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4. Calculate the breakdown voltage in a p'n junction of GaAs if the p doping is...
An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of...
An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of 1016 cm−3 , donors on the N-side at a concentration of 1017 cm−3 and operated at 300 K. The hole recombination time on the N-side 0.2 µs and the electron recombination time on the P-side is 2 µs. The cross sectional area is 10-2 cm2 a) Calculate the reverse saturation current. b) Calculate the contact potential. e) Calculate the bias voltage needed to obtain...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
(20 points) A Si junction does not go into breakdown until the electric field reaches 6x 10* V/cm...
(20 points) A Si junction does not go into breakdown until the electric field reaches 6x 10* V/cm. If ND - NA-101 cm3, calculate the width and applied voltage at the onset of avalanche breakdown
(20 points) A Si junction does not go into breakdown until the electric field reaches 6x 10* V/cm. If ND - NA-101 cm3, calculate the width and applied voltage at the onset of avalanche breakdown
1. A metal/n-GaAs Schottky Barrier is formed by depositing platinum on n-GaAs. The electron affinity of...
1. A metal/n-GaAs Schottky Barrier is formed by depositing platinum on n-GaAs. The electron affinity of GaAs is 4.0 eV. The work function of Pt is 5.0 eV. The doping in GaAs is 1E16/cm3, and Nc=5E17/cm3. i) Draw the thermal equilibrium energy band diagram for the structure ii) Calculate the barrier height and the built-in voltage iii) Calculate the depletion width in GaAs, given ε(total) for GaAs=1E-12 F/cm --> w=sqrt((2*ε*Vbi)/(q*ND)) iv) Calculate the depletion capacitance for 1 cm2 area v)...
A p-n junction is created by doping the right side of a piece of silicon with...
A p-n junction is created by doping the right side of a piece of silicon with 1014 atoms/cm3 of phosphorus and the left side with 1018 atoms/cm3 of boron. Assume that the dopants are fully ionized, and assume the junction is at x = 0 with x+ pointed to the right. a) Plot by hand (roughly to scale) an energy band diagram of the junction and label EGAP, EC, EV, EF and EFi. Using the effective density of states, calculate...
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3....
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3. The junction cross-sectional area is A 103 cm2 and the applied forward-bias voltage is Va 1.10 V. Calculate the (a) minority electron diffusion cur rent at the edge of the space charge region, (b) minority hole diffusion current at the edge of the space charge region, and (c) total current in the pn junction diode.
1o points: Conside r an abrupt Si pn junction that has 10 acceptors em3 on the p-side donors on t...
asap. please
1o points: Conside r an abrupt Si pn junction that has 10 acceptors em3 on the p-side donors on the n-side. The minority carier recombination times are fe-490 ns for and 109 electrons in the 1350 cm Vs, and with Nd-10 cm and A,s 65 cm ,The cross-sectional area is 1.5 mm. Assume this is a long diode, please calculate the current, I, hrough the diode at room temperature when the voltage, V, acoss it is 0.25 2.5...
Plot I-V characteristic of a p-n junction diode, and describe the phenomenon of avalanche breakdown phenomenon...
Plot I-V characteristic of a p-n junction diode, and describe the phenomenon of avalanche breakdown phenomenon in a Schottky diode.
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. W...
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. What are the a) width of depletion region, b) width of depletion region in n side, c) width of depletion region in p side, d) junction potential at zero bias, e) junction width at a reverse bias of 13 V, and f) maximum electric field in zero bias just in the middle of the P-N junction at room temperature?...
Consider a gold-GaAs Schottky diode with a capacitance of 1 pF at -1 V. What is...
Consider a gold-GaAs Schottky diode with a capacitance of 1 pF at -1 V. What is the doping density of the GaAs? Also calculate the depletion layer width at zero bias and the field at the surface of the semiconductor at -10 V bias voltage. The area of the diode is 10-5 cm2. Design a platinum-silicon diode with a capacitance of 1 pF and a maximum electric field less than 104 V/cm at -10 V bias. Provide a possible doping...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
(20 points) A Si junction does not go into breakdown until the electric field reaches 6x 10* V/cm. If ND - NA-101 cm3, calculate the width and applied voltage at the onset of avalanche breakdown
(20 points) A Si junction does not go into breakdown until the electric field reaches 6x 10* V/cm. If ND - NA-101 cm3, calculate the width and applied voltage at the onset of avalanche breakdown
Q3 Consider a GaAs pn junction with doping concentrations Na5 x 106 cm-3 and N1016 cm-3. The junction cross-sectional area is A 103 cm2 and the applied forward-bias voltage is Va 1.10 V. Calculate the (a) minority electron diffusion cur rent at the edge of the space charge region, (b) minority hole diffusion current at the edge of the space charge region, and (c) total current in the pn junction diode.
asap. please
1o points: Conside r an abrupt Si pn junction that has 10 acceptors em3 on the p-side donors on the n-side. The minority carier recombination times are fe-490 ns for and 109 electrons in the 1350 cm Vs, and with Nd-10 cm and A,s 65 cm ,The cross-sectional area is 1.5 mm. Assume this is a long diode, please calculate the current, I, hrough the diode at room temperature when the voltage, V, acoss it is 0.25 2.5...
Plot I-V characteristic of a p-n junction diode, and describe the phenomenon of avalanche breakdown phenomenon in a Schottky diode.
Q1) A diode has a doping of No- 1019 /cm3 on the n-type side and NA 101/cm3 on the p-type side. What are the a) width of depletion region, b) width of depletion region in n side, c) width of depletion region in p side, d) junction potential at zero bias, e) junction width at a reverse bias of 13 V, and f) maximum electric field in zero bias just in the middle of the P-N junction at room temperature?...
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