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Q5. (a) What is specific contact resistance? What are the different techniques [5 Marks] that you...
Detailed solutions needed, thank you! 5- Determine the equilibrium electron and hole concentrations inside a uniformly...
Detailed solutions needed, thank you!
5- Determine the equilibrium electron and hole concentrations inside a uniformly doped under the following conditions: (a) Room temperature, NA << ND, ND = 10°/cm ; (b) Room temperature, NA 1016/cm3, ND « NA; (c) Room temperature, NA = 9 x 1015/cm3, ND = 1016/cm3; (d) T = 450 K, NA = 0, ND = 1014/cm3; (e) T = 650 K, NA = 0, ND = 1014/cm3. sample of Si
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
Thanks.... Question 2 (5 marks) a) State the ideal-diode equation. b) Forward-bias-voltage of V, 0.625 V...
Thanks....
Question 2 (5 marks) a) State the ideal-diode equation. b) Forward-bias-voltage of V, 0.625 V is applied to a silicon p-n junction with its cross 10 cm2. At T 300 K, it has the following parameters: n, 1.5 x 100 cm3 N, 5 x 1016 cm3 Na-1 x 106 cm D, 25 cm'ls D, 10 cm/s Tao 5 x 10s tpo 1 x 10s sectional area, A Calculate: i) the minority electron diffusion current at the space charge edge,...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minor...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady st...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady state excess carriers at on the left side of the bar (x-o) creating a quasi-Fermi level separation of (E-Fp)-0.42 eV. The carriers diffuse to the right and decay exponentially. Electron and hole lifetimes are both 5 μs Also, it is room temperature, D,-18 cm2/s, Dn-36 cm3/s, and n#1.5x1010 /cm? what is the electron . concentration and current density (A/cm2) at x 50...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
A silicon pn junction at T = 300 K has the following parameters: Na-5 1016 cm-?,...
A silicon pn junction at T = 300 K has the following parameters: Na-5 1016 cm-?, N,-1 1016 cm-3, D.-25 cm3/s, D.-10 cm2/s, ?,0-5 x 10-7 s, and To 1 X 10-7 s. The cross-sectional area is A 10-3 cm2 and the forward- bias voltage is V,-0.625 V. Calculate the (a) minority electron diffusion cur- rent at the space charge edge, (b) minority hole diffusion current at the space charge edge, and (c) total current in the pn junction diode.
5 X 10% cm/s. 2. You are given the following information about a semiconductor sample at 27 degre...
find the fourier transform of the half
5 X 10% cm/s. 2. You are given the following information about a semiconductor sample at 27 degrees Celsius: N 2e15 cm m*p Sm, N 1.6e15 cm3 m-0.01m, N-2.51x10" (m*, /m,)12 N,-2.51x109 (mp/ ,2000 cm/Vsecond Cross sectional area 0.01 cm2 by 1 cm long E-0.5 eV H,-500 cm/Vsecond a) Find the intrinsic, electron and hole concentration (Assume total ionization) b) Find the Fermi energy position relative to the intrinsic Fermi energy. c)The resistance...
It is desired to make metal / semiconductor rectifier contact with ND = 2x1017cm-3 doped silicon, which of the metals whose work functions are given below you can use. Explain by making the necessary calculations. Find the barrier heights on the Metal and
1-It is desired to make metal / semiconductor rectifier contact with \(\mathrm{N}_{\mathrm{D}}=2 \times 10^{17} \mathrm{~cm}^{-3}\) doped silicon, which of the metals whose work functions are given below you can use. Explain by making the necessary calculations. Find the barrier heights on the Metal and Semiconductor side. Find the depletion width. Electron affinity of Si \(\chi=4 \mathrm{eV},\) Work function of metals \(\emptyset(\mathrm{Al})=4.3 \mathrm{eV}, \emptyset(\mathrm{Mg})=3.7 \mathrm{eV}\), \(\Phi(\mathrm{Pt})=5.65 \mathrm{eV}, \emptyset(\mathrm{Zn})=4.47 \mathrm{eV}, \emptyset(\mathrm{Au})=5.1 \mathrm{eV}, \mathrm{n}_{1}(\mathrm{Si})=1.5 \times 10^{10}\)
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of The total current density Conductivity - Problem 2 Consider Germanium sample with the following characteristics the electron and hole mobility for Ge is 0.39 and 0.19 m2N.s The electron and hole effectives masses are 0.56me and 0.4 me The energy gap is 0.67 eV at T-27°C 1) 2) Find the intrinsic carrier concentration for Ge What is the resistivity of the Ge sample...
Detailed solutions needed, thank you!
5- Determine the equilibrium electron and hole concentrations inside a uniformly doped under the following conditions: (a) Room temperature, NA << ND, ND = 10°/cm ; (b) Room temperature, NA 1016/cm3, ND « NA; (c) Room temperature, NA = 9 x 1015/cm3, ND = 1016/cm3; (d) T = 450 K, NA = 0, ND = 1014/cm3; (e) T = 650 K, NA = 0, ND = 1014/cm3. sample of Si
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
Thanks....
Question 2 (5 marks) a) State the ideal-diode equation. b) Forward-bias-voltage of V, 0.625 V is applied to a silicon p-n junction with its cross 10 cm2. At T 300 K, it has the following parameters: n, 1.5 x 100 cm3 N, 5 x 1016 cm3 Na-1 x 106 cm D, 25 cm'ls D, 10 cm/s Tao 5 x 10s tpo 1 x 10s sectional area, A Calculate: i) the minority electron diffusion current at the space charge edge,...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
6. A long p-type Si bar, NA-5x1016 cm3, is optically excited and creates a low level of steady state excess carriers at on the left side of the bar (x-o) creating a quasi-Fermi level separation of (E-Fp)-0.42 eV. The carriers diffuse to the right and decay exponentially. Electron and hole lifetimes are both 5 μs Also, it is room temperature, D,-18 cm2/s, Dn-36 cm3/s, and n#1.5x1010 /cm? what is the electron . concentration and current density (A/cm2) at x 50...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
A silicon pn junction at T = 300 K has the following parameters: Na-5 1016 cm-?, N,-1 1016 cm-3, D.-25 cm3/s, D.-10 cm2/s, ?,0-5 x 10-7 s, and To 1 X 10-7 s. The cross-sectional area is A 10-3 cm2 and the forward- bias voltage is V,-0.625 V. Calculate the (a) minority electron diffusion cur- rent at the space charge edge, (b) minority hole diffusion current at the space charge edge, and (c) total current in the pn junction diode.
find the fourier transform of the half
5 X 10% cm/s. 2. You are given the following information about a semiconductor sample at 27 degrees Celsius: N 2e15 cm m*p Sm, N 1.6e15 cm3 m-0.01m, N-2.51x10" (m*, /m,)12 N,-2.51x109 (mp/ ,2000 cm/Vsecond Cross sectional area 0.01 cm2 by 1 cm long E-0.5 eV H,-500 cm/Vsecond a) Find the intrinsic, electron and hole concentration (Assume total ionization) b) Find the Fermi energy position relative to the intrinsic Fermi energy. c)The resistance...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of The total current density Conductivity - Problem 2 Consider Germanium sample with the following characteristics the electron and hole mobility for Ge is 0.39 and 0.19 m2N.s The electron and hole effectives masses are 0.56me and 0.4 me The energy gap is 0.67 eV at T-27°C 1) 2) Find the intrinsic carrier concentration for Ge What is the resistivity of the Ge sample...
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