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For an ideal MOS structure, the SiO2 thickness is 150 A, and the substrate is doped...
A MOS capacitor is made on n-type silicon with oxide thickness of 50 A, a positive interface charge of 5 x 1010 cm2 and...
A MOS capacitor is made on n-type silicon with oxide thickness of 50 A, a positive interface charge of 5 x 1010 cm2 and a uniform positive oxide charge of density p- 2 x 106 cm3 throughout the oxide. The substrate is doped with Na-101" cm3 and the gate is polysilicon doped with boron just to the edge of degeneracy (p+ poly, Ef -Ev). a. Calculate the flat band voltage VB and the threshold voltage Vr b. Sketch the charge...
6. A MOS system has an n+ polysilicon gate and a p-type silicon substrate doped to...
6. A MOS system has an n+ polysilicon gate and a p-type silicon substrate doped to N. =10cm. Assume there is an oxide surface charge density (Q,/q) = 100cm 2. Design the oxide thickness so that V1 = 0.5 V (no bias is applied between the channel and substrate). Answer: x 58.5 nm OX
For a MOS-structure with an n-type Si, (a) estimate the inversion voltage onset assuming that the flat band condition is Vo 0.5V and draw the corresponding energy band diagram. (b) Using ND 5*101...
For a MOS-structure with an n-type Si, (a) estimate the inversion voltage onset assuming that the flat band condition is Vo 0.5V and draw the corresponding energy band diagram. (b) Using ND 5*1017 cm3, calculate thickness of the depletion region under applied 1V bias (assume depletion mode) (c) For the same MOS structure, sketch a C-V curve and (d) calculate high-frequency maximum and minimum capacitances assuming metal contact area of 10 um2 and Si thickness of 500A (SiO2 dielectric constant...
Assignment-2) Consider a MOS structure made out of a W gate (WM = 4.54 eV), a 4.5 nm SiO2 insulator, and a p-type Si substrate with NA = 6x1017 cm-3. Estimate the electric field in the oxide and the s...
Assignment-2) Consider a MOS structure made out of a W gate (WM = 4.54 eV), a 4.5 nm SiO2 insulator, and a p-type Si substrate with NA = 6x1017 cm-3. Estimate the electric field in the oxide and the surface potential at zero bias.
Problem3: Consider a MOS capacitor maintained at T 300K with the following characteristics: Assume Esi 1.9,x 3.9,8.85 x 10-14 F/cm, and n 1.5 x 1010cm3 . Gate material is n+ poly-silicon . Total n...
Problem3: Consider a MOS capacitor maintained at T 300K with the following characteristics: Assume Esi 1.9,x 3.9,8.85 x 10-14 F/cm, and n 1.5 x 1010cm3 . Gate material is n+ poly-silicon . Total negative oxide charge of 5x 1011q C/cnm2 . Substrate is n-type Si, with doping concentration 1x1016 cm3 Oxide thickness 5 nm . The electron affinity for Si is 4.03eV? a) Draw the band diagram at equilibrium. b) From part (a). What is the substrate (bulk) condition at...
Consider an n-channel Silicon MOS system with a substrate resistivity of 10 0-cm and with a...
Consider an n-channel Silicon MOS system with a substrate resistivity of 10 0-cm and with a polycrystalline gate. Assume that the polysilicon gate is doped with boron atoms to a density of 1x1019 cm and that the silicon dioxide is 50 nm-thick. The channel is not biased except from the gate (Vc= VB = 0). (i) Accurately sketch the band diagram identifying flatband voltage, surface potential at inversion, depletion width at inversion, and charges at inversion. Tabulate these parameters. (ii)...
Assignment-2) Consider a MOS structure made out of a W gate (WM = 4.54 eV), a...
Assignment-2) Consider a MOS structure made out of a W gate (WM = 4.54 eV), a 4.5 nm SiO2 insulator, and a p-type Si substrate with NA = 6x1017 cm-3. Estimate the electric field in the oxide and the surface potential at zero bias.
3. For an n-channel MOSFET with gate oxide (SiO2) thickness of 30 nm, threshold voltage of 0.7 V,...
3. For an n-channel MOSFET with gate oxide (SiO2) thickness of 30 nm, threshold voltage of 0.7 V, Z = 30 um, and length of the device is 0.9 μm, calculate the drain current for VG-3 V and VD-0.2 V. Assume that the electron channel mobility is 200 cm'/V-sec. What will be the required drain current to drive the MOS in saturation region? How the drain current will change if HfO2 with Ks 25 will be used as a gate...
Section B (total 60 marks for section B) B1 a) An MOS capacitor has a p-type semiconductor substrate doped with an impu...
