Ohm load. The voltage drop across the collector-emitter junction of the transistor is 0.2 Volts. +5 v 1308 ARDUINO SV UNO mne гоо са Vce=0.2 v Saturation VBE = 0.7V in active & Saturation regions
question 3 and 4
Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
2. A silicon n'-p-n bipolar transistor has abrupt dopings of 1019, 3x1016, and 5x105 cm in the emitter, base, and collector, respectively. Find the upper limit of the base-collector voltage at which the emitter bias can no longer control the collector current (due to punch- through or avalanche breakdown). Assume the base width (between metallurgical junc- tions) is 0.5 um.