1.) In a CMOS NAND gate, if only one PMOS is ON, the output is low...
1.) In a CMOS NAND gate, if only one PMOS is ON, the output is
low voltage (logic 0)
High voltage (logic high)
depends on the state of NMOS
none of the other choices
2.) An NMOS with the drain connected to a 10V and source connected to ground can be turned on by applying a gate to source voltage of
VGS= 0V
VGS= 10V
VGS= -10V
None of the other choices.
3.) For the operation of enhancement type n channel MOSFET, the value of the gate voltage must be
High positive
High negative
Low positive
Zero
4.) With the enhancement type MOSFET when gate input voltage is zero, drain current is
at saturation
zero
IDSS
widening the channel
5.) A CMOS NAND gate can be constructed by connecting PMOS in ______ and NMOS in _______
Series, series
Series, parallel
Parallel, series
Parallel, parallel
NO SOLUTIONS NEEDED. Thank you!
Homework Answers
Add Answer to:
1.) In a CMOS NAND gate, if only one PMOS is ON, the output
is
low...
In a CMOS NOR gate, if only one PMOS is ON, the output is ___. low...
In a CMOS NOR gate, if only one PMOS is ON, the output is ___. low voltage (logic zero) high voltage (logic high) depends on the state of NMOS none of the other choices
CMOS Design Styles Quiz Problem 1: a) What is the typical "topology" for pMOS and nMOS...
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CMOS VLSI DESIGN, Please attempt all the
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Q1 Which of the following is true for a MOS capacitor with a P-type body? Select...
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1. Consider the following current mirror combination, where all transistors have the same kn'(W/L) = kp'(W/L) = 2mA/V2, and VTN-1У, VTP--1V. It is also given that VDD1-10V, VDD2-8V. Remember that for saturation the drain current is given by IDー½ k,"(W/L) (VGS-Yn)" for NMOS and ID ½ kp"(WL) (VGS-V,»)2 for PMOS. You can ignore the channel modulation for all transistors. (a) Find the value of R so that I.-1mA. (b) Are transistors Q1, Q2, Q3 in saturation? (c) What is the...
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Consider the following current mirror combination, where all transistors have the same kn'(W/L) =...
Consider the following current mirror
combination, where all transistors have the same
kn'(W/L) =
kp'(W/L) =
2mA/V2, and VTN =
1V, VTP = -1V. It is also given that VDD1 =
10V, VDD2 = 8V. Remember that for saturation the drain
current is given by ID = ½
kn'(W/L)
(VGS –
VTN)2 for NMOS and
ID = ½
kp'(W/L)
(VGS –
VTP)2 for PMOS. You can
ignore the channel modulation for all transistors.
Find the value of R so that...
Q1 Which of the following is true about the surface mobility of MOSFETs ? Select one:...
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A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os,...
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Question 1: Select the single correct answer [2 marks each] Which of the following statements is true for a MOSFET switch (input is gate node)? A) nMOS is off with logic I' at input B) nMOS is on with logic '1' at input C) pMOS is on with logic '1' at input' D) pMOS is off with logic '0' at input Which of the following CMOS logic circuits will contain...
1. Consider the following current mirror combination, where all transistors have the same kn'(W/L) = kp'(W/L) = 2mA/V2, and VTN-1У, VTP--1V. It is also given that VDD1-10V, VDD2-8V. Remember that for saturation the drain current is given by IDー½ k,"(W/L) (VGS-Yn)" for NMOS and ID ½ kp"(WL) (VGS-V,»)2 for PMOS. You can ignore the channel modulation for all transistors. (a) Find the value of R so that I.-1mA. (b) Are transistors Q1, Q2, Q3 in saturation? (c) What is the...
MULTIPLE CHOICE. Choose the one alternative that best completes the statement or answers the question. 1) The maximum current in a JFET is defined as loss and occurs when VGS is equal to 1) A) zero Volts B) pinch-off voltage C) a voltage greater than the pinch-off voltage D) a small positive voltage of the FET and are unaffected by the network in which 2) 2) Schokley's equation defines the the device is employed. A) transfer characteristics C) drain characteristics...
Consider the following current mirror
combination, where all transistors have the same
kn'(W/L) =
kp'(W/L) =
2mA/V2, and VTN =
1V, VTP = -1V. It is also given that VDD1 =
10V, VDD2 = 8V. Remember that for saturation the drain
current is given by ID = ½
kn'(W/L)
(VGS –
VTN)2 for NMOS and
ID = ½
kp'(W/L)
(VGS –
VTP)2 for PMOS. You can
ignore the channel modulation for all transistors.
Find the value of R so that...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os, is so large it may be neglected. 0) Calculate the open circuit voltage gain Av Yout/ Vis. i) The amplifier has a load of 10 k2. Determine the current gain Va. = 12 V 150k 4k3 Vout Vin 200k GND = 0 V Figure 4b a) State the name...
Yes, this is one problem. Please solve ALL PARTS. Guaranteed
thumbs up for the person who solves it.
3 1. Photodiode amplifier circuit You are designinga CF photosensor circuit for a light detection and ranging LiDAR) system in autonomous vehicles. The circuit utilizes a transimpedance amplifier to convert low-level RF photodiode current signal to a usable voltage output. It consists of a photodiode, an amplifier, and feedback capacitor/resistor pair as shown in Figure 1. We will derive simple equations to...
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