Why is the collector current IC increasing when you increase the base current IB in a...
Why is the collector current IC increasing when you increase the base current IB in a bipolar transistor? Explain the physics behind it.
Homework Answers
Higher base current ensures more number of majority carriers reaching the base from the emitter, where they becomes minority carriers. Now, since the base to collector is reverse biased in active mode, the drift of increased number of minority carriers increases, which therefore increases the collector current.
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Why is the collector current IC increasing when you increase the
base current IB in a...
1) Calculate the value of the base current IB. (in μA) 2) Calculate the value of...
1) Calculate the value of the base current
IB. (in μA)
2) Calculate the value of the base collector current
IC. (In mA)
3) Calculate the value of the collector-emitter voltage
VCE. (In V)
Required information In the circuit below: RB = 820 kN, Vcc = 12 V, RC = 3 kN2, and Bdc = 100. Note: The transistor is silicon. Vcc w Rc Re Bdc
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
8. Find a) base current is , b) collector current ic and c) voltage between collector...
8. Find a) base current is , b) collector current ic and c) voltage between collector and emitter VCE Vcc=4.6V VCC RB=200k R WWW RRC=lk B=100 n-p-n BJT
HELP with finding 8 and 9 2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (k...
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
2. What is the collector current (Ic) for the transistor below - compute the numerical value...
2. What is the collector current (Ic) for the transistor below - compute the numerical value of Ic Is = 10-15 A Ic Rs + 4oka 6V Assome V4 > 100V, 5= 200, Y = 4000 as always
A. As an electronic device, what is the function or purpose of a bipolar junction transistor when...
A. As an electronic device, what is the function or purpose of a bipolar junction transistor when it is utilized in an analog circuit? B. Make a sketch of a typical volume element of a silicon pnp transistor connected in active larger than the base current. In your sketch, show the path of carriers (both holes and electrons) as they proceed from the emitter to the collector. Identify the paths of all 3 types of base current and explain what...
(1 point) RB IC VB VCC Determine the collector current of the transistor in the figure...
(1 point) RB IC VB VCC Determine the collector current of the transistor in the figure above. Vcc 2V, VB - 1.7V, and RB - 50K2 1-2 × 10-17A and β-100 nA
c) If the collector current of a transistor is 0.3 amps and the base current is...
c) If the collector current of a transistor is 0.3 amps and the base current is 0.001 amps, what is the current gain? (2 marks) Total 10 marks Space to answer Question 5 here
4. Show that the current transfer ratio is equal to: CE2 REFV for the basic BJT Current Mirror sh...
4. Show that the current transfer ratio is equal to: CE2 REFV for the basic BJT Current Mirror shown next when the junction ratio between Q 2 and Q1 is equal to n # 1. In the above equation, VB is the voltage between base and emitter when the transistor is in active mode, V z is the voltage between collector and emitter at the rightmost transistor, and V is the Early voltage. REF Note: For this problem we are...
Assume you have a BJT circuit in saturation mode shown below. If you increase the base...
Assume you have a BJT circuit in saturation mode shown below. If you increase the base current by getting Vs bigger, how does it affect the collector current Ic? Explain in terms of the saturation point on the DC Load Line. VCC 17.0V | RC 31k0 ICO . . . . . . R R . . .. . . .. .
1) Calculate the value of the base current
IB. (in μA)
2) Calculate the value of the base collector current
IC. (In mA)
3) Calculate the value of the collector-emitter voltage
VCE. (In V)
Required information In the circuit below: RB = 820 kN, Vcc = 12 V, RC = 3 kN2, and Bdc = 100. Note: The transistor is silicon. Vcc w Rc Re Bdc
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
8. Find a) base current is , b) collector current ic and c) voltage between collector and emitter VCE Vcc=4.6V VCC RB=200k R WWW RRC=lk B=100 n-p-n BJT
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
2. What is the collector current (Ic) for the transistor below - compute the numerical value of Ic Is = 10-15 A Ic Rs + 4oka 6V Assome V4 > 100V, 5= 200, Y = 4000 as always
A. As an electronic device, what is the function or purpose of a bipolar junction transistor when it is utilized in an analog circuit? B. Make a sketch of a typical volume element of a silicon pnp transistor connected in active larger than the base current. In your sketch, show the path of carriers (both holes and electrons) as they proceed from the emitter to the collector. Identify the paths of all 3 types of base current and explain what...
(1 point) RB IC VB VCC Determine the collector current of the transistor in the figure above. Vcc 2V, VB - 1.7V, and RB - 50K2 1-2 × 10-17A and β-100 nA
c) If the collector current of a transistor is 0.3 amps and the base current is 0.001 amps, what is the current gain? (2 marks) Total 10 marks Space to answer Question 5 here
4. Show that the current transfer ratio is equal to: CE2 REFV for the basic BJT Current Mirror shown next when the junction ratio between Q 2 and Q1 is equal to n # 1. In the above equation, VB is the voltage between base and emitter when the transistor is in active mode, V z is the voltage between collector and emitter at the rightmost transistor, and V is the Early voltage. REF Note: For this problem we are...
Assume you have a BJT circuit in saturation mode shown below. If you increase the base current by getting Vs bigger, how does it affect the collector current Ic? Explain in terms of the saturation point on the DC Load Line. VCC 17.0V | RC 31k0 ICO . . . . . . R R . . .. . . .. .
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