3.9 A pMOS transistor was fabricated on a n-type substrate with a bulk doping density of ND= 1016cm-3, gate doping density(n-type poly) of ND= 1020cm-3, Qox/q = 4·1010cm-2 and gate oxide thickness of tox = 0.1 μm. Calculate the threshold voltage at room temperature for VSB= 0. Use εsi=11.7ε0.
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