1.) I-V characteristics curves of both Si and GaAs based P-N diodes have nearly same nature. The difference between their I-V characteristics are-
2.) Energy band gap Eg=2.48 eV.
photons with energy less than the band gap energy will pass though the semiconductor while photons with energy greater than band gap energy are absorbed.
The wavelength of photons that can be absorbed by semiconductor can be determined as
Thus photons with wavelength less than are absorbed within the semiconductor.
3.)In active region of PNP transistor the emitter-base region is forward biased, while the collector-base junction is reverse biased so holes are injected into the base. The base is very thin, and most of the holes cross the reverse-biased base–collector junction and to be collected at the collector.So collector current is mainly due to the injection of holes from heavily doped emitter.
where is current amplification factor.
But in case of inverse active region E-B junction is reverse biased, so minority charge carriers i.e. electrons will be injected into base ,since base is very thin so electrons are now collected at collectors. Here collector current is due to minority charge carriers of heavily doped emitter so this current must bs less than the current in cace of active region.
1) Briefly explain the difference between the I-V relationships of a silicon and a gallium arsenide...
1) Briefly explain the difference between the I-V relationships of a silicon and a gallium arsenide PN diode. 2) A certain semiconductor has energy gap of 2.48eV. Determine the range of wavelengths that are absorbed by the semiconductor 21 Why is the collector current in a PNP transistor in the inverse active region much smaller than in the active region? 1) Briefly explain the difference between the I-V relationships of a silicon and a gallium arsenide PN diode. 2) A...
1.) Determine the intrinsic carrier density in Germanium and Gallium Arsenide at 27°C The mass of a free electron, mo 9.11 x 10 kg . The Planck's constant, h 6.626 x 10-4J-s or 4.14 x 10s eV-s . The Boltzmann's constant, k 1.38 x 10-23 J/K or 8.617 x 10° eV/K Symbol Germanium Silicon Gallium Arsenide E, (eV)1 0.66 Bandgap energy at 300 K The effective mass of the electrons l m、! 0.55m The effective mass of the holes ma0.37mo...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied...
consider a silicon pn junction diode at 300 K with nd= na = 10^16 cm-3, u_n 1350 cm^2/v-s, u_p 480 cm^2/v-s, and t_no = t_po= 5×10^-7 s. consider two bias conditions: i) a reverse bias of 1.0 v ii) a forward bias of 0.2 v a) for each bus condition, roughly sketch the band gap diagram - accurately label the energy gap in eV - indicate the difference between E_f on the two sides id the junction and label its...
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Need help with schematics for blocks 3, 4 and 5!!!!!! Include all schematics and wiring along with the component values and how you acquired them. Explain how each block functions and label any figures. Need schematics for blocks 3, 4 and 5!!!!!! Goal For your final project you will be asked to design and assemble a system in which you will input a stereo audio signal, mix the channels into a single mono signal, amplify the signal, filter it to...