Given a pn junction with both thin p-type and n-type materials such that Wn and Wp...
Given a pn junction with both thin p-type and n-type materials such that Wn and Wp are 100 nm each and much less than Ln and Lp, respectively. ND = 1 × 10^17 cm−3 and NA = 1 × 10^16 cm−3 . There are traps in the depletion region such that the recombination lifetime in the depletion region (not the bulk regions) is 1 ns. Plot a. the charge profile only in the neutral regions, and b. the current profile everywhere for an applied forward bias of 0.5V.
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Given a pn junction with both thin p-type and n-type materials
such that Wn and Wp...
Which region of a pn junction, n-type or p-type, is the anode of a pn junction...
Which region of a pn junction, n-type or p-type, is the anode of a pn junction diode? The Voltage-Current characteristic diagram of a diode shows three regions of operation for a p-n junction diode. What are those three regions?
this is a problem of semiconductor device and fundamentals. Problem 4: pn Junction Current Distributions Consider a...
this is a problem of semiconductor device and
fundamentals.
Problem 4: pn Junction Current Distributions Consider a Si pn step junction diode maintained at room temperature, with p-side and n-side dopant concentrations NA 1016 cm3 and Np-2x1016 cm3, respectively. (You may assume that each side is uncompensated.) The minority carrier recombination lifetimes are τ,-10-6 s and τ,-10-7 s on the p-side and n-side, respectively a) Calculate the minority carrier densities at the edges of the depletion region when the applied...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minor...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
Consider a silicon pn junction at T = 300 K, NA-Np - 4x106cm. The minority carrier...
Consider a silicon pn junction at T = 300 K, NA-Np - 4x106cm. The minority carrier lifetimes are tn = Tp=1 us. The junction is forward biased with V, -0.6V. The minority carrier diffusion coefficients are D = 20 cm²/s, D = 10 cm²/s. n;= 1.5x100cm, kt/e = 0.026V Depletion region n-type p-type a) (5 points) Do we have low-level injection? b) (10 points) Calculate the electron concentration at x = -(Xp + Ln) where L, is the electron diffusion...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional area A = 104cm2. The doping concentration on the p-type side is Na= 1017 cm3 (uncompensated). (The n-type side is degenerately doped.) The electron recombination lifetime in the p-type region is tn = 10-6 s. The width of the quasi-neutral p-type region is 1 um, for VA=0 V. a Is this a narrow-base diode? Justify your answer. b) Calculate the diode saturation current Io....
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε...
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε' = 1 1 .7x 8.854x 10-14 Flon;ー-0.025 V Assume the critical field to be equal to 3x105 V/cm. a) (5 points) Compare the hole density at xn to the electron density at-Xp b) (5 points) Compare the hole current at xn to...
4. A p-type semiconductor has positive charge carriers but is electrically neutral. Similarly an n-type semiconductor...
4. A p-type semiconductor has positive charge carriers but is electrically neutral. Similarly an n-type semiconductor has negative charge carriers but is electrically neutral. When they are put in contact (making a diode), statistical forces cause some of the charge carriers to migrate to the opposite semiconductor. The charge carriers move until an E-field is created to stop the migration. This E-field creates a depletion region near the junction where there are no charge carriers. If a forward voltage is...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
Wdep P-Type N -Type Q1. Consider the PN junction at equilibrium shown in the figure above....
Wdep P-Type N -Type Q1. Consider the PN junction at equilibrium shown in the figure above. Both N-side and P-side has same doping density NA ND 1017 /cm3. Assume both electron and hole mobility to be same, i.e Me - 1000cm2/Vs. a equilibrium energy band diagram. Find (EF Et at(i)x-0. (ii) x »xn (iii) X <K_Xp Find the value of built-in voltage and total depletion width (5+5 points) Find electron and hole densities at (i) x = 0. (ii) x...
this is a problem of semiconductor device and
fundamentals.
Problem 4: pn Junction Current Distributions Consider a Si pn step junction diode maintained at room temperature, with p-side and n-side dopant concentrations NA 1016 cm3 and Np-2x1016 cm3, respectively. (You may assume that each side is uncompensated.) The minority carrier recombination lifetimes are τ,-10-6 s and τ,-10-7 s on the p-side and n-side, respectively a) Calculate the minority carrier densities at the edges of the depletion region when the applied...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
Consider a silicon pn junction at T = 300 K, NA-Np - 4x106cm. The minority carrier lifetimes are tn = Tp=1 us. The junction is forward biased with V, -0.6V. The minority carrier diffusion coefficients are D = 20 cm²/s, D = 10 cm²/s. n;= 1.5x100cm, kt/e = 0.026V Depletion region n-type p-type a) (5 points) Do we have low-level injection? b) (10 points) Calculate the electron concentration at x = -(Xp + Ln) where L, is the electron diffusion...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional area A = 104cm2. The doping concentration on the p-type side is Na= 1017 cm3 (uncompensated). (The n-type side is degenerately doped.) The electron recombination lifetime in the p-type region is tn = 10-6 s. The width of the quasi-neutral p-type region is 1 um, for VA=0 V. a Is this a narrow-base diode? Justify your answer. b) Calculate the diode saturation current Io....
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε' = 1 1 .7x 8.854x 10-14 Flon;ー-0.025 V Assume the critical field to be equal to 3x105 V/cm. a) (5 points) Compare the hole density at xn to the electron density at-Xp b) (5 points) Compare the hole current at xn to...
4. A p-type semiconductor has positive charge carriers but is electrically neutral. Similarly an n-type semiconductor has negative charge carriers but is electrically neutral. When they are put in contact (making a diode), statistical forces cause some of the charge carriers to migrate to the opposite semiconductor. The charge carriers move until an E-field is created to stop the migration. This E-field creates a depletion region near the junction where there are no charge carriers. If a forward voltage is...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
Wdep P-Type N -Type Q1. Consider the PN junction at equilibrium shown in the figure above. Both N-side and P-side has same doping density NA ND 1017 /cm3. Assume both electron and hole mobility to be same, i.e Me - 1000cm2/Vs. a equilibrium energy band diagram. Find (EF Et at(i)x-0. (ii) x »xn (iii) X <K_Xp Find the value of built-in voltage and total depletion width (5+5 points) Find electron and hole densities at (i) x = 0. (ii) x...
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