1. (40 Points) Given the parameters listed model below and using a +/- 5V power supply,...
1.) 120 points] The parameters of n-channel enhancement MOSFET in the amplifier circuit below are: 2.042 mA/V2, İVMİ V: 2.4 V, Kn 150 V a) Find quiescent values: drain current İD, gate-to-source voltage UGS, and drain-to-source voltage UDS b.) Determine AC model parameters: gm and ro c.) Determine amplifier model parameters: Ri, Ro and Avo d.) Determine the output voltage vi across the load RL f 1 mVp
1.) [20 points] The parameters of n-channel enhancement MOSFET in the amplifier circuit below are Ve = 2.4 V, Kn = 2.042 mA/V2, 1VMI = 150 V a.) Find quiescent values: drain current ip, gate-to-source voltage vGs, and drain-to-source voltage vps b.) Determine AC model parameters: gm and ro c.) Determine amplifier model parameters: Ri, Ro and Avo d.) Determine the output voltage vi across the load Rl if vs- 1 mVp SRC
1.) 120 pointsl The parameters of n-channel enhancement MOSFET in the amplifier circuit below are: 2.042 mA/V2, 1 Val ½ 2.4 V, Kn 150 V a.) Find quiescent values: drain current i, gate-to-source voltage vGs, and drain-to-source voltage vDs b.) Determine AC model parameters: gm and ro c.) Determine amplifier model parameters: Ri, Ro and Avo d) Determine the output voltage Vl across the load RL ǐfv, 1 mYn +VDD GI〈 R ls R Mi RL 1.) 120 pointsl The...
Given the circuit below with the following parameters: - M1: Vt,n = 0.48 V, Un Cox = 90 UA/V2, W/L = 10 um/4 um, VdD+Vad 1 = 0.01 [1/V] - Supply voltage: Vpp = 3.3 V, vad = 10 mV > R a. Find the value of resistor R so that the bias current is 10uA. (Hint: Channel length modulation should be considered.) Ipi M1 Use the resistor value in (a) for the following calculations: b. What configuration (connection) M1...
Shown below is a single stage common emitter amplifier with a unipolar dc power supply using an 2N3904 NPN BJT as the active device. It is specified that V+ 40 V, C1 C2CE 100uF, Ro-7.5 k2, REi-5.1kS2, and Ri - 36k52. Design the circuit so that the dc collector current is 2 mA and the magnitude of the small-signal midband voltage gain is 32.3. For the design calculations assume that the base-to- emitter dc voltage drop is 0.65 V, the...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...
Q1,Q2 and Q3 plz help Question Consider the following inverter design problem: Given VpD 5V, k' 30uA/V , and Vo 1V, design a resistive-load inverter circuit with VoL 0.2V . Specifically, determine the (W/L) ratio of the driver transistor and the value of the load resistor RL that achieve the required VoL- (10 marks) Question 2 Consider a pseudo-nMOS NOR2 gate, with the following parameters: 1V., Vro,load -31V, y = 0.4V1/2, andl F|= 0.6V. The transistor Hn Cox =254A/V2, Vro,driver...