2. Consider a IN4007 silicon diode used as a temperature sensor. The IN4001 has an n-1.4, calculate the temperature measured for the following conditions: . VD2-0.629V @ ID2 2mA
3. Consider a IN4001 diode used as a temperature sensor. Calculate the value of n when the temperature measured is 37°C for the following conditions: . Vin = 0.620V @ İDI-În A .VD 0.687V ID 4.5mA (5 significant figures) n- [2 marks] 4. Consider a 2N3904 transistor wired in a diode connected fashion to be used as a temperature sensor. The 2N3904 has an n-1.004, calculate the temperature measured for the following conditions . VBE i = 0.608V @ lcı = lınA . УВЕ-= 0.68SV @ lc,-12mA
For the question above calculate the power dissipated by the transistor for both the switched states. Comment (50 words) what effect this power dissipation can have on the temperature measurement being made. (5 significant figures) PimA (5 significant figures) P12mA [2 marks]
5. Calculate the resistance (in ohms) of a PRTD (PT-100) when heated to 142°C 100 100 Where α-0.00392 0/0/°С δ 1.49 0.11 (T
Homework Answers
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1. Consider a 1N4001 silicon diode used as a temperature sensor.The 1N4001 has an n1.43 calculate...
Calculate the static and dynamic resistance of a silicon diode at room temperature with n=1, given...
Calculate the static and dynamic resistance of a silicon diode at room temperature with n=1, given vD=0..7V and at a forward current of 4mA.
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type...
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explai...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied...
A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a)...
A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a) What breakdown mechanism do you expect will be dominant in this device? Explain. b) Find the approximate breakdown voltage for this diode. c) Calculate the depletion width at the breakdown voltage. d) What is the maximum magnitude of the electric field in the depletion region at the breakdown voltage?
Ctri Question 3 (20 Marks) Lab 1-Zener Circuits and Applications Theory: Zener diode is designed ...
Ctri Question 3 (20 Marks) Lab 1-Zener Circuits and Applications Theory: Zener diode is designed to operate in reverse conduction. Zener breakdown occurs at a precisely defined voltage, allowing the diode to be used as a voltage reference or clipper. While Zener diodes are usually operated in reverse conduction, they may also be operated in cutoff and forward conduction. There are two different effects that are used in "Zener diodes". The only practical difference is that the two types have...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
2. A diode can be used as a white noise generator. Calculate the magnitude of shot noise if 100 V is applied to a diode in series with a 10 Ω resistor when measured with an instrument that has a 1...
2. A diode can be used as a white noise generator. Calculate the magnitude of shot noise if 100 V is applied to a diode in series with a 10 Ω resistor when measured with an instrument that has a 100 kHz bandwidth. a. If the shot noise signal above is taken across the resistor and amplified by 105 calculate the shot noise at the amplifier output b.
2. A diode can be used as a white noise generator. Calculate...
Question 11 - M4 (16 marks) Consider the semiconductor materials Silicon (Si) and Germanium (Ge). Intrinsic Si has a ba...
Question 11 - M4 (16 marks) Consider the semiconductor materials Silicon (Si) and Germanium (Ge). Intrinsic Si has a bandgap of 1.11eV and Intrinsic Ge has a bandgap of 0.67eV. Extrinsic n-doped Ge can be made by adding a small amount of Antimony. 11.1) (5 marks) On a single plot of the 'number of charge carriers' on the y-axis versus 'temperature' on the x-axis, plot the temperature dependence of the number of charge carriers for Intrinsic Si, Intrinsic Ge and...
consider a silicon pn junction diode at 300 K with nd= na = 10^16 cm-3, u_n 1350 cm^2/v-s, u_p 480 cm^2/v-s, and t_no = t_po= 5×10^-7 s. consider two bias conditions: i) a reverse bias of 1.0 v ii) a...
consider a silicon pn junction diode at 300 K with nd= na = 10^16 cm-3, u_n 1350 cm^2/v-s, u_p 480 cm^2/v-s, and t_no = t_po= 5×10^-7 s. consider two bias conditions: i) a reverse bias of 1.0 v ii) a forward bias of 0.2 v a) for each bus condition, roughly sketch the band gap diagram - accurately label the energy gap in eV - indicate the difference between E_f on the two sides id the junction and label its...
Problem #1 A large warehouse has five temperature sensors located in five different places. Each ...
Problem #1 A large warehouse has five temperature sensors located in five different places. Each sensor circuit is indicated as the figure below, where a DC current source circulates through a temperature-variable- resistance. Tk is the temperature in Celsius at the sensor in a given location; Tref is the reference temperature that each sensor has been calibrated. Assume for this problem that Tref 27 °C. Therefore, each sensor will provide a positive-voltage for temperatures greater than the reference, on the...
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied...
Ctri Question 3 (20 Marks) Lab 1-Zener Circuits and Applications Theory: Zener diode is designed to operate in reverse conduction. Zener breakdown occurs at a precisely defined voltage, allowing the diode to be used as a voltage reference or clipper. While Zener diodes are usually operated in reverse conduction, they may also be operated in cutoff and forward conduction. There are two different effects that are used in "Zener diodes". The only practical difference is that the two types have...
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
2. A diode can be used as a white noise generator. Calculate the magnitude of shot noise if 100 V is applied to a diode in series with a 10 Ω resistor when measured with an instrument that has a 100 kHz bandwidth. a. If the shot noise signal above is taken across the resistor and amplified by 105 calculate the shot noise at the amplifier output b.
2. A diode can be used as a white noise generator. Calculate...
Question 11 - M4 (16 marks) Consider the semiconductor materials Silicon (Si) and Germanium (Ge). Intrinsic Si has a bandgap of 1.11eV and Intrinsic Ge has a bandgap of 0.67eV. Extrinsic n-doped Ge can be made by adding a small amount of Antimony. 11.1) (5 marks) On a single plot of the 'number of charge carriers' on the y-axis versus 'temperature' on the x-axis, plot the temperature dependence of the number of charge carriers for Intrinsic Si, Intrinsic Ge and...
Problem #1 A large warehouse has five temperature sensors located in five different places. Each sensor circuit is indicated as the figure below, where a DC current source circulates through a temperature-variable- resistance. Tk is the temperature in Celsius at the sensor in a given location; Tref is the reference temperature that each sensor has been calibrated. Assume for this problem that Tref 27 °C. Therefore, each sensor will provide a positive-voltage for temperatures greater than the reference, on the...
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