3.10 A depletion-type nMOS transistor has the following device parameters:
• μn = 500 cm2/V·s
• tox = 345Å
•|2ϕF|= 0.84 V
•W/L= 1.0
Some laboratory measurement results of terminal behavior of this device are shown in the table below. Using the data in the table, find the missing value of the gate voltage in the last entry. Show all of the details of your calculation.
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