3.7 A set of I-V characteristics of an nMOS transistor at room temperature are shown in be...

3.7 A set of I-V characteristics of an nMOS transistor at room temperature are shown in below for different biasing conditions. Figure P3.7 shows the measurement setup. Using the data, find

(a) The threshold voltage V_T0,

(b) electron mobility μ_n,

(c) body effect coefficient gamma(γ).

Some of the parameters are known to be:

• W/L=1.0

•t_ox = 345 Å

•|2ϕ_F| = 0.64 V

Figure P3.7