Which region of a pn junction, n-type or p-type, is the anode of a pn junction...
- Which region of a pn junction, n-type or p-type, is the anode of a pn junction diode?
- The Voltage-Current characteristic diagram of a diode shows three regions of operation for a p-n junction diode. What are those three regions?
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Which region of a pn junction, n-type or p-type, is the anode
of a pn junction...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
4. A p-type semiconductor has positive charge carriers but is electrically neutral. Similarly an n-type semiconductor...
4. A p-type semiconductor has positive charge carriers but is electrically neutral. Similarly an n-type semiconductor has negative charge carriers but is electrically neutral. When they are put in contact (making a diode), statistical forces cause some of the charge carriers to migrate to the opposite semiconductor. The charge carriers move until an E-field is created to stop the migration. This E-field creates a depletion region near the junction where there are no charge carriers. If a forward voltage is...
The parameters of a pn junction diode at 300K are listed in the following table, the...
The parameters of a pn junction diode at 300K are listed in the following table, the cross section area of the junction is 105 cm2 n region N10" cm Hu = 850 cm?/V-s p region t,e = 10-6 s ,1" 1250 cm2/V-s 11,-420 cm2/V-s 320 cm/V-s (a) Sketch a band diagram at equilibrium (b) Find the reserve saturation current (c) Find the ideal diode current with forward bias voltage at 0.5 V and 0.7 V, respectively. (d) Find the current...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on t...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
N P n=10 p=109 1013 4.32P) The figure shows carrier densities of a Si PN junction...
N P n=10 p=109 1013 4.32P) The figure shows carrier densities of a Si PN junction diode. Before solution choose suitable positive integer values of a and b (a>b) and show this numbers clearly in a box. a) Write the bias type and explain your reason. Calculate the bias voltage. (n=101) b) What are the equilibrium values of minority carriers? c) Calculate the hole concentration on the N side at x=0. d) Diffusion constants of electron and holes has Dn=cDp...
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step ju...
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step junction diode maintained at room temperature are shown in the plot below: п or p (log scale Pp -106 10 102 a) Is the diode forward or reverse biased? Explain briefly. b) Do low-level injection conditions prevail in the quasi-neutral regions of the diode? Explain briefly. c) What are the p-side and n-side net dopant concentrations NA and ND, respectively? d) Determine the...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional area A = 104cm2. The doping concentration on the p-type side is Na= 1017 cm3 (uncompensated). (The n-type side is degenerately doped.) The electron recombination lifetime in the p-type region is tn = 10-6 s. The width of the quasi-neutral p-type region is 1 um, for VA=0 V. a Is this a narrow-base diode? Justify your answer. b) Calculate the diode saturation current Io....
this is a problem of semiconductor device and fundamentals. Problem 4: pn Junction Current Distributions Consider a...
this is a problem of semiconductor device and
fundamentals.
Problem 4: pn Junction Current Distributions Consider a Si pn step junction diode maintained at room temperature, with p-side and n-side dopant concentrations NA 1016 cm3 and Np-2x1016 cm3, respectively. (You may assume that each side is uncompensated.) The minority carrier recombination lifetimes are τ,-10-6 s and τ,-10-7 s on the p-side and n-side, respectively a) Calculate the minority carrier densities at the edges of the depletion region when the applied...
pn-Junction – Small Signal Model
Problem 1: pn-Junction – Small Signal ModelFor the diode in Problem 2 biased at VA = 0.7 V:a) What is the diode conductance, G?b) Calculate the depletion charge, i.e. the magnitude of the charge stored on either side of the metallurgical junction in the depletion region.c) What is the depletion capacitance, CJ ?d) Calculate the magnitude of the minority-carrier charge stored in the quasi-neutral p-type region.e) What is the diffusion capacitance, CD ?f) How would your answers to parts (a),...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
4. A p-type semiconductor has positive charge carriers but is electrically neutral. Similarly an n-type semiconductor has negative charge carriers but is electrically neutral. When they are put in contact (making a diode), statistical forces cause some of the charge carriers to migrate to the opposite semiconductor. The charge carriers move until an E-field is created to stop the migration. This E-field creates a depletion region near the junction where there are no charge carriers. If a forward voltage is...
The parameters of a pn junction diode at 300K are listed in the following table, the cross section area of the junction is 105 cm2 n region N10" cm Hu = 850 cm?/V-s p region t,e = 10-6 s ,1" 1250 cm2/V-s 11,-420 cm2/V-s 320 cm/V-s (a) Sketch a band diagram at equilibrium (b) Find the reserve saturation current (c) Find the ideal diode current with forward bias voltage at 0.5 V and 0.7 V, respectively. (d) Find the current...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
3.13 Si pn junction Consider a long pn junction diode with an acceptor doping Naof 1018 cm-3 on the p-side and donor concentration of Nj on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the total dopant concentration, Ndopant (cm), through the following approximate empirical relation (5x 10-7)/(1 + 2 10-17N1°pan.) where T is in seconds. (a)...
N P n=10 p=109 1013 4.32P) The figure shows carrier densities of a Si PN junction diode. Before solution choose suitable positive integer values of a and b (a>b) and show this numbers clearly in a box. a) Write the bias type and explain your reason. Calculate the bias voltage. (n=101) b) What are the equilibrium values of minority carriers? c) Calculate the hole concentration on the N side at x=0. d) Diffusion constants of electron and holes has Dn=cDp...
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step junction diode maintained at room temperature are shown in the plot below: п or p (log scale Pp -106 10 102 a) Is the diode forward or reverse biased? Explain briefly. b) Do low-level injection conditions prevail in the quasi-neutral regions of the diode? Explain briefly. c) What are the p-side and n-side net dopant concentrations NA and ND, respectively? d) Determine the...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional area A = 104cm2. The doping concentration on the p-type side is Na= 1017 cm3 (uncompensated). (The n-type side is degenerately doped.) The electron recombination lifetime in the p-type region is tn = 10-6 s. The width of the quasi-neutral p-type region is 1 um, for VA=0 V. a Is this a narrow-base diode? Justify your answer. b) Calculate the diode saturation current Io....
this is a problem of semiconductor device and
fundamentals.
Problem 4: pn Junction Current Distributions Consider a Si pn step junction diode maintained at room temperature, with p-side and n-side dopant concentrations NA 1016 cm3 and Np-2x1016 cm3, respectively. (You may assume that each side is uncompensated.) The minority carrier recombination lifetimes are τ,-10-6 s and τ,-10-7 s on the p-side and n-side, respectively a) Calculate the minority carrier densities at the edges of the depletion region when the applied...
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