3.12 The following parameters are given for an nMOS process.
• tox =500Å
• substrate doping NA = 1·1016 cm-3
• polysilicon gate doping ND = 1·1020cm-3
• oxide-interface fixed-charge density Nox = 2·1010cm-3
(a) Calculate VT for an unimplanted transistor.
(b) What type and what concentration of impurities must be implanted to achieve VT = +2V and VT= -2V?
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