3.1 Consider a MOS system with the following parameters:
•tox =200Å
•ϕGC=-0.85 V
•NA=2·1015cm-3
•Qox = q 2·1011 C/cm2
(a) Dtetermine the threshold voltage VT0 under zero bias at room temperature (T=300K). Note that ε = 3.97ε0 and εsi= 11.7ε0
(b) Determine the type (p-type or n-type) and amount of channel implant (N1/cm2) required to change the threshold voltage to 0.8V.
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