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Plot I-V characteristic of a p-n junction diode, and describe the phenomenon of avalanche breakdown phenomenon in a Schottky

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I-V characteristic of a p-n junction diode:

+In Forward (MA) Current - -V + +- Reverse voltage Forward voutage Germanium Silicon 10.3 10.1 Avalanche breakdown region -I

Avalanche breakdown phenomenon in a Schottky diode:

The schottky diode is one of the diodes which have zero diffusion capacitance and smaller transition citance than normal dioddiode Vocarpe Two mechanisms of diode breakdown for increasing revease Voltage are recognised. In one mechanism, the thermallborak down is du In general, schottky diode suffer from their very limited avalanche break down stability due to avalanche br

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