Calculate the static and dynamic resistance of a silicon diode at room temperature with n=1, given...
Calculate the static and dynamic resistance of a silicon diode at room temperature with n=1, given vD=0..7V and at a forward current of 4mA.
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Calculate the static and dynamic resistance of a silicon diode
at room temperature with n=1, given...
Tutorial 2 The data sheet of a certain P-N junction diode specifies a leakage current of...
Tutorial 2 The data sheet of a certain P-N junction diode specifies a leakage current of 0.25mA at room temperature of 25[]C and 0.05 mA at 100[c. The diode has forward biased constant current of 30A at room temperature. If forward biased current is assumed to remain constant at all temperatures. Calculate the junction internal barrier voltage at room temperature and at 1000C. take 1=1 The data sheet for a silicon diode specifies a forward voltage drop of 2.35V for...
1. Consider a 1N4001 silicon diode used as a temperature sensor.The 1N4001 has an n1.43 calculate...
1. Consider a 1N4001 silicon diode used as a temperature sensor.The 1N4001 has an n1.43 calculate the temperature measured for the following conditions 2. Consider a IN4007 silicon diode used as a temperature sensor. The IN4001 has an n-1.4, calculate the temperature measured for the following conditions: . VD2-0.629V @ ID2 2mA 3. Consider a IN4001 diode used as a temperature sensor. Calculate the value of n when the temperature measured is 37°C for the following conditions: . Vin =...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explai...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied...
A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a)...
A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a) What breakdown mechanism do you expect will be dominant in this device? Explain. b) Find the approximate breakdown voltage for this diode. c) Calculate the depletion width at the breakdown voltage. d) What is the maximum magnitude of the electric field in the depletion region at the breakdown voltage?
Using MULTISIM SIMULATION PLEASE!!! using multisim please Reversed Vascu Procedure II: Diode Characteristics: 1. Wire the...
Using MULTISIM SIMULATION PLEASE!!!
using multisim please
Reversed Vascu Procedure II: Diode Characteristics: 1. Wire the circuit shown in Figure B. 3300 LA Vs Vd = (0-15V) Figure B Diode Characteristics pote Mode is defined as The dy to the dio rent through 10 3. Now reverse the diode then adjust the DC supply as shown in Table 2, Record the corresponding current and diode voltage as in step 2. Table 2 Reversed Bias Diode Characteristics Vs (volt) Va la...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
DIODE CHARACTERISTICS Objective: The objective of this laboratory is to examine and plot the forward characteristics...
DIODE CHARACTERISTICS Objective: The objective of this laboratory is to examine and plot the forward characteristics curve of a p-n junction diode and become familiar with the characteristics of both the p-n junction diode and the light emitting diode (LED). Prelab: Answer the following on a separate sheet of paper. Show your work and box your answers 1. Review the data sheets for the IN4001 p-n junction diode and answer the following a) Determine the maximum forward current and the...
Sketch the atomic structure of copper and discuss why it is a good conductor and how its structure is different from that of germanium, silicon, and gallium arsenide.
.1. Sketch the atomic structure of copper and discuss why it is a good conductor and how its structure is different from that of germanium, silicon, and gallium arsenide. 2. Determine the thermal voltage for a diode at a temperature of 20°C. 3. Given a diode current of 6 mA, Vr= 26 mV, n= 1, and Is= 1 nA, find the applied voltage VD. 4. Compare the characteristics of a silicon and a germanium diode and determine which you would prefer to use...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
Tutorial 2 The data sheet of a certain P-N junction diode specifies a leakage current of 0.25mA at room temperature of 25[]C and 0.05 mA at 100[c. The diode has forward biased constant current of 30A at room temperature. If forward biased current is assumed to remain constant at all temperatures. Calculate the junction internal barrier voltage at room temperature and at 1000C. take 1=1 The data sheet for a silicon diode specifies a forward voltage drop of 2.35V for...
1. Consider a 1N4001 silicon diode used as a temperature sensor.The 1N4001 has an n1.43 calculate the temperature measured for the following conditions 2. Consider a IN4007 silicon diode used as a temperature sensor. The IN4001 has an n-1.4, calculate the temperature measured for the following conditions: . VD2-0.629V @ ID2 2mA 3. Consider a IN4001 diode used as a temperature sensor. Calculate the value of n when the temperature measured is 37°C for the following conditions: . Vin =...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied...
Using MULTISIM SIMULATION PLEASE!!!
using multisim please
Reversed Vascu Procedure II: Diode Characteristics: 1. Wire the circuit shown in Figure B. 3300 LA Vs Vd = (0-15V) Figure B Diode Characteristics pote Mode is defined as The dy to the dio rent through 10 3. Now reverse the diode then adjust the DC supply as shown in Table 2, Record the corresponding current and diode voltage as in step 2. Table 2 Reversed Bias Diode Characteristics Vs (volt) Va la...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
DIODE CHARACTERISTICS Objective: The objective of this laboratory is to examine and plot the forward characteristics curve of a p-n junction diode and become familiar with the characteristics of both the p-n junction diode and the light emitting diode (LED). Prelab: Answer the following on a separate sheet of paper. Show your work and box your answers 1. Review the data sheets for the IN4001 p-n junction diode and answer the following a) Determine the maximum forward current and the...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
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