I-V characteristic of a p-n junction diode:
Avalanche breakdown phenomenon in a Schottky diode:
Plot I-V characteristic of a p-n junction diode, and describe the phenomenon of avalanche breakdown phenomenon...
4. Calculate the breakdown voltage in a p'n junction of GaAs if the p doping is 1E18/cm3 and n doping is 1E16/cm3. Assume all donors and acceptors are ionized. n, for GaAs-2E6/cm3. The maximum field in the diode when avalanche occurs is 5E5 V/cm
Give a physical interpretation to the phenomenon that the (small) reverse current of a pn-junction diode does not increase when the reverse-bias voltage increases (before reaching the breakdown voltage).
Design an abrupt Sip+-n junction diode that has a reverse breakdown voltage of 130 V andhas a forward-bias current of 2.2 mA at V = 0.7 volt. Assume tp = l0^-7 s.
Which region of a pn junction, n-type or p-type, is the anode of a pn junction diode? The Voltage-Current characteristic diagram of a diode shows three regions of operation for a p-n junction diode. What are those three regions?
Consider a p-n junction diode with I0=100pA,
I(v)=I0[exp(eV/kt)-1] and which is biased at 100mA. Assume the
diode can dissipate at most 100mW.
a) Find the dissipated power in the diode field at 25°C.
b) Find the power for an overheated diode to 250°C.
Assawe te diode cau dissitate at wort loo ww
4.23 (a) Oualitatively hand-sketch log(I) vs. V for a Schottky diode and a PN diode in the same figure. Comment on the similarity and difference. (b) Calculate the lo of a 1 mm2 MoSi2 on N-type Si Schottky diode. Compare it with the 10 of a 1 m m-p"N diode with Nd = 1018 cm-3 andゲ1 μα Compare the forward voltage of the two diodes in (b) at a forward current of 50 A. Besides increasing the diode area (cost),...
(20 points) A Si junction does not go into breakdown until the electric field reaches 6x 10* V/cm. If ND - NA-101 cm3, calculate the width and applied voltage at the onset of avalanche breakdown
(20 points) A Si junction does not go into breakdown until the electric field reaches 6x 10* V/cm. If ND - NA-101 cm3, calculate the width and applied voltage at the onset of avalanche breakdown
A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a) What breakdown mechanism do you expect will be dominant in this device? Explain. b) Find the approximate breakdown voltage for this diode. c) Calculate the depletion width at the breakdown voltage. d) What is the maximum magnitude of the electric field in the depletion region at the breakdown voltage?
3. Consider a varicap diode made of Si p-n junction is being used in a radio tuning circuit (LC tank) as shown on right. The n-side of the diode has a doping concentration of 2x1016 cm3 and the built-in voltage is 802 mV. Calculate the reverse bias voltage (V) required to tune into the FM station at 106.7 MHz. The junction area is 100 μ㎡ L 220 uH V, Solution We were unable to transcribe this image
3. Consider a...
Question 1: An ideal diode turns on for positive anode-cathode voltages. But the characteristic of diode does not appear to show any ID values when voltage across the diode is greater than zero (VD > 0). How do you explain this plot? ---Reverse bias Forward bias --- Question 2: Plot (I-V) characteristic if we place a 10 12 resistor in series with the diode? Question 3: Plot (I-V) characteristic if we place a lV voltage source in series with the...