In which of the following situations should a PNP transistor be conducting normally? |
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In which of the following situations should a PNP transistor be conducting normally? A. 8...
Please answer and show all your work. Thank you! 6- A silicon pnp transistor has impurity concentrations of 5 x 1018 cm3, 7 x 1016 cm-3, and 2 × 1016 cm-3 in the emitter, base and collector, respectively. The base width is 1.0 ?m, and the device cross-sectional area is 0.2 mm2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate the neutral base width and the minority...
HELP with finding 8 and 9 2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
A Si pnp transistor has the following properties at room temperature: 4. .ni-1.5x1010 cm3 tn-tp 0.1 us . DnDp-10 cm2/s NE-5x1018 cm3 Ng-N-1016 cm3 Emitter width: wF4 μm Distance from base/emitter interface to base/collector interface: W-1 um Cross-sectional area: 10 cm2 α 0.9948 (5 points) (5 points) a. Calculate the neutral base width (Ws) for Vco 0 and VEB 0.6 V. b. Calculate β, le, la, and lc for Vc8-0 and Vea-0.6 V A Si pnp transistor has the following...
1) Two pnp BJTs are identical except that the emitter and collector region doping are interchanged, as illustrated below. 1017 1017 101s 10 1014 04 E B C ??? Transistor A Transistor B a) Which transistor is expected to have the greater emitter efficiency? Explain. b) Which transistor will exhibit the greater sensitivity to base width modulation under active mode biasing? Explain. If limited by avalanche breakdown of the C-B junction, which transistor will exhibit the larger VcB0? Explairn. c)
Flag Which of the following is true for a PNP BJT operating in the forward-active region? Select one: O a. None of these b. The collector current consists primarily of holes injected from the collector into the O base O c. The base current consists primarily of holes injected from the emitter into the base O d. Some base current flows to replace holes which are lost as electrons diffusing across the base recombine O e. The emitter current consists...
A. As an electronic device, what is the function or purpose of a bipolar junction transistor when it is utilized in an analog circuit? B. Make a sketch of a typical volume element of a silicon pnp transistor connected in active larger than the base current. In your sketch, show the path of carriers (both holes and electrons) as they proceed from the emitter to the collector. Identify the paths of all 3 types of base current and explain what...
question 3 and 4 Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the forward active mode, and B = 100 and VBE = 0.7V, calculate Base current 1B Collector current Ic (iii) Emitter current le (iv) Collector to emitter voltage Vce and (v) Voltage across the 2009 resistor v 3 80022 10 kV W VCE VBE مت + + 1 2001} 1 1
QUESTION 1 For normal operation of an npn transistor, the base must be O a. disconnected O b. negative with respect to the emitter O C positive with respect to the emitter O d. positive with respect to the collector QUESTION 2 The bias condition for a transistor to be used as a linear amplifier is called O a. forward-reverse b. forward-forward C. reverse-reverse d. collector bias