Section B (total 60 marks for section B) B1 a) An MOS capacitor has a p-type semiconductor substrate doped with an impurity concentration of 1018 cm3. Assume a poly-Si material is used for the gate. Draw a diagram of the capacitor structure showing material types and an energy band diagram it is in thermal equilibrium. (10 marks) b) Given an MOS capacitor with a p-type semiconductor substrate and poly-Si material as gate (in part a), what is the meaning of...
a. Given an MOS structure made of p-type Si( Na 1017 cm, relative permittivity of 11.7)...
a. Given an MOS structure made of p-type Si( Na 1017 cm, relative permittivity of 11.7) and SiO2 (thickness 200 À, relative permittivity of 3.9).Assume the work functions of the metal and semiconductor are equal. Find φ, wm (maximum depletion width), the threshold voltage, Vr, and the minimum value of MOS capacitance (Cmin). (15 points) VT Cin Wm Vr Cmin b. Describe several approaches to enhance the capacitance of MOS structures. (5 points)
A MOS capacitor is made on n-type silicon with oxide thickness of 50 A, a positive interface charge of 5 x 1010 cm2 and a uniform positive oxide charge of density p- 2 x 106 cm3 throughout the oxide. The substrate is doped with Na-101" cm3 and the gate is polysilicon doped with boron just to the edge of degeneracy (p+ poly, Ef -Ev). a. Calculate the flat band voltage VB and the threshold voltage Vr b. Sketch the charge...
6. A MOS system has an n+ polysilicon gate and a p-type silicon substrate doped to N. =10cm. Assume there is an oxide surface charge density (Q,/q) = 100cm 2. Design the oxide thickness so that V1 = 0.5 V (no bias is applied between the channel and substrate). Answer: x 58.5 nm OX
For a MOS-structure with an n-type Si, (a) estimate the inversion voltage onset assuming that the flat band condition is Vo 0.5V and draw the corresponding energy band diagram. (b) Using ND 5*1017 cm3, calculate thickness of the depletion region under applied 1V bias (assume depletion mode) (c) For the same MOS structure, sketch a C-V curve and (d) calculate high-frequency maximum and minimum capacitances assuming metal contact area of 10 um2 and Si thickness of 500A (SiO2 dielectric constant...
Problem3: Consider a MOS capacitor maintained at T 300K with the following characteristics: Assume Esi 1.9,x 3.9,8.85 x 10-14 F/cm, and n 1.5 x 1010cm3 . Gate material is n+ poly-silicon . Total negative oxide charge of 5x 1011q C/cnm2 . Substrate is n-type Si, with doping concentration 1x1016 cm3 Oxide thickness 5 nm . The electron affinity for Si is 4.03eV? a) Draw the band diagram at equilibrium. b) From part (a). What is the substrate (bulk) condition at...
Consider an n-channel Silicon MOS system with a substrate resistivity of 10 0-cm and with a polycrystalline gate. Assume that the polysilicon gate is doped with boron atoms to a density of 1x1019 cm and that the silicon dioxide is 50 nm-thick. The channel is not biased except from the gate (Vc= VB = 0). (i) Accurately sketch the band diagram identifying flatband voltage, surface potential at inversion, depletion width at inversion, and charges at inversion. Tabulate these parameters. (ii)...
3. For an n-channel MOSFET with gate oxide (SiO2) thickness of 30 nm, threshold voltage of 0.7 V, Z = 30 um, and length of the device is 0.9 μm, calculate the drain current for VG-3 V and VD-0.2 V. Assume that the electron channel mobility is 200 cm'/V-sec. What will be the required drain current to drive the MOS in saturation region? How the drain current will change if HfO2 with Ks 25 will be used as a gate...
Section B (total 60 marks for section B) B1 a) An MOS capacitor has a p-type semiconductor substrate doped with an impurity concentration of 1018 cm3. Assume a poly-Si material is used for the gate. Draw a diagram of the capacitor structure showing material types and an energy band diagram it is in thermal equilibrium. (10 marks) b) Given an MOS capacitor with a p-type semiconductor substrate and poly-Si material as gate (in part a), what is the meaning of...
a. Given an MOS structure made of p-type Si( Na 1017 cm, relative permittivity of 11.7) and SiO2 (thickness 200 À, relative permittivity of 3.9).Assume the work functions of the metal and semiconductor are equal. Find φ, wm (maximum depletion width), the threshold voltage, Vr, and the minimum value of MOS capacitance (Cmin). (15 points) VT Cin Wm Vr Cmin b. Describe several approaches to enhance the capacitance of MOS structures. (5 points)
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