3.2 Consider a diffusion area which has the dimensions 10μmx5μm and the abrupt junction depth is 0.5μm. Its n-type impurity doping level is ND= 1·1020cm-3 and the surrounding p-type substrate doping level is NA = 1·1016 cm-3. Determine the capacitance when the diffusion area is biased at 5V and the substrate is biased at 0V. In this problem, assume that there is no channel-stop implant.
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