3.17 An nMOS transistor is fabricated with the following physical parameters:
•ND=1020cm-3
• NA(substrate) = 1016 cm-3
• N+A(chanstop) = 1019 cm-3
•W =10 μm
• Y = 5 μm
• L = 1.5 μm
• LD = 0.25 μm
• Xj = 0.4 μm
(a) Determine the drain diffusion capacitance for VDB= 5 V and 2.5V.
(b) Calculate the overlap capacitance between the gate and drain for an oxide thickness of tox =200 Å.
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