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QUESTION 3 If a P+N diode has 7 mA of forward current, hole minority carrier lifetime...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
QUESTION 3 What current in microamps do we get with an ideal abrupt junction silicon diode...
QUESTION 3 What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)M2 area and doped with acceptors at 6.9 1015/cc, 1000 times more donor doping, and forward bias of 0.52 V. Assume e- & e+ mobilities of 1500 & 500 cmA2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt-0.02585V, Answer should be to two significant digits with fixed point notation.
Design an abrupt Si p+-n junction diode that has a reverse breakdown voltage of 130 V and has a forward-bias current of 2.2 mA at V = 0.7 volt. Assume tp = l0^-7 s.
Design an abrupt Sip+-n junction diode that has a reverse breakdown voltage of 130 V andhas a forward-bias current of 2.2 mA at V = 0.7 volt. Assume tp = l0^-7 s.
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that at N 10" the semiconductor is on the edge of degeneracy, but we can assume that non-degenerate carrier statistics are close enough for this problem.) Answer the following questions assuming room temperature. Assume that the minority electron and hole lifetimes are τ.-, 10's. The lengths of the N and P regions are L = 500 μm and 1. >> x,,x . a) Find the...
3. An ideal Si pn junction at 300 K is under forward bias. The minority carrier...
3. An ideal Si pn junction at 300 K is under forward bias. The minority carrier life times are 10* and 107 s for electrons and holes. The doping concentration in the n-region is ND-10° cmPlot the ratio of hole current to the total current crossing the space charge region as the p-region doping concentration (NA varies over the range 1014 to 1018 cnm Use a log scale for the doping concentrations.[use Fig.3.5(a) on P80 for mobility values) 163 cm....
Parts A,B, and C (All if possible). "Code" could just be the set of equations plugged...
Parts A,B, and C (All if possible). "Code" could just be the set
of equations plugged into a graphing program (such as Desmos).
For the following problems, assume: The cross-sectional area is 250 um x 250 um. The minority carrier lifetime on the p-side is 100 ns. • The minority carrier lifetime on the n-side is 10 us. 3. Consider a GaN p-n junction with NA = 1018 cm-3 and No = 1017 cm3. a. What is the reverse saturation...
Tutorial 2 The data sheet of a certain P-N junction diode specifies a leakage current of...
Tutorial 2 The data sheet of a certain P-N junction diode specifies a leakage current of 0.25mA at room temperature of 25[]C and 0.05 mA at 100[c. The diode has forward biased constant current of 30A at room temperature. If forward biased current is assumed to remain constant at all temperatures. Calculate the junction internal barrier voltage at room temperature and at 1000C. take 1=1 The data sheet for a silicon diode specifies a forward voltage drop of 2.35V for...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
QUESTION 3 What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)M2 area and doped with acceptors at 6.9 1015/cc, 1000 times more donor doping, and forward bias of 0.52 V. Assume e- & e+ mobilities of 1500 & 500 cmA2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt-0.02585V, Answer should be to two significant digits with fixed point notation.
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
Problem 7: A silicon diode is asymmetrically doped at ND-10', cm? and N-1016 cm'. (Note that at N 10" the semiconductor is on the edge of degeneracy, but we can assume that non-degenerate carrier statistics are close enough for this problem.) Answer the following questions assuming room temperature. Assume that the minority electron and hole lifetimes are τ.-, 10's. The lengths of the N and P regions are L = 500 μm and 1. >> x,,x . a) Find the...
3. An ideal Si pn junction at 300 K is under forward bias. The minority carrier life times are 10* and 107 s for electrons and holes. The doping concentration in the n-region is ND-10° cmPlot the ratio of hole current to the total current crossing the space charge region as the p-region doping concentration (NA varies over the range 1014 to 1018 cnm Use a log scale for the doping concentrations.[use Fig.3.5(a) on P80 for mobility values) 163 cm....
Parts A,B, and C (All if possible). "Code" could just be the set
of equations plugged into a graphing program (such as Desmos).
For the following problems, assume: The cross-sectional area is 250 um x 250 um. The minority carrier lifetime on the p-side is 100 ns. • The minority carrier lifetime on the n-side is 10 us. 3. Consider a GaN p-n junction with NA = 1018 cm-3 and No = 1017 cm3. a. What is the reverse saturation...
Tutorial 2 The data sheet of a certain P-N junction diode specifies a leakage current of 0.25mA at room temperature of 25[]C and 0.05 mA at 100[c. The diode has forward biased constant current of 30A at room temperature. If forward biased current is assumed to remain constant at all temperatures. Calculate the junction internal barrier voltage at room temperature and at 1000C. take 1=1 The data sheet for a silicon diode specifies a forward voltage drop of 2.35V for...
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