In a p-n junction, conductivity is primarily controlled by?
1-Impurity concentration |
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2-
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3-
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Correct option is A.
Impurity concentration
Reason: If we add impurity In a p-n junction, then depending on impurity it will create either extra electrons or reduce amount of electrons, So by adding up impurity conductivity can be increased or decreased.
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In a p-n junction, conductivity is primarily controlled by? 1-Impurity concentration 2- The bandgap 3- Junction...
XXX is 467
Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side N, = 5x1015 cm3 and the acceptor impurity concentration in the p-side N, = XXX × 1015/cm3 Assume that the diode area A-2x10-3 cm2 and 100cm work Note that the values obtained in the calculations may not be realistic as the Matric # varies greatly. The assignment is only to test your understanding, and must be handwritten Determine the...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Design a silicon pn junction by finding the ratio of the
impurity
n junction by finding the ratio of the impurity concentrations Na e p-n junction to be designed is assumed to have ideal current-voltage (12 pts) N D Design a silic such that 95 percent elect 2. A. cent of the total current in the depletion region is contributed by rons. Th In addition, it has the following parameter values τ,-τ,-0.1 x 10-6 s, D,-10 cm2/s and D,-25 cm2/s...
,
and n-type silicon with doping concentration of
Find the:
1. vaule of the conductivity
2. mobility,
3. conductance
4. sheet resistance
5. total mobile charge
6. mobile charge per unit area
7. field intensity
8. drift velocity
9. transit time
10. current.
A piece of p-type GaAs is doped with a net impurity concentration of N Na-5 × 1018 m-3. Is it degenerate or nondegenerate? Find its electron and hole concentrations and its Fermi level at 300 K. How much is the shift of the Fermi level, measured from the intrinsic Fermi level, caused by the doping of the impurity? Compare the results obtained in this problem for the p-type GaAs with those found in Example 12.3 for the n-type GaAs of...
An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of 1016 cm−3 , donors on the N-side at a concentration of 1017 cm−3 and operated at 300 K. The hole recombination time on the N-side 0.2 µs and the electron recombination time on the P-side is 2 µs. The cross sectional area is 10-2 cm2 a) Calculate the reverse saturation current. b) Calculate the contact potential. e) Calculate the bias voltage needed to obtain...
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concentration of Na 1x1015 cm3 on the p-side and a donor concentration of Na- 1x10" cmon the n-side. Calculate at 300 K (a) the diffusion voltage VD (b) the space charge width at equilibrium and with zero bias (c) the current with forward bias of 0.5 eV. Assume that the current is diffusion dominated. The electron and hole mobilities are ln-1500 cm2/(Vs) and...
A Si p-n-p transistor has impurity concentrations of6*1018, 7 1015 and 9*1017 cm3 in the emitter, base and collector regions correspondingly. The corresponding carrier lifetimes are 10 10-7, and 106 s. The device cross-section area A-0.02 mm2, the emitter base junction is forward biased to 0.7V. Use diffusion coefficients DE-3cm2/s, DB-15 cm2/s, Dc-5cm%, and base with w=0.65 (a) Calculate emitter current using iEp.n-qADpPn p exp( )1 (b) Calculate current gain: (c) Estimate the device switching time (RC) assuming that resistance...
Biased Si p-n junction (a) An abrupt Si p-n junction (Schottky model) of square cross section with area of 1x10-4 cm* has the following properties at 300 K: side Na - 1x1017 cm3 n side Na=1x1015 -3 cim =10us 200 cm 2/Vs) In 700 cm2/(Vs) In = 1300 cm 2/(Vs - 450 cm/(Vs) The junction is forward biased by 0.5 V. What is the forward current? (b) What is the current at a reverse bias of-0.5 V?
Biased Si p-n...
2. For an abrupt p-n junction of area 10^-4 cm^-2, the measured capacitance under reverse bias of 20 V is 12 pF/cm^2. Calculate the donor concentration.