Determine the range of values of v, that would allow the circuit below to act as...
Problem#1 Consider the circuit. The circuit parameters are Vpp = 3.3 V, RD = 8 k1, R, = 240 k12, R2 = 60 k22, and Rs = 2 k12. The transistor parameters are Vrn = 0.4 V, k', = 100 MA/V?, W/L = 80, and 1= 0.02 V!. (a) Determine the quiescent values Ipo and Vpsp. Ans: 0.27 mA; 1.14 V. (b) Find the small-signal parameters g.m and ro. Ans: 2.078 mA/V; 185 62. (e) Determine the small-signal voltage gain...
Q3) Design the circuit of that is, determine the values of RD and RS so that the transistor operates at ID = 0.4 mA and Vp=+0.5 V. The NMOS transistor has V = 0.7 V, H, Cox= 100 A/V2, L = 1 pm, and W = 32 m. Neglect the channel-length modulation effect (i.e., assume that I = 0). Vpp = +2.5 V Z RO V--25 V
(a) The figure below shows the small-signal equivalent circuit of a voltage amplifier. The open-circuit output of the supply v10 V (i) Determine the resistances if the regulation should be less than 5 % when 1 W is being delivered to a resistive load connected across vo in the mid frequency range. If the low frequency 3dB point is at 1 kHz and the high frequency 3 dB point is 100 kHz what are the capacitance values. Assume the circuit...
For the given circuit, determine the values of V, and I where A = 6020° V. Please report your answer so the magnitude is positive and all angles are in the range of negative 180 degrees to positive 180 degrees. j5 Ω + 12 + Vi j102 j10 2 A 1020° A The value of 12 = + A and V1 1. V.
Design an amplifier that meets the following conditions. Determine the R3 value to get the maximum voltage gain A. Find the W / L of VG, VS, VD and MOS. B. Find RD, R1, R2, R3. C. If the input frequency is 20 Hz. obtain the conditions and values that determine the Cl and C2 values V20=2.4IV].Pc =2.5m),4 = = 4\uA] 4C-100.A/,,0.SV), A= 0,e = 0,7 V ON - 51v/v)},R = 50[Q] R, >> 1/g.m Vi C=F] Design an amplifier...
Question 1 (15 points) Consider the circuit below with vi as the input and v, as the output. Let the component values be R = 1001 and C = 1000F. C + v;(t) vo(t) Answer the following questions using the formulas from the lecture slides: 1. What is the type of this filter? (1 points) 2. Write down the expression for the transfer function H(w) of the circuit. (4 points) 3. Write down the expression for frequency response |H(w) of...
2. For the circuit below, find the values of W and Ro to operate the MOSFET at lo 0.2 mA and Vo 0.6 V The MOSFET has ν.-0.4V, ka-400 , 1 V2' 0.4 μη. +1.8 V RD 4.7 ΜΩ
Given the circuit below with the following parameters: - M1: Vt,n = 0.48 V, Un Cox = 90 UA/V2, W/L = 10 um/4 um, VdD+Vad 1 = 0.01 [1/V] - Supply voltage: Vpp = 3.3 V, vad = 10 mV > R a. Find the value of resistor R so that the bias current is 10uA. (Hint: Channel length modulation should be considered.) Ipi M1 Use the resistor value in (a) for the following calculations: b. What configuration (connection) M1...
1. (3.35) For the transistor in the circuit in the circuit below, the parameters are Vin=0.5 V, kn' = 100 A/V2 and W/L = 30. (a) Determine Vas, lp, and Vps. (b) Sketch the load line and plot the Q-point. Ri= 16 K RD = 1.0K R2 = 7 K Rs -0.4K 0-5V
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...