Simulate the I-V characteristics at three different temperatures: 0°C, 25°C, and 50°C. In MATLAB, for each temperature, separate the forward-bias data (V_d>0) from the reverse-bias ones (V_d<0). For the forward bias I-V characteristics, plot ln〖(I_d 〗) vs V_d of the three temperatures on the same graph. Include your plot here: If we define knee voltage as the voltage when ln〖(I_d)〗=0, find the knee voltages at different temperatures. How does the knee voltage change with temperature? Why does the temperature have such effect on the knee voltage? Does ln〖(I_d)〗 increases with V_d linearly beyond the keen voltage as predicted by the I-V characteristics of an ideal PN junction diode? If not, what’s the difference? For the reverse bias I-V characteristics, plot I_d vs V_d of the three temperatures on the same graph. Include your plot here: Does the I-V characteristics under reverse bias comply with that of an ideal PN junction diode? If not, what’s the difference? How does the temperature affect the I-V characteristics under the reverse-bias?
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Simulate the I-V characteristics at three different temperatures: 0°C, 25°C, and 50°C. In MATLAB, for each...
DIODE CHARACTERISTICS Objective: The objective of this laboratory is to examine and plot the forward characteristics curve of a p-n junction diode and become familiar with the characteristics of both the p-n junction diode and the light emitting diode (LED). Prelab: Answer the following on a separate sheet of paper. Show your work and box your answers 1. Review the data sheets for the IN4001 p-n junction diode and answer the following a) Determine the maximum forward current and the...
consider a silicon pn junction diode at 300 K with nd= na = 10^16 cm-3, u_n 1350 cm^2/v-s, u_p 480 cm^2/v-s, and t_no = t_po= 5×10^-7 s. consider two bias conditions: i) a reverse bias of 1.0 v ii) a forward bias of 0.2 v a) for each bus condition, roughly sketch the band gap diagram - accurately label the energy gap in eV - indicate the difference between E_f on the two sides id the junction and label its...
Please provide the detail answer, preferred clear writing. Thank you. 5. What is the primary difference between forward bias and reverse bias diode circuits? 6. Describe in your own words the characteristics of the ideal diode. What electrical device does a diode replicates during the ON and OFF modes? 7. How can you determine the 'on' and 'off' conditions of a diode? 8. What is the resistance offered by the diode in (a) forward biased mode (b) reverse biased mode?...
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A plot of 1/C2 vs. the applied voltage Va is shown. The dashed line is extrapolated, continuing the data with a constant slope. From the junction capacitance formula and the dependence of W on Vbi-VA, one can obtain an equation for 1/C (a) If the diode is a one-sided junction, find the doping density on the low side from the measured (estimate...
Show all steps please (I have the answers I need the steps Question 1: 20% Given that a silicon PN junction diode (D1) has forward current of 1.5 mA at forward voltage of 0.7V, thermal voltage V-26mV at room temperature. Assuming diode forward and reverse characteristic is given by: Forward equation: izle , Reverse cquation: i=-1 (a) Find reverse saturation current Is parameter. (3%) i= Isere =1.5m = Is e 2026 Is = 3.04x107S A (f) A 0.? (a) Find...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied...
Question 1: An ideal diode turns on for positive anode-cathode voltages. But the characteristic of diode does not appear to show any ID values when voltage across the diode is greater than zero (VD > 0). How do you explain this plot? ---Reverse bias Forward bias --- Question 2: Plot (I-V) characteristic if we place a 10 12 resistor in series with the diode? Question 3: Plot (I-V) characteristic if we place a lV voltage source in series with the...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
Using MULTISIM SIMULATION PLEASE!!! using multisim please Reversed Vascu Procedure II: Diode Characteristics: 1. Wire the circuit shown in Figure B. 3300 LA Vs Vd = (0-15V) Figure B Diode Characteristics pote Mode is defined as The dy to the dio rent through 10 3. Now reverse the diode then adjust the DC supply as shown in Table 2, Record the corresponding current and diode voltage as in step 2. Table 2 Reversed Bias Diode Characteristics Vs (volt) Va la...
Ctri Question 3 (20 Marks) Lab 1-Zener Circuits and Applications Theory: Zener diode is designed to operate in reverse conduction. Zener breakdown occurs at a precisely defined voltage, allowing the diode to be used as a voltage reference or clipper. While Zener diodes are usually operated in reverse conduction, they may also be operated in cutoff and forward conduction. There are two different effects that are used in "Zener diodes". The only practical difference is that the two types have